HiPerFETTM
Power MOSFETs
Single Die MOSFET
VDSS
ID25
= 600 V
= 60 A
IXFN 60N60
RDS(on) = 75 mW
D
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
G
Preliminary data
S
S
Symbol
TestConditions
MaximumRatings
miniBLOC, SOT-227 B (IXFN)
E153432
VDSS
VDGR
TJ = 25°C to 150°C
600
600
V
V
S
TJ = 25°C to 150°C; RGS = 1 MW
G
VGS
Continuous
Transient
±20
±30
V
V
VGSM
S
ID25
TC= 25°C, Chip capability
60
A
D
IDM
IAR
TC= 25°C, pulse width limited by TJM
TC= 25°C
240
60
A
A
G = Gate
S = Source
D = Drain
TAB = Drain
EAR
TC= 25°C
TC= 25°C
64
4
mJ
J
EAS
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
dv/dt IS
£ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
,
5
V/ns
Features
PD
TC = 25°C
700
W
• Internationalstandardpackages
• miniBLOC, withAluminiumnitride
isolation
• Low RDS (on) HDMOSTM process
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
-55 ... +150
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
VISOL
Md
50/60 Hz, RMS
IISOL £ 1 mA
t = 1 min
t = 1 s
2500
3000
V~
V~
Mountingtorque
Terminalconnectiontorque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
• Low package inductance
• Fast intrinsic Rectifier
Weight
30
g
Applications
• DC-DC converters
• Battery chargers
• Switched-modeandresonant-mode
powersupplies
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS = 0 V, ID = 3 mA
VDS = VGS, ID = 8 mA
600
2
V
V
• DC choppers
VGH(th)
4.5
• Temperatureandlightingcontrols
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±200 nA
100 mA
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
2
mA
Advantages
• Easy to mount
• Space savings
• High power density
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t £ 300 ms,
duty cycle d £ 2 %
75 mW
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98593B(7/00)
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