8N10P
8 Amps,100 Volts N-CHANNEL Power MOSFET
FEATURE
8A,100V,RDS(ON)MAX=23mΩVGS=10V/8A
Low gate charge
Low Ciss
Fast switching
100% avalanche tested
Improved dv/dt capability
APPLICATION
High Frequency Piont-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
Networking DC-DC Power System
LCD/LED back light
SOP8L PIN CONFIGURATION
GENERAL DESCRIPTION
The 8N10P is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and
gate charge for most of the synchronous buck converter applications.
The 8N10P meet the RoHS and Green product requirement,100% EAS guaranteed with full function reliability approved.
Absolute Maximum Ratings(TC=25℃,unless otherwise noted)
Parameter
Symbol
UNIT
8N10P
Drain-Source Voltage
VDSS
VGSS
ID
100
V
Gate-Source Voltage
±20
Continuous Drain Current
8
A
Pulsed Drain Current(Note1)
Single Pulse Avalanche Energy (Note 2)
Avalanche Current
IDM
32
EAS
11
15
mJ
A
IAS
Reverse Diode dV/dt (Note 3)
Operating Junction and Storage Temperature Range
Channel Temperature
dv/dt
TJ,TSTG
TCH
5.5
V/ns
℃
-55 to +150
150
℃
Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds
TL
260
℃
Thermal Characteristics
Parameter
Symbol
Rth(ch-c)
Rth(ch-a)
PD
MAX
16
Units
℃/W
℃/W
W
Thermal resistance , Channel to Case
Thermal resistance , Channel to Ambient
59
Maximum Power Dissipation
TC=25℃
3.1
