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SZSL12T1G

型号:

SZSL12T1G

品牌:

ONSEMI[ ONSEMI ]

页数:

5 页

PDF大小:

95 K

SL05T1G Series  
300 Watt, SOT-23 Low  
Capacitance TVS for High  
Speed Line Protections  
This family of TVS offers transient overvoltage protection with  
significantly reduced capacitance. The capacitance is lowered by  
integrating a compensating diode in series. This integrated solution  
offers ESD protection for high speed interfaces such as communication  
systems, computers, and computer peripherals.  
www.onsemi.com  
2
1
3 (NC)  
Features  
TVS Diode in Series with a Compensating Diode Offers <5 pF  
MARKING  
DIAGRAM  
Capacitance  
3
ESD Protection Meeting IEC 61000−4−2, 4−4, 4−5  
Peak Power Rating of 300 W, 8 × 20 ms  
Lxx M G  
1
G
Bi−Direction Protection Can Be Achieved By Using Two Devices  
Flammability Rating UL 94 V−0  
2
SOT−23 (TO−236)  
CASE 318  
SZ Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AEC−Q101 Qualified and  
PPAP Capable  
Lxx = Device Code  
xx = 05, 12, 15, or 24  
= Date Code*  
= Pb−Free Package  
STYLE 26  
M
G
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
(Note: Microdot may be in either location)  
Compliant  
*Date Code orientation and/or overbar may vary  
depending upon manufacturing location.  
Mechanical Characteristics:  
CASE: Void-free, transfer-molded, thermosetting plastic case  
FINISH: Corrosion resistant finish, easily solderable  
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:  
260°C for 10 Seconds  
Package designed for optimal automated board assembly  
Small package size for high density applications  
Available in 8 mm Tape and Reel  
ORDERING INFORMATION  
Device  
Package  
Shipping  
SL05T1G  
SOT−23  
3000/Tape & Reel  
(Pb−Free)  
SZSL05T1G  
SL12T1G  
SOT−23  
(Pb−Free)  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
Use the Device Number to order the 7 inch/3,000 unit reel.  
Replace the “T1” with “T3” in the Device Number to order the  
13 inch/10,000 unit reel.  
SOT−23  
(Pb−Free)  
SZSL12T1G  
SOT−23  
(Pb−Free)  
SL15T1G  
SOT−23  
(Pb−Free)  
3000/Tape & Reel  
3000/Tape & Reel  
SZSL15T1G  
SOT−23  
(Pb−Free)  
SL24T1G  
SOT−23  
(Pb−Free)  
3000/Tape & Reel  
3000/Tape & Reel  
SZSL24T1G  
SOT−23  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
DEVICE MARKING INFORMATION  
See specific marking information in the device marking  
column of the table on page 2 of this data sheet.  
© Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
October, 2016 − Rev. 10  
SL05T1/D  
SL05T1G Series  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Peak Power Dissipation @ 8x20 usec (Note 1)  
P
pk  
300  
W
@ T 25°C  
L
IEC 61000−4−2  
Contact Discharge  
Air Discharge  
IEC 61000−4−4  
IEC 61000−4−5  
Level 4  
V
pp  
8
16  
40  
12  
kV  
kV  
A
EFT  
Lightning  
A
Total Power Dissipation on FR−5 Board (Note 2) @ T = 25°C  
°P °  
D
225  
1.8  
°mW°  
mW/°C  
A
Derate above 25°C  
Thermal Resistance Junction to Ambient  
R
556  
°C/W  
q
JA  
Total Power Dissipation on Alumina Substrate (Note 3) @ T = 25°C  
°P °  
D
300  
2.4  
°mW  
mW/°C  
A
Derate above 25°C  
Thermal Resistance Junction−to−Ambient  
Junction and Storage Temperature Range  
Lead Solder Temperature − Maximum (10 Second Duration)  
R
417  
− 55 to +150  
260  
°C/W  
°C  
q
JA  
T , T  
J
stg  
T
°C  
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
1. Non−repetitive current pulse per Figure 2  
2. FR−5 = 1.0 x 0.75 x 0.62 in.  
3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina  
ELECTRICAL CHARACTERISTICS  
I
(T = 25°C unless otherwise noted)  
UNIDIRECTIONAL  
A
I
F
Symbol  
Parameter  
I
PP  
Maximum Reverse Peak Pulse Current  
V
C
Clamping Voltage @ I  
PP  
V
C
V
V
BR RWM  
V
V
Working Peak Reverse Voltage  
I
V
F
RWM  
R
T
I
I
R
Maximum Reverse Leakage Current @ V  
RWM  
V
Breakdown Voltage @ I  
Test Current  
BR  
T
I
T
I
PP  
QV  
Maximum Temperature Coefficient of V  
Forward Current  
BR  
BR  
I
F
Uni−Directional TVS  
V
F
Forward Voltage @ I  
F
Z
Maximum Zener Impedance @ I  
Reverse Current  
ZT  
ZT  
I
ZK  
Z
ZK  
Maximum Zener Impedance @ I  
ZK  
ELECTRICAL CHARACTERISTICS  
Breakdown Voltage  
V , Clamping Voltage  
C
(Note 4)  
(Note 5)  
Capacitance  
Max  
V
@ 1 mA (Volts)  
@ 1 A  
(V)  
@ 5 A  
(V)  
11  
@ V = 0 V, 1 MHz (pF)  
I
V
I @ V  
R RWM  
BR  
R
PP  
RWM  
Device  
Marking  
(A)  
(V)  
(mA)  
20  
Min  
Max  
8.0  
Typ  
3.5  
3.5  
3.5  
3.5  
Max  
5.0  
5.0  
5.0  
5.0  
Device  
SL05  
SL12  
SL15  
SL24  
L05  
L12  
L15  
L24  
5.0  
12  
15  
24  
6.0  
9.8  
19  
17  
12  
10  
5.0  
1.0  
1.0  
1.0  
13.3  
16.7  
26.7  
15.5  
18.5  
29  
24  
24  
30  
43  
55  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
4. V measured at pulse test current of 1 mA at an ambient temperature of 25°C  
BR  
5. Surge current waveform per Figure 2  
www.onsemi.com  
2
 
