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SZNUD3112DMT1G

型号：

SZNUD3112DMT1G

品牌：

ONSEMI[ ONSEMI ]

页数：

7 页

PDF大小：

147 K

下载PDF手册
NUD3112  
Integrated Relay,  
Inductive Load Driver  
This device is used to switch inductive loads such as relays,  
solenoids incandescent lamps, and small DC motors without the need  
of a free−wheeling diode. The device integrates all necessary items  
such as the MOSFET switch, ESD protection, and Zener clamps. It  
accepts logic level inputs thus allowing it to be driven by a large  
variety of devices including logic gates, inverters, and  
microcontrollers.  
www.onsemi.com  
MARKING DIAGRAMS  
3
SOT−23  
CASE 318  
STYLE 21  
JW5 MG  
Features  
1
G
2
• Provides a Robust Driver Interface Between D.C. Relay Coil and  
Sensitive Logic Circuits  
JW5 = Specific Device Code  
• Optimized to Switch Relays of 12 V Rail  
M
= Date Code  
= Pb−Free Package  
G
• Capable of Driving Relay Coils Rated up to 6.0 W at 12 V  
• Internal Zener Eliminates the Need of Free−Wheeling Diode  
(Note: Microdot may be in either location)  
• Internal Zener Clamp Routes Induced Current to Ground for Quieter  
SC−74  
JW5 MG  
CASE 318F  
G
Systems Operation  
6
• Low V  
Reduces System Current Drain  
DS(ON)  
STYLE 7  
1
• SZ Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AEC−Q101 Qualified and  
PPAP Capable  
JW5 = Specific Device Code  
M
= Date Code  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
• These are Pb−Free Devices  
Typical Applications  
• Telecom: Line Cards, Modems, Answering Machines, FAX  
• Computers and Office: Photocopiers, Printers, Desktop Computers  
• Consumer: TVs and VCRs, Stereo Receivers, CD Players, Cassette  
Recorders  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
NUD3112LT1G  
SOT−23  
(Pb−Free)  
3000 / Tape &  
Reel  
• Industrial: Small Appliances, Security Systems, Automated Test  
Equipment, Garage Door Openers  
SZNUD3112LT1G  
SOT−23  
(Pb−Free)  
3000 / Tape &  
Reel  
NUD3112DMT1G  
SC−74  
(Pb−Free)  
3000 / Tape &  
Reel  
SZNUD3112DMT1G  
SC−74  
(Pb−Free)  
3000 / Tape &  
Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
INTERNAL CIRCUIT DIAGRAMS  
Drain (3)  
Drain (6)  
Drain (3)  
1.0 k  
Gate (1)  
Gate (2)  
Gate (5)  
1.0 k  
1.0 k  
300 k  
300 k  
300 k  
Source (2)  
Source (1)  
Source (4)  
CASE 318  
CASE 318F  
© Semiconductor Components Industries, LLC, 2002  
1
Publication Order Number:  
October, 2016 − Rev. 11  
NUD3112/D  
NUD3112  
MAXIMUM RATINGS (T = 25°C unless otherwise specified)  
J
Symbol  
Rating  
Value  
Unit  
V
Drain to Source Voltage – Continuous  
Gate to Source Voltage – Continuous  
Drain Current – Continuous  
14  
6
V
V
DSS  
dc  
dc  
V
GS  
I
D
500  
mA  
mJ  
°C  
E
50  
Single Pulse Drain−to−Source Avalanche Energy (TJinitial = 25°C)  
Junction Temperature  
z
150  
TJ  
T
Operating Ambient Temperature  
−40 to 85  
−65 to +150  
°C  
A
T
stg  
Storage Temperature Range  
°C  
P
Total Power Dissipation (Note 1)  
Derating Above 25°C  
SOT−23  
SC−74  
225  
1.8  
mW  
mW/°C  
D
P
D
Total Power Dissipation (Note 1)  
Derating Above 25°C  
380  
3.0  
mW  
mW/°C  
R
Thermal Resistance Junction−to−Ambient (Note 1)  
SOT−23  
SC−74  
556  
329  
°C/W  
q
JA  
ESD  
Human Body Model (HBM) According to EIA/JESD22/A114  
2000  
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
1. Mounted onto minimum pad board.  
TYPICAL ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Symbol  
Characteristic  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
V
Drain to Source Sustaining Voltage (Internally Clamped)  
(I = 10 mA)  
14  
16  
17  
8
V
BRDSS  
D
B
I = 1.0 mA  
g
−
−
V
VGSO  
I
Drain to Source Leakage Current  
DSS  
−
−
−
−
20  
40  
mA  
(V = 12 V , V = 0 V, T = 25°C)  
DS  
GS  
A
(V = 12 V, V = 0 V, T = 85°C)  
DS  
GS  
A
I
Gate Body Leakage Current  
(V = 3.0 V, V = 0 V)  
GSS  
−
−
−
−
35  
65  
mA  
GS  
DS  
(V = 5.0 V, V = 0 V)  
GS  
DS  
ON CHARACTERISTICS  
V
GS(th)  
Gate Threshold Voltage  
(V = V , I = 1.0 mA)  
0.8  
0.8  
1.2  
−
1.4  
1.4  
V
GS  
DS  
D
(V = V , I = 1.0 mA, T = 85°C)  
GS  
DS  
D
A
R
Drain to Source On−Resistance  
(I = 250 mA, V = 3.0 V)  
DS(on)  
−
−
−
−
−
−
−
−
−
−
1.2  
1.3  
0.9  
1.3  
0.9  
W
D
GS  
(I = 500 mA, V = 3.0 V)  
D
GS  
(I = 500 mA, V = 5.0 V)  
D
GS  
(I = 500 mA, V = 3.0 V, T =85°C)  
D
GS  
A
(I = 500 mA, V = 5.0 V, T =85°C)  
D
GS  
A
I
Output Continuous Current  
(V = 0.25 V, V = 3.0 V)  
DS(on)  
300  
200  
400  
−
−
−
mA  
DS  
GS  
(V = 0.25 V, V = 3.0 V, T = 85°C)  
DS  
GS  
A
g
FS  
Forward Transconductance  
(V = 12.0 V, I = 0.25 A)  
350  
490  
−
mmhos  
OUT  
OUT  
www.onsemi.com  
2
 
