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BZX84C2V4LT1G_16

型号：

BZX84C2V4LT1G_16

品牌：

ONSEMI[ ONSEMI ]

页数：

7 页

PDF大小：

91 K

下载PDF手册
BZX84BxxxLT1G,  
BZX84CxxxLT1G Series,  
SZBZX84BxxxLT1G,  
SZBZX84CxxxLT1G Series  
Zener Voltage Regulators  
www.onsemi.com  
250 mW SOT−23 Surface Mount  
SOT−23  
CASE 318  
STYLE 8  
This series of Zener diodes is offered in the convenient, surface  
mount plastic SOT−23 package. These devices are designed to provide  
voltage regulation with minimum space requirement. They are well  
suited for applications such as cellular phones, hand held portables,  
and high density PC boards.  
3
1
Cathode  
Anode  
Features  
MARKING DIAGRAM  
• 250 mW Rating on FR−4 or FR−5 Board  
• Zener Breakdown Voltage Range − 2.4 V to 75 V  
• Package Designed for Optimal Automated Board Assembly  
• Small Package Size for High Density Applications  
• ESD Rating of Class 3 (> 16 kV) per Human Body Model  
• Tight Tolerance Series Available (See Page 4)  
• SZ Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AEC−Q101 Qualified and  
PPAP Capable  
XXXMG  
G
1
XXX  
M
G
= Device Code  
= Date Code*  
= Pb−Free Package  
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending up-  
on manufacturing location.  
• These Devices are Pb−Free and are RoHS Compliant  
ORDERING INFORMATION  
Mechanical Characteristics  
†
Device  
Package  
Shipping  
CASE: Void-free, transfer-molded, thermosetting plastic case  
FINISH: Corrosion resistant finish, easily Solderable  
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:  
260°C for 10 Seconds  
POLARITY: Cathode indicated by polarity band  
FLAMMABILITY RATING: UL 94 V−0  
BZX84CxxxLT1G  
SOT−23  
3,000 /  
(Pb−Free)  
Tape & Reel  
SZBZX84CxxxLT1G SOT−23  
(Pb−Free)  
3,000 /  
Tape & Reel  
BZX84CxxxLT3G  
SOT−23  
10,000 /  
(Pb−Free)  
Tape & Reel  
SZBZX84CxxxLT3G SOT−23  
(Pb−Free)  
10,000 /  
Tape & Reel  
BZX84BxxxLT1G  
SOT−23  
3,000 /  
(Pb−Free)  
Tape & Reel  
SZBZX84BxxxLT1G SOT−23  
(Pb−Free)  
3,000 /  
Tape & Reel  
BZX84BxxxLT3G  
SOT−23  
10,000 /  
(Pb−Free)  
Tape & Reel  
SZBZX84BxxxLT3G SOT−23  
(Pb−Free)  
10,000 /  
Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
DEVICE MARKING INFORMATION  
See specific marking information in the device marking  
column of the Electrical Characteristics table on page 3 of  
this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
October, 2016 − Rev. 22  
BZX84C2V4LT1/D  
BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G  
Series  
MAXIMUM RATINGS  
Rating  
Symbol  
Max  
Unit  
Total Power Dissipation on FR−5 Board,  
P
D
(Note 1) @ T = 25°C  
250  
2.0  
500  
mW  
mW/°C  
°C/W  
A
Derated above 25°C  
Thermal Resistance, Junction−to−Ambient  
R
q
JA  
Total Power Dissipation on Alumina  
P
D
Substrate, (Note 2) @ T = 25°C  
300  
2.4  
417  
mW  
mW/°C  
°C/W  
A
Derated above 25°C  
Thermal Resistance, Junction−to−Ambient  
R
q
JA  
Junction and Storage Temperature Range  
T , T  
−65 to +150  
°C  
J
stg  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
1. FR−5 = 1.0 X 0.75 X 0.62 in.  
2. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.  
ELECTRICAL CHARACTERISTICS  
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T = 25°C  
A
I
unless otherwise noted, V = 0.90 V Max. @ I = 10 mA)  
F
F
I
F
Symbol  
Parameter  
V
Reverse Zener Voltage @ I  
Reverse Current  
Z
ZT  
I
ZT  
Z
Maximum Zener Impedance @ I  
V V  
Z R  
ZT  
ZT  
V
I
V
F
R
ZT  
I
Reverse Leakage Current @ V  
Reverse Voltage  
R
R
I
V
R
I
F
Forward Current  
V
F
Forward Voltage @ I  
F
QV  
Maximum Temperature Coefficient of V  
Z
Z
C
Max. Capacitance @ V = 0 and f = 1 MHz  
R
Zener Voltage Regulator  
www.onsemi.com  
2
 
BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G  
Series  
ELECTRICAL CHARACTERISTICS − BZX84CxxxLT1 SERIES (STANDARD TOLERANCE)  
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T = 25°C unless otherwise noted, V = 0.90 V Max. @ I = 10 mA)  
A
F
F
(Devices listed in bold, italic are ON Semiconductor Preferred devices.)  
V
@ I  
(Volts)  
V
(V)  
= 1 mA  
V
(V)  
Max Reverse  
Leakage  
Current  
q
VZ  
Z1  
Z2  
Z3  
= 5 mA  
@ I  
@ I = 20 mA  
ZT3  
(mV/k)  
@ I = 5 mA  
ZT1  
ZT1  
ZT2  
(Note 3)  
Z
(W)  
@ I  
5 mA  
Z
(W)  
@ I  
1 mA  
Z
ZT3  
(W)  
@ I =  
ZT3  
(Note 3)  
ZT1  
ZT2  
(Note 3)  
C (pF)  
I
V
R
Volts  
Device  
@ V = 0  
R
=
=
R
ZT1  
ZT2  
@
Min  
Nom  
2.4  
2.7  
3
Max  
2.6  
Min  
1.7  
Max  
2.1  
2.4  
2.7  
2.9  
3.3  
3.5  
4
Min  
Max  
3.2  
Min  
Max  
0
mA  
Device*  
BZX84C2V4LT1G  
BZX84C2V7LT1G  
BZX84C3V0LT1G  
BZX84C3V3LT1G  
BZX84C3V6LT1G  
BZX84C3V9LT1G  
BZX84C4V3LT1G  
BZX84C4V7LT1/T3G  
BZX84C5V1LT1/T3G  
BZX84C5V6LT1/T3G  
BZX84C6V2LT1/T3G  
BZX84C6V8LT1/T3G  
BZX84C7V5LT1G  
BZX84C8V2LT1G  
BZX84C9V1LT1/T3G  
BZX84C10LT1G  
Marking  
f = 1 MHz  
20 mA  
Z11  
Z12  
Z13  
Z14  
Z15  
Z16  
W9  
Z1  
2.2  
2.5  
100  
100  
95  
95  
90  
90  
90  
80  
60  
40  
10  
15  
15  
15  
15  
20  
20  
25  
30  
30  
40  
45  
55  
55  
70  
600  
600  
600  
600  
600  
600  
600  
500  
480  
400  
150  
80  
2.6  
3
50  
50  
1
1
−3.5  
−3.5  
−3.5  
−3.5  
−3.5  
−3.5  
−3.5  
−3.5  
−2.7  
−2.0  
0.4  
450  
2.9  
1.9  
3.6  
50  
50  
40  
40  
30  
30  
15  
15  
10  
6
20  
10  
5
0
450  
450  
450  
450  
450  
450  
260  
225  
200  
185  
155  
140  
135  
130  
130  
130  
130  
120  
110  
105  
100  
85  
2.8  
3.2  
2.1  
3.3  
3.6  
3.9  
4.1  
4.4  
4.5  
5
3.9  
1
0
3.1  
3.3  
3.6  
3.9  
4.3  
4.7  
5.1  
5.6  
6.2  
6.8  
7.5  
8.2  
9.1  
10  
3.5  
2.3  
4.2  
1
0
3.4  
3.8  
2.7  
4.5  
5
1
0
3.7  
4.1  
2.9  
4.7  
3
1
−2.5  
0
4
4.6  
3.3  
5.1  
3
1
4.4  
5
3.7  
4.7  
5.3  
6
5.4  
3
2
0.2  
1.2  
2.5  
3.7  
4.5  
5.3  
6.2  
7.0  
8.0  
9.0  
10.0  
11.0  
13.0  
14.0  
16.0  
18.0  
20.0  
22.0  
Z2  
4.8  
5.4  
4.2  
5.9  
2
2
Z3  
5.2  
6
4.8  
5.2  
5.8  
6.4  
7
6.3  
1
2
Z4  
5.8  
6.6  
5.6  
6.6  
7.2  
7.9  
8.7  
9.6  
10.6  
11.6  
12.7  
14  
6.8  
3
4
Z5  
6.4  
7.2  
6.3  
7.4  
6
2
4
1.2  
Z6  
7
7.9  
6.9  
80  
8
6
1
5
2.5  
Z7  
7.7  
8.7  
7.6  
80  
7.7  
8.5  
9.4  
10.4  
11.4  
12.5  
13.9  
15.4  
16.9  
18.9  
20.9  
22.9  
8.8  
6
0.7  
0.5  
0.2  
0.1  
0.1  
0.1  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
5
3.2  
Z8  
8.5  
9.6  
8.4  
100  
150  
150  
150  
170  
200  
200  
225  
225  
250  
