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IXFT26N50Q

型号：

IXFT26N50Q

描述：

HiPerFET功率MOSFET[ HiPerFET Power MOSFETs ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

135 K

下载PDF手册
HiPerFETTM  
VDSS  
ID25  
RDS(on)  
Power MOSFETs  
IXFH/IXFT 24N50Q  
IXFH/IXFT 26N50Q  
500 V  
500 V  
24 A  
26 A  
0.23 Ω  
0.20 Ω  
Q-Class  
t ≤ 250 ns  
rr  
N-ChannelEnhancementMode  
AvalancheRated, LowQg,Highdv/dt  
Symbol  
TestConditions  
Maximum Ratings  
TO-247AD(IXFH)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
500  
500  
V
V
TJ = 25°C to 150°C; RGS = 1 MΩ  
VGS  
Continuous  
Transient  
±20  
±30  
V
V
(TAB)  
VGSM  
ID25  
IDM  
IAR  
TC = 25°C  
24N50  
24  
26  
96  
104  
24  
26  
A
A
A
A
A
A
26N50  
24N50  
26N50  
24N50  
26N50  
TC = 25°C, Note 1  
TC = 25°C  
TO-268 (D3) (IXFT) Case Style  
EAR  
TC = 25°C  
TC = 25°C  
30  
1.5  
5
mJ  
J
G
(TAB)  
EAS  
S
dv/dt  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
,
V/ns  
TJ ≤ 150°C, RG = 2 Ω  
G
S
=
Gate,D  
Source,TAB  
=
Drain,  
Drain  
PD  
TC = 25°C  
300  
W
=
=
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Features  
TL  
1.6 mm (0.063 in) from case for 10 s  
Mountingtorque  
300  
°C  
l IXYS advanced low Qg process  
l Internationalstandardpackages  
l Low RDS (on)  
Md  
1.13/10  
Nm/lb.in.  
Weight  
TO-247  
TO-268  
6
4
g
g
l UnclampedInductiveSwitching(UIS)  
rated  
l Fast switching  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min.  
typ.  
max.  
l Molding epoxies meet UL 94 V-0  
flammability classification  
VDSS  
VGS = 0 V, ID = 250 µA  
500  
V
VGS(th)  
VDS = VGS, ID = 4 mA  
2.5  
4.5  
V
Advantages  
l
IGSS  
VGS = ±20 VDC, VDS = 0  
±100  
nA  
Easy to mount  
l
Space savings  
l
IDSS  
VDS = VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
25  
1
µA  
mA  
High power density  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
Note 2  
24N50Q  
26N50Q  
0.23  
0.20  
Ω
Ω
© 2001 IXYS All rights reserved  
98512G (5/01)  
IXFH 24N50Q IXFT 24N50Q  
IXFH 26N50Q IXFT 26N50Q  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-247 AD Outline  
VDS = 10 V; ID = 0.5 ID25, Note 2  
14  
24  
S
Ciss  
Coss  
Crss  
3900  
500  
pF  
pF  
pF  
1
2
3
Terminals:  
1 - Gate  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
2 - Drain  
3 - Source  
Tab - Drain  
130  
td(on)  
tr  
td(off)  
tf  
28  
30  
55  
16  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
RG = 2 Ω (External),  
Dim.  
A
Millimeter  
Inches  
Min. Max.  
Min.  
Max.  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Qg(on)  
Qgs  
95  
27  
40  
nC  
nC  
nC  
A
1
A
2
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
b
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
b
Qgd  
1
b
2
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
RthJC  
RthCK  
0.42  
K/W  
K/W  
20.80 21.46  
15.75 16.26  
(TO-247)  
0.25  
e
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
.780 .800  
.177  
L
L1  
P
3.55  
5.89  
3.65 .140 .144  
6.40 0.232 0.252  
Source-DrainDiode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Q
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Symbol  
IS  
TestConditions  
VGS = 0 V  
24N50Q  
26N50Q  
24  
26  
A
A
TO-268 Outline  
ISM  
Repetitive; Note1  
IF = IS, VGS = 0 V,  
24N50Q  
26N50Q  
96  
104  
A
A
VSD  
1.3  
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
trr  
QRM  
IRM  
250  
ns  
µC  
A
IF = IS, -di/dt = 100 A/µs, VR = 100 V  
0.85  
8
Note 1. Pulse width limited by T  
2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
JM  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min. Max.  
A
A1  
A2  
4.9  
2.7  
.02  
5.1  
2.9  
.25  
.193 .201  
.106 .114  
.001 .010  
Min Recommended Footprint  
b
b2  
C
1.15  
1.9  
.4  
1.45  
2.1  
.65  
.045 .057  
.75  
.83  
.016 .026  
D
E
E1  
13.80 14.00  
15.85 16.05  
.543 .551  
.624 .632  
.524 .535  
13.3  
13.6  
e
H
L
5.45 BSC  
18.70 19.10  
.215 BSC  
.736 .752  
.094 .106  
2.40  
2.70  
L1  
1.20  
1.40  
.047 .055  
L2  
L3  
L4  
1.00  
0.25 BSC  
3.80 4.10  
1.15  
.039 .045  
.010 BSC  
.150 .161  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
IXFH 24N50Q IXFT 24N50Q  
IXFH 26N50Q IXFT 26N50Q  
60  
50  
40  
30  
20  
10  
0
50  
40  
30  
20  
10  
0
VGS=10V  
TJ = 25OC  
VGS=10V  
TJ = 125OC  
9V  
8V  
7V  
9V  
8V  
7V  
6V  
5V  
6V  
5V  
0
4
8
12  
16  
20  
0
4
8
12  
16  
20  
VDS - Volts  
VDS - Volts  
°C  
2.4  
2.0  
1.6  
1.2  
0.8  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
VGS = 10V  
VGS = 10V  
ID = 26A  
o
TJ = 125 C  
ID = 13A  
o
TJ = 25 C  
25  
50  
75  
100  
125  
150  
0
10  
20  
30  
40  
50  
60  
TJ - Degrees C  
ID - Amperes  
n  
30  
25  
20  
15  
10  
5
50  
40  
30  
20  
10  
0
IXF_26N50Q  
IXF_24N50Q  
TJ = 125oC  
TJ = 25oC  
0
-50 -25  
0
25 50 75 100 125 150  
0
2
4
6
8
TC - Degrees C  
VGS - Volts  
Fig.5 Drain Current vs. Case Temperature  
Fig.6 Drain Current vs Gate Source Vlotage  
© 2001 IXYS All rights reserved  
IXFH 24N50Q IXFT 24N50Q  
IXFH 26N50Q IXFT 26N50Q  
10000  
1000  
100  
12  
10  
8
f = 1MHz  
VDS = 250 V  
ID = 13 A  
Ciss  
IG = 10 mA  
Coss  
6
4
Crss  
2
0
0
5
10 15 20 25 30 35 40  
0
20  
40  
60  
80  
100  
120  
VDS - Volts  
Gate Charge - nC  
Fig.7GateChargeCharacteristicCurve  
Fig.8 CapacitanceCurves  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
TJ = 125OC  
TJ = 25OC  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
VSD - Volts  
Fig.9DrainCurrentvsDraintoSourceVoltage  
1.00  
D=0.5  
0.10  
0.01  
0.00  
D=0.2  
D=0.1  
D=0.05  
D=0.02  
D=0.01  
Single Pulse  
10-5  
10-4  
10-3  
10-2  
Pulse Width - Seconds  
10-1  
100  
101  
Fig.10TransientThermalImpedance  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
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