NUD3112  
TYPICAL ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Symbol  
Characteristic  
Min  
Typ  
Max  
Unit  
DYNAMIC CHARACTERISTICS  
C
Input Capacitance  
(V = 12 V, V = 0 V, f = 10 kHz)  
−
−
−
23  
30  
7
−
−
−
pF  
pF  
pF  
iss  
DS  
GS  
C
Output Capacitance  
(V = 12 V, V = 0 V, f = 10 kHz)  
oss  
DS  
GS  
C
Transfer Capacitance  
(V = 12.0 V, V = 0 V, f = 10 kHz)  
rss  
DS  
GS  
SWITCHING CHARACTERISTICS  
Symbol  
Characteristic  
Min  
Typ  
Max  
Units  
Propagation Delay Times:  
nS  
t
t
High to Low Propagation Delay; Figure 1 (V = 12 V, V = 5.0 V)  
−
−
21  
91  
−
−
PHL  
PLH  
DS  
GS  
Low to High Propagation Delay; Figure 1 (V = 12 V, V = 5.0 V)  
DS  
GS  
Transition Times:  
Fall Time; Figure 1 (V = 12 V, V = 5.0 V)  
nS  
t
−
−
36  
61  
−
−
f
DS  
GS  
t
r
Rise Time; Figure 1 (V = 12 V, V = 5.0 V)  
DS GS  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
V
IH  
V
in  
50%  
0 V  
t
t
PLH  
PHL  
V
OH  
OL  
90%  
V
out  
50%  
10%  
V
t
r
t
f
Figure 1. Switching Waveforms  
www.onsemi.com  
3
 