SL05T1G Series  
TYPICAL CHARACTERISTICS  
10  
1
100  
t
r
PEAK VALUE I  
@ 8 ms  
RSM  
90  
80  
70  
60  
50  
40  
30  
PULSE WIDTH (t ) IS DEFINED  
AS THAT POINT WHERE THE  
PEAK CURRENT DECAY = 8 ms  
P
HALF VALUE I  
/2 @ 20 ms  
RSM  
0.1  
t
P
20  
10  
0
0.01  
0.1  
1
10  
100  
1000  
0
20  
40  
t, TIME (ms)  
60  
80  
PULSE WIDTH (ms)  
Figure 1. Maximum Peak Power Rating  
Figure 2. 8 × 20 ms Pulse Waveform  
4
3.5  
3
10  
1
SL05T1  
2.5  
2
SL05  
SL15  
SL24  
1.5  
1
0.1  
0.5  
0
0.01  
@ ZERO BIAS  
@ 50% V  
@ V  
−55  
25  
150  
RWM  
RWM  
TEMPERATURE (°C)  
Figure 3. Typical Junction Capacitance  
Figure 4. Typical Leakage Over Temperature  
www.onsemi.com  
3
SL05T1G Series  
Applications Background  
This family of TVS devices (SL05T1 series) are designed  
to protect sensitive electronics such as communications  
systems, computers, and computer peripherals against  
damage due to ESD conditions or transient voltage  
conditions. Because of their low capacitance value (less than  
5 pF), they can be used in high speed I/O data lines. Low  
capacitance is achieved by integrating a compensating diode  
in series with the TVS which is basically based in the below  
theoretical principle:  
Capacitance in parallel: CT = C1+C2+....+Cn  
Capacitance in series: 1/CT = (1/C1)+(1/C2)+....+(1/Cn)  
The Figure 5 shows the integrated solution of the SL05T1  
series device:  
2
1
1
2
3
3
Figure 6.  
An alternative solution to protect unidirectional lines, is to  
connect a fast switching steering diode in parallel with the  
SL05T1 series device. When the steering diode is  
forward−biased, the TVS will avalanche and conduct in  
reverse direction. It is important to note that by adding a  
steering diode, the effective capacitance in the circuit will be  
increased, therefore the impact of adding a steering diode  
must be taken in consideration to establish whether the  
incremental capacitance will affect the circuit functionality  
or not. The Figure 7 shows the connection between the  
steering diode and the SL05T1 series device:  
COMPENSATING  
DIODE  
TVS  
Figure 5.  
In the case that an over−voltage condition occurs in the I/O  
line protected by the SL05T1 series device, the TVS is  
reversed−biased while the compensation diode is  
forward−biased so the resulting current due to the transient  
voltage is drained to ground.  
SL05T1 DEVICE  
If protection in both polarities is required, an additional  
device is connected in inverse−parallel with reference to the  
first one, the Figure 6 illustrates the inverse−parallel  
connection for bi−directional or unidirectional lines:  
STEERING DIODE  
Figure 7.  
Another typical application in which the SL05T1 series  
device can be utilized, is to protect multiple I/O lines. The  
protection in each of the I/O lines is achieved by connecting  
two devices in inverse−parallel. The Figure 8 illustrates how  
multiple I/O line protection is achieved:  
INPUT  
OUTPUT  
Figure 8.  
For optimizing the protection, it is recommended to use ground planes and short path lengths to minimize the PCB’s ground inductance.  
www.onsemi.com  
4
 
