HiPerFETTM
Power MOSFETs
Q-Class
IXFH 26N60Q V
IXFT 26N60Q I
= 600 V
26 A
= 0.25 Ω
DSS
=
D25
R
DS(on)
t ≤ 250 ns
rr
N-ChannelEnhancementMode
AvalancheRated, Highdv/dt, LowQ
g
Symbol
TestConditions
Maximum Ratings
TO-247 AD (IXFH)
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
600
600
V
V
(TAB)
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
26
104
26
A
A
A
TO-268 (D3) ( IXFT)
EAR
EAS
TC = 25°C
TC = 25°C
45
1.5
mJ
J
G
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
,
5
V/ns
(TAB)
S
PD
TC = 25°C
360
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
G = Gate
S = Source
D = Drain
TAB = Drain
TL
1.6 mm (0.063 in) from case for 10 s
300
°C
Features
Md
Mountingtorque
TO-247
1.13/10 Nm/lb.in.
l
Low gate charge
Weight
TO-247
TO-268
6
4
g
g
l
International standard packages
Epoxy meet UL 94 V-0, flammability
classification
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Avalanche energy and current rated
Fast intrinsic Rectifier
l
l
l
l
l
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Advantages
VDSS
VGS = 0 V, ID = 250µA
600
2.5
V
V
VGS(th)
VDS = VGS, ID = 4 mA
4.5
l
Easy to mount
l
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±200 nA
25 µA
Space savings
l
High power density
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
1
mA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
0.25
Ω
98635D (6/02)
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