250  
9.7  
8
6
3.8  
Z9  
9.4  
10.6  
11.6  
12.7  
14.1  
15.6  
17.1  
19.1  
21.2  
23.3  
25.6  
9.3  
10.7  
11.8  
12.9  
14.2  
15.7  
17.2  
19.2  
21.4  
23.4  
25.7  
10  
10  
10  
15  
20  
20  
20  
20  
25  
25  
7
4.5  
BZX84C11LT1G  
Y1  
Y2  
Y3  
Y4  
Y5  
Y6  
Y7  
Y8  
Y9  
10.4  
11.4  
12.4  
13.8  
15.3  
16.8  
18.8  
20.8  
22.8  
11  
10.2  
11.2  
12.3  
13.7  
15.2  
16.7  
18.7  
20.7  
22.7  
8
5.4  
BZX84C12LT1G  
12  
8
6.0  
BZX84C13LT1G  
13  
8
7.0  
BZX84C15LT1/T3G  
BZX84C16LT1G  
15  
15.5  
17  
10.5  
11.2  
12.6  
14  
15.4  
16.8  
9.2  
16  
10.4  
12.4  
14.4  
16.4  
18.4  
BZX84C18LT1/T3G  
BZX84C20LT1G  
18  
19  
20  
21.1  
23.2  
25.5  
BZX84C22LT1G  
22  
85  
BZX84C24LT1G  
24  
80  
V
Below  
= 0.1 m-  
A
Max Reverse  
Leakage  
Current  
q
VZ  
(mV/k) Below  
Z2  
V
Below  
= 2 mA  
@ I  
ZT2  
V Below  
Z3  
Z1  
Z
Z
Z
@ I  
ZT1  
@ I  
ZT3  
= 10 mA  
ZT1  
ZT2  
ZT3  
@ I  
= 2 mA  
ZT1  
Below  
Below  
Below  
C (pF)  
I
V
R
Device  
Marking  
@ I  
2 mA  
=
@ I  
0.5 mA  
=
@ I  
10 mA  
=
@ V = 0  
R
f = 1 MHz  
R
ZT1  
ZT4  
ZT3  
@
Min  
Nom  
Max  
28.9  
32  
Min  
Max  
28.9  
32  
Min  
Max  
29.3  
32.4  
35.4  
38.4  
41.5  
46.5  
50.5  
54.6  
60.8  
67  
(V)  
18.9  
21  
Min  
Max  
25.3  
29.4  
33.4  
37.4  
41.2  
46.6  
51.8  
57.2  
63.8  
71.6  
79.8  
88.6  
mA  
Device*  
BZX84C27LT1G  
BZX84C30LT1G  
BZX84C33LT1/T3G  
BZX84C36LT1G  
BZX84C39LT1G  
BZX84C43LT1G  
BZX84C47LT1G  
BZX84C51LT1G  
BZX84C56LT1G  
BZX84C62LT1G  
BZX84C68LT1G  
BZX84C75LT1G  
Y10  
Y11  
Y12  
Y13  
Y14  
Y15  
Y16  
Y17  
Y18  
Y19  
Y20  
Y21  
25.1  
28  
31  
34  
37  
40  
44  
48  
52  
58  
64  
70  
27  
30  
33  
36  
39  
43  
47  
51  
56  
62  
68  
75  
80  
80  
25  
300  
300  
325  
350  
350  
375  
375  
400  
425  
450  
475  
500  
25.2  
28.1  
31.1  
34.1  
37.1  
40.1  
44.1  
48.1  
52.1  
58.2  
64.2  
70.3  
45  
50  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
21.4  
24.4  
27.4  
30.4  
33.4  
37.6  
42.0  
46.6  
52.2  
58.8  
65.6  
73.4  
70  
27.8  
30.8  
33.8  
36.7  
39.7  
43.7  
47.6  
51.5  
57.4  
63.4  
69.4  
70  
70  
70  
45  
40  
40  
40  
40  
35  
35  
35  
35  
80  
35  
55  
23.1  
25.2  
27.3  
30.1  
32.9  
35.7  
39.2  
43.4  
47.6  
52.5  
38  
90  
38  
60  
41  
130  
150  
170  
180  
200  
215  
240  
255  
41  
70  
46  
46  
80  
50  
50  
90  
54  
54  
100  
110  
120  
130  
140  
60  
60  
66  
66  
72  
72  
73.2  
80.2  
79  
79  
3. Zener voltage is measured with a pulse test current I at an ambient temperature of 25°C.  
Z
*Includes SZ-prefix devices where applicable.  
www.onsemi.com  
3
 
BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G  
Series  
ELECTRICAL CHARACTERISTICS − BZX84BxxxL (Tight Tolerance Series)  
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T = 25°C unless otherwise noted, V = 0.90 V Max. @ I = 10 mA)  
A
F
F
Max Reverse  
Leakage  
Z
ZT  
(W) @  
q
Current  
VZ  
I
ZT  
= 5 mA  
V
(Volts) @ I  
= 5 mA  
(mV/k)  
@ I = 5 mA  
Z
ZT  
C (pF)  
I
V
R
(Note 4)  
Max  
95  
(Note 4)  
Nom  
3.3  
4.7  
5.1  
5.6  
6.2  
6.8  
7.5  
8.2  
9.1  
10  
R
ZT  
@ V =0,  
Device  
@
R
Min  
3.23  
4.61  
5.00  
5.49  
6.08  
6.66  
7.35  
8.04  
8.92  
9.8  
Max  
3.37  
4.79  
5.20  
5.71  
6.32  
6.94  
7.65  
8.36  
9.28  
10.2  
12.2  
15.3  
16.3  
18.4  
22.4  
24.5  
mA  
Volts  
Min  
Max  
0
f = 1 MHz  
450  
260  
225  
200  
185  
155  
140  
135  
130  
130  
130  
110  
Marking  
Device  
BZX84B3V3LT1G  
BZX84B4V7LT1G  
BZX84B5V1LT1G  
BZX84B5V6LT1G  
BZX84B6V2LT1G  
BZX84B6V8LT1G  
BZX84B7V5LT1G  
BZX84B8V2LT1G  
BZX84B9V1LT1G, T3G  
BZX84B10LT1G  
BZX84B12LT1G  
BZX84B15LT1G  
BZX84B16LT1G  
BZX84B18LT1G  
BZX84B22LT1G  
BZX84B24LT1G  
T2A  
T10  
T11  
T12  
T13  
T14  
T15  
T16  
T17  
T2E  
T18  
T22  
T19  
T20  
T24  
T25  
5
3
2
1
3
2
1
1
2
−3.5  
−3.5  
−2.7  
−2  
80  
0.2  
1.2  
2.5  
3.7  
4.5  
5.3  
6.2  
7
60  
2
40  
2
10  
4
0.4  
15  
4
1.2  
15  
5
2.5  
15  
0.7  
0.5  
5
3.2  
15  
6
3.8  
20  
0.2  
7
4.5  
8
11.8  
14.7  
15.7  
17.6  
21.6  
23.5  
12  
25  
0.1  
8
6
10  
13  
14  
16  
20  
22  
15  
30  
0.05  
0.05  
0.05  
0.05  
0.05  
10.5  
11.2  
12.6  
15.4  
16.8  
9.2  
16  
40  
10.4  
12.4  
16.4  
18.4  
105  
100  
85  
18  
45  
22  
55  
24  
70  
80  
4. Zener voltage is measured with a pulse test current I at an ambient temperature of 25°C.  
Z
ELECTRICAL CHARACTERISTICS − BZX84BxxxL (Tight Tolerance Series)  
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T = 25°C unless otherwise noted, V = 0.90 V Max. @ I = 10 mA)  
A
F
F
Max Reverse  
Leakage  
Z
ZT  
(W) @  
q
Current  
VZ  
I
ZT  
= 2 mA  
(Note 4)  
V
(Volts) @ I  
= 2 mA  
(mV/k)  
@ I = 2 mA  
Z
ZT  
C (pF)  
I
V
R
(Note 4)  
Nom  
27  
R
ZT  
@ V =0,  
Device  
@
R
Min  
Max  
Max  
mA  
0.05  
Volts  
Min  
21.4  
Max  
f = 1 MHz  
Marking  
Device*  
BZX84B27LT1G  
T27  
26.5  
27.5  
80  
18.9  
25.3  
70  
*Includes SZ-prefix devices where applicable.  
www.onsemi.com  
4
 
BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G  
Series  
TYPICAL CHARACTERISTICS  
8
7
6
5
4
3
100  
10  
1
TYPICAL T VALUES  
C
TYPICAL T VALUES  
C
V @ I  
Z
ZT  
V @ I  
Z
ZT  
2
1
0
-1  
-ꢀ2  
-ꢀ3  
2
3
4
5
6
7
8
9
10  
11  
12  
10  
100  
V , NOMINAL ZENER VOLTAGE (V)  
Z
V , NOMINAL ZENER VOLTAGE (V)  
Z
Figure 1. Temperature Coefficients  
Figure 2. Temperature Coefficients  
(Temperature Range −55°C to +150°C)  
(Temperature Range −55°C to +150°C)  
1000  
100  
10  
1
1000  
100  
10  
T = 25°C  
75 V (MMBZ5267BLT1)  
91 V (MMBZ5270BLT1)  
J
I
Z(AC)  
f = 1 kHz  
= 0.1 I  
Z(DC)  
I = 1 mA  
Z
5 mA  
20 mA  
75°C 25°C  
0.6 0.7  
0°C  
150°C  
0.5  
1
0.4  
1
10  
V , NOMINAL ZENER VOLTAGE  
100  
0.8  
0.9  
1.0  
1.1  
1.2  
V , FORWARD VOLTAGE (V)  
F
Z
Figure 3. Effect of Zener Voltage on  
Zener Impedance  
Figure 4. Typical Forward Voltage  
www.onsemi.com  
5
BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G  
Series  
TYPICAL CHARACTERISTICS  
1000  
1000  
T = 25°C  
A
100  
10  
0 V BIAS  
1 V BIAS  
100  
1
+150°C  
BIAS AT  
50% OF V NOM  
0.1  
0.01  
Z
10  
1
+ꢀ25°C  
-ꢀ55°C  
0.001  
0.0001  
0.00001  
1
10  
100  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
V , NOMINAL ZENER VOLTAGE (V)  
Z
V , NOMINAL ZENER VOLTAGE (V)  
Z
Figure 5. Typical Capacitance  
Figure 6. Typical Leakage Current  
100  
10  
100  
10  
T = 25°C  
A
T = 25°C  
A
1
1
0.1  
0.01  
0.1  
0.01  
10  
30  
50  
70  
90  
0
2
4
6
8
10  
12  
V , ZENER VOLTAGE (V)  
Z
V , ZENER VOLTAGE (V)  
Z
Figure 8. Zener Voltage versus Zener Current  
(12 V to 91 V)  
Figure 7. Zener Voltage versus Zener Current  
(VZ Up to 12 V)  
www.onsemi.com  
6
BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G  
Series  
PACKAGE DIMENSIONS  
SOT−23 (TO−236)  
CASE 318−08  
ISSUE AR  
NOTES:  
D
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.  
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF  
THE BASE MATERIAL.  
0.25  
3
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,  
PROTRUSIONS, OR GATE BURRS.  
T
H
E
E
1
2
MILLIMETERS  
INCHES  
DIM  
A
A1  
b
c
D
E
e
L
L1  
MIN  
0.89  
0.01  
0.37  
0.08  
2.80  
1.20  
1.78  
0.30  
0.35  
2.10  
0°  
NOM  
1.00  
0.06  
0.44  
0.14  
2.90  
1.30  
1.90  
0.43  
0.54  
2.40  
−−−  
MAX  
MIN  
0.035  
0.000  
0.015  
0.003  
0.110  
0.047  
0.070  
0.012  
0.014  
0.083  
0°  
NOM  
0.039  
0.002  
0.017  
0.006  
0.114  
0.051  
0.075  
0.017  
0.021  
0.094  
−−−  
MAX  
0.044  
0.004  
0.020  
0.008  
0.120  
0.055  
0.080  
0.022  
0.027  
0.104  
10°  
L
1.11  
0.10  
0.50  
0.20  
3.04  
1.40  
2.04  
0.55  
0.69  
2.64  
10°  
3X  
b
L1  
VIEW C  
e
TOP VIEW  
A
H
E
T
c
A1  
SEE VIEW C  
SIDE VIEW  
STYLE 8:  
PIN 1. ANODE  
END VIEW  
2. NO CONNECTION  
3. CATHODE  
RECOMMENDED  
SOLDERING FOOTPRINT  
3X  
2.90  
0.90  
3X  
0.95  
0.80  
PITCH  
DIMENSIONS: MILLIMETERS  
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
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◊
BZX84C2V4LT1/D  
厂商 型号 描述 页数 下载

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