SL05T1G Series  
PACKAGE DIMENSIONS  
SOT−23 (TO−236)  
CASE 318−08  
ISSUE AR  
NOTES:  
D
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.  
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF  
THE BASE MATERIAL.  
0.25  
3
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,  
PROTRUSIONS, OR GATE BURRS.  
T
H
E
E
1
2
MILLIMETERS  
INCHES  
DIM  
A
A1  
b
c
D
E
e
L
L1  
MIN  
0.89  
0.01  
0.37  
0.08  
2.80  
1.20  
1.78  
0.30  
0.35  
2.10  
0°  
NOM  
1.00  
0.06  
0.44  
0.14  
2.90  
1.30  
1.90  
0.43  
0.54  
2.40  
−−−  
MAX  
MIN  
0.035  
0.000  
0.015  
0.003  
0.110  
0.047  
0.070  
0.012  
0.014  
0.083  
0°  
NOM  
0.039  
0.002  
0.017  
0.006  
0.114  
0.051  
0.075  
0.017  
0.021  
0.094  
−−−  
MAX  
0.044  
0.004  
0.020  
0.008  
0.120  
0.055  
0.080  
0.022  
0.027  
0.104  
10°  
L
1.11  
0.10  
0.50  
0.20  
3.04  
1.40  
2.04  
0.55  
0.69  
2.64  
10°  
3X  
b
L1  
VIEW C  
e
TOP VIEW  
A
H
E
T
c
A1  
SEE VIEW C  
SIDE VIEW  
STYLE 26:  
PIN 1. CATHODE  
2. ANODE  
END VIEW  
3. NO CONNECTION  
RECOMMENDED  
SOLDERING FOOTPRINT*  
3X  
2.90  
0.90  
3X  
0.95  
0.80  
PITCH  
DIMENSIONS: MILLIMETERS  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage  
may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer  
is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of  
any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and  
do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s  
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized  
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices  
intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and  
hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees  
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was  
negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright  
laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81−3−5817−1050  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA  
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada  
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
SL05T1/D  
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