NUD3112  
TYPICAL PERFORMANCE CURVES (T = 25°C unless otherwise specified)  
J
1
1
V
GS  
= 5.0 V  
V
DS  
= 0.8 V  
V
GS  
= 3.0 V  
0.1  
0.1  
0.01  
V
V
= 2.0 V  
= 1.5 V  
GS  
GS  
0.01  
0.001  
125°C  
0.001  
85°C  
25°C  
V
= 1.0 V  
0.7  
GS  
0.0001  
0.00001  
0.0001  
−40°C  
0.00001  
0.0  
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.8  
125  
125  
0.5 1.0 1.5  
2.0 2.5 3.0 3.5  
4.0 4.5 5.0  
, GATE−TO−SOURCE VOLTAGE (V)  
V
, DRAIN−TO−SOURCE VOLTAGE (V)  
V
DS  
GS  
Figure 2. Output Characteristics  
Figure 3. Transfer Function  
1200  
1000  
800  
600  
400  
200  
0
4500  
4000  
3500  
3000  
2500  
2000  
1500  
1000  
500  
I
= 250 mA  
D
I
D
= 0.5 A  
V
GS  
= 3.0 V  
I
V
= 0.25 A  
= 3.0 V  
D
GS  
I
D
= 0.5 A  
125°C  
85°C  
25°C  
−40°C  
V
GS  
= 5.0 V  
0
0.6  
−50  
−25  
0
25  
50  
75  
100  
0.8  
1
1.2  
1.4  
1.6  
TEMPERATURE (°C)  
V
GS  
, GATE−TO−SOURCE VOLTAGE (V)  
Figure 4. On−Resistance Variation vs.  
Figure 5. RDS(ON) Variation vs. Gate−to−Source  
Temperature  
Voltage  
15.98  
15.96  
21  
20  
19  
18  
17  
16  
15  
14  
13  
I = 10 mA  
Z
15.94  
15.92  
15.90  
15.88  
15.86  
15.84  
15.82  
15.80  
85°C  
25°C  
−40°C  
−50  
−25  
0
25  
50  
75  
100  
0.1  
1
10  
100  
1000  
TEMPERATURE (°C)  
I , ZENER CURRENT (mA)  
Z
Figure 6. Zener Voltage vs. Temperature  
Figure 7. Zener Clamp Voltage vs. Zener  
Current  
www.onsemi.com  
4
NUD3112  
TYPICAL PERFORMANCE CURVES (T = 25°C unless otherwise specified)  
J
45  
40  
35  
30  
1.2  
1.1  
V
GS  
= 3.0 V  
125°C  
85°C  
1
0.9  
V
= 5.0 V  
= 3.0 V  
GS  
25  
20  
15  
10  
5
0.8  
0.7  
0.6  
0.5  
0.4  
25°C  
V
GS  
−40°C  
0
−50  
0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50  
−25  
0
25  
50  
75  
100  
125  
I , DRAIN CURRENT (A)  
D
TEMPERATURE (°C)  
Figure 8. On−Resistance vs. Drain Current and  
Figure 9. Gate Leakage vs. Temperature  
Temperature  
+12V  
Relay  
+5V / 3.3V  
clamp Zener  
clamp Zener  
1.0 k  
Logic  
ESD Zener  
300 k  
ESD Zener  
Figure 10. Typical Application Circuit  
www.onsemi.com  
5
NUD3112  
PACKAGE DIMENSIONS  
SOT−23 (TO−236)  
CASE 318−08  
ISSUE AR  
NOTES:  
D
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.  
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF  
THE BASE MATERIAL.  
0.25  
3
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,  
PROTRUSIONS, OR GATE BURRS.  
T
H
E
E
1
2
MILLIMETERS  
INCHES  
NOM  
0.039  
0.002  
0.017  
0.006  
0.114  
0.051  
0.075  
0.017  
0.021  
0.094  
−−−  
DIM  
A
A1  
b
c
D
E
e
L
MIN  
0.89  
0.01  
0.37  
0.08  
2.80  
1.20  
1.78  
0.30  
0.35  
2.10  
0_  
NOM  
1.00  
0.06  
0.44  
0.14  
2.90  
1.30  
1.90  
0.43  
0.54  
2.40  
−−−  
MAX  
MIN  
MAX  
0.044  
0.004  
0.020  
0.008  
0.120  
0.055  
0.080  
0.022  
0.027  
0.104  
10 _  
L
1.11  
0.10  
0.50  
0.20  
3.04  
1.40  
2.04  
0.55  
0.69  
2.64  
10 _  
0.035  
0.000  
0.015  
0.003  
0.110  
0.047  
0.070  
0.012  
0.014  
0.083  
0 _  
3X  
b
L1  
VIEW C  
e
TOP VIEW  
L1  
A
H
E
T
c
A1  
SEE VIEW C  
STYLE 21:  
PIN 1. GATE  
SIDE VIEW  
END VIEW  
2. SOURCE  
3. DRAIN  
RECOMMENDED  
SOLDERING FOOTPRINT*  
3X  
0.90  
2.90  
3X  
0.95  
PITCH  
0.80  
DIMENSIONS: MILLIMETERS  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
www.onsemi.com  
6
NUD3112  
PACKAGE DIMENSIONS  
SC−74  
CASE 318F−05  
ISSUE N  
D
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH  
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM  
THICKNESS OF BASE MATERIAL.  
6
5
2
4
4. 318F−01, −02, −03, −04 OBSOLETE. NEW STANDARD 318F−05.  
E
H
E
1
3
MILLIMETERS  
INCHES  
NOM  
0.039  
0.002  
0.015  
0.007  
0.118  
0.059  
0.037  
0.016  
0.108  
−
DIM  
A
A1  
b
c
D
E
e
L
MIN  
0.90  
0.01  
0.25  
0.10  
2.90  
1.30  
0.85  
0.20  
2.50  
0°  
NOM  
1.00  
0.06  
0.37  
0.18  
3.00  
1.50  
0.95  
0.40  
2.75  
−
MAX  
MIN  
0.035  
0.001  
0.010  
0.004  
0.114  
0.051  
0.034  
0.008  
0.099  
0°  
MAX  
0.043  
0.004  
0.020  
0.010  
0.122  
0.067  
0.041  
0.024  
0.118  
10°  
1.10  
0.10  
0.50  
0.26  
3.10  
1.70  
1.05  
0.60  
3.00  
10°  
b
e
q
C
A
0.05 (0.002)  
H
E
q
L
A1  
STYLE 7:  
PIN 1. SOURCE 1  
2. GATE 1  
3. DRAIN 2  
4. SOURCE 2  
5. GATE 2  
6. DRAIN 1  
SOLDERING FOOTPRINT*  
2.4  
0.094  
0.95  
0.037  
1.9  
0.074  
0.95  
0.037  
0.7  
0.028  
1.0  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
0.039  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  
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in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  
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expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This  
literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
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USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
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Order Literature: http://www.onsemi.com/orderlit  
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For additional information, please contact your local  
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◊
NUD3112/D  
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