PHOTODIODE, .74mm2
NXIR-RF74
FEATURES
• Near Infrared Reduced Footprint Photodiode
• Photosensitive active area: 0.86mm x 0.86mm
• High Sensitivity: 0.65 A/W (ʎ=850nm)
• Wide Operating Temperature: -40°C TO 110°C
• Ideal for High Volume Laser Monitoring Applications
• RoHS and REACH Compliant
Dimensions are in inch [metric] units
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Active Area
TEST CONDITIONS
MIN
TYP
.74
MAX
0.75
UNITS
mm2
A/W
nA
@ 850nm
Vr = 3V
.65
Responsivity, R
Dark Current, Idr
Shunt Resistance
0.1
VR = 10mV
200
25
800
MΩ
Volts
pF
Reverse Breakdown Voltage, VR
Capacitance, C
IR = 10µA
VR = 0V
8
Rise Time
VR = 10V
8
15
nsec
THERMAL PARAMETERS
Storage and Operating Temperature Range
Maximum Junction Temperature
-40°C TO 110°C
110°C
1260 Calle Suerte, Camarillo, California 93012
Phone: (805) 499-0335, FAX: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
Revision December 7, 2016
