QPF4005
37 –ꢀ40.5ꢀGHz GaN Dual Channel Front End Module
Absolute Maximum Ratings
Parameter
Value
28 V
Drain Voltage (TXVD, RXVD)
Drain Current (TXID3+TXID12)
Drain Current (RXID)
800 mA
60 mA
Gate Voltage (RXVG, TXVG3, TXVG12)
Gate Current (RXIG, TXIG3, TXIG12)
Switch Control Voltage (TXSW, RXSW)
Switch Control Current
0 to −5 V
20 mA
0 to 28 V
20 mA
RF Input Power (All RF ports, 85 °C)
Channel Temperature, TCH
30 dBm
225 °C
Mounting Temperature (30 seconds)
Storage Temperature
260 °C
−55 to 150 °C
Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and
functional operation of the device at these conditions is not implied. Extended application of Absolute Maximum Rating conditions to
the device may reduce device reliability.
Thermal and Reliability Information
Parameter
Values
Units
Conditions
Thermal Resistance (θJC) (1,2,3), Quiescent, TX
14.9
°C/W
TX on, RX off, CW, VD = +20ꢀV, IDQ = 159ꢀmA,
TBASE = 85ꢀ°C
RF off, PDISS =3.18ꢀW
Channel Temperature (TCH), Quiescent, TX
132.4
°C
°C/W
°C
Thermal Resistance (θJC) (1,2,3), Under Drive, TX 10.7
TX on, RX off, CW, VD = +20ꢀV, TBASE = 85ꢀ°C,
Freq = 39ꢀGHz, PIN = 10ꢀdBm, POUT = 25ꢀdBm,
ID_DRIVE = 0.25ꢀA, PDISS = 4.69ꢀW
Channel Temperature (TCH), Under Drive, TX
Thermal Resistance (θJC) (1,2,3), Quiescent, RX
Channel Temperature (TCH), Quiescent, RX
135.2
67.0
°C/W
°C
RX on, TX off, CW, VD = +20ꢀV, IDQ = 15ꢀmA
TBASE = 85ꢀ°C
RF off, PDISS = 0.3ꢀW
105.1
Notes:
1. Thermal resistance is referenced to package backside
2. Base or ambient temperature is 85 °C
3. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Data Sheet Rev. I,
Feb 2021
|
Subject to change without notice
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