PXFC192207FH
Thermally-Enhanced High Power RF LDMOS FET
220 W, 28 V, 1805 – 1990 MHz
Description
The PXFC192207FH is a 220-watt LDMOS FET intended for
use in multi-standard cellular power amplifier applications in the
1805 to 1990 MHz frequency band. Features include input and
output matching, high gain and thermally-enhanced package with
earless flanges. Manufactured with Wolfspeed's advanced LDMOS
process, this device provides excellent thermal performance and
superior reliability.
PXFC192207FH
Package H-37288G-4/2
Features
Two-carrier WCDMA Drive-up
VDD = 28 V,IDQ = 1600 mA,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
•
•
Broadband input and output matching
Typical Pulsed CW performance, 1990 MHz, 28 V,
16 µs pulse width, 10 % duty cycle, class AB
- Output power at P
- Efficiency = 55%
- Gain = 20 dB
= 220 W
1dB
30
25
20
15
10
5
60
50
40
30
20
10
0
1930 MHz
1960 MHz
1990 MHz
•
Typical single-carrier WCDMA performance, 1990
MHz, 28 V, 9.9 dB PAR @ 0.01% CCDR
- Output power = 50 W
- Efficiency = 29%
- Gain = 20 dB
Gain
- ACPR = –34 dBc @ 5 MHz
•
•
Capable of handling 10:1 VSWR @28 V, 220 W
(CW) output power
Efficiency
40
Integrated ESD protection : Human Body Model,
Class 1C (per JESD22-A114)
0
c192207fh_g1
30
35
45
50
55
•
•
Low thermal resistance
Output Power (dBm)
Pb-free and RoHS compliant
RF Characteristics
Two-carrier WCDMA Specifications (tested in Wolfspeed production test fixture)
= 28 V, I = 1600 mA, P = 50 W avg, ƒ = 1980 MHz, ƒ = 1990 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
V
DD
DQ
OUT
1
2
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Linear Gain
Symbol
Min
19
Typ
20.5
32
Max
—
Unit
dB
G
ps
Drain Efficiency
hD
29
—
%
Intermodulation Distortion
IMD
—
–32.5
–29
dBc
All published data at T
= 25°C unless otherwise indicated
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Rev. 05, 2018-06-25
4600 Silicon Drive
|
Durham, NC 27703
|
www.wolfspeed.com
