5L45AS
5L45SB
5L45SP
Trench MOS Barrier Schottky Rectifier
Features
• Advanced trench technology
• Low forward voltage drop
• Low power losses
• High efficiency operation
SMAꢀ
SMB-FL
5L45SB
TO-277
5L45SP
5L45ASꢀ
• Lead Free Finish, RoHS Compliant
Applications
• DC/DC Converters
• AC/DC Adaptors
1
2
Cathode
3
Anode
Maximum ratings and electrical characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
VRRM
Limit
45
Unit
V
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
Operating junction and storage temperature range
5
A
IF(AV)
IFSM
TJ, TSTG
RƟJL
150
A
°C
-40 to +150
20
SMA/SMB-FL
Typical thermal resistance per diode
(Mounted on FR-4 PCB)
°C/W
72
TO-277
TYP.
MAX.
0.49
-
VF(1)
IR(2)
IF=5A TJ=25°C
IF=5A TJ=125°C
0.46
0.38
7
Instantaneous forward voltage
TJ=25°C
50
uA
Instantaneous reverse current per diode
at rated reverse voltage
Notes:
TJ=125°C
-
10
mA
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≦ 40 ms
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