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4R3STX

型号:

4R3STX

品牌:

SSDI[ SOLID STATES DEVICES, INC ]

页数:

2 页

PDF大小:

171 K

2R3S THRU 20R3S  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
Designer’s Data Sheet  
8 AMPS  
20 – 200 VOLTS  
35 nsec  
Part Number/Ordering Information 1/  
R3S  
__  
__  
Screening3/ __ = Not Screened  
TX = TX Level  
HYPER FAST RECTIFIER  
TXV = TXV Level  
S = S Level  
Features:  
Family/Voltage  
2 = 20V  
3 = 30V  
4 = 40V  
5 = 50V  
Hyper Fast Recovery: 35nsec Maximum  
Low Forward Voltage Drop  
Low Reverse Leakage Current  
Single Chip Construction  
Hermetically Sealed Package  
7 = 70V  
10 = 100V  
12 = 125V  
15 = 150V  
20 = 200V  
Metalurgically Bonded Construction  
TX, TXV, and S-Level Screening Available 2/  
Maximum Ratings 2/  
Symbol  
Value  
Units  
2R3S  
3R3S  
20  
30  
4R3S  
40  
5R3S  
7R3S  
10R3S  
12R3S  
15R3S  
20R3S  
VRRM  
VRWM  
VR  
50  
70  
100  
125  
150  
200  
Peak Repetitive Reverse Voltage  
Volts  
Average Rectified Forward Current  
Io  
8
200  
Amps  
Amps  
ºC  
(Resistive Load, 60 Hz Sine Wave, TA = 25 °C)  
Peak Surge Current  
(8.3 ms Pulse, Half Sine Wave, TA = 25 °C)  
IFSM  
TOP  
TSTG  
&
Operating & Storage Temperature  
-65 to +175  
1.5  
Maximum Total Thermal Resistance  
Junction to Case  
ºC/W  
RθJC  
DO-4:  
Notes:  
1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory.  
2/ Unless Otherwise Specified, All Maximum Ratings/Electrical Characteristics @25°C.  
3/ Screened to MIL-PRF-19500.  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: RC0029D  
DOC  
2R3S THRU 20R3S  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, CA 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
Electrical Characteristics  
Symbol  
Max  
Units  
Instantaneous Forward Voltage Drop  
(IF=8A, TA=25 ºC, 300μsec pulse)  
0.90  
VF  
VDC  
Reverse Leakage Current  
(Rated VR, TA=25 ºC, 300μsec pulse minimum)  
100  
2.0  
35  
IR1  
IR2  
tRR  
CJ  
μA  
mA  
nsec  
pF  
Reverse Leakage Current  
(Rated VR, TA=100 ºC, 300μsec pulse minimum)  
Reverse Recovery Time  
(TA=25 ºC, IF = 0.5A, IR = 1.0A, IRR = 0.25A)  
Typical Junction Capacitance  
(VR = 10VDC, TA = 25ºC, f = 1MHz)  
300  
Notes:  
1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory.  
2/ Screened to MIL-PRF-19500.  
3/ Unless Otherwise Specified, All Maximum Ratings/Electrical Characteristics @25°C.  
Case Outline: DO-4  
Stud: Cathode  
Lead: Anode  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: RC0029D  
DOC  
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