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1SS133M_15

型号：

1SS133M_15

品牌：

TSC[ TAIWAN SEMICONDUCTOR COMPANY, LTD ]

页数：

4 页

PDF大小：

223 K

下载PDF手册
1SS133M  
Taiwan Semiconductor  
Small Signal Product  
300mW, Hermetically Sealed Glass Switching Diodes  
FEATURES  
- Fast switching device (trr < 4.0 ns)  
- Through-hole mount device type  
- DO-34 package (JEDEC DO-204)  
- Hermetically sealed glass  
- Compression bonded construction  
- All external surfaces are corrosion resistant  
and leads are readily solderable  
- RoHS compliant  
DO-34  
- Solder hot dip Tin (Sn) lead finish  
- Cathode indicated by polarity band  
- Marking code: 133  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)  
PARAMETER  
VALUE  
SYMBOL  
PD  
UNIT  
mW  
V
Power Dissipation  
300  
Working Inverse Voltage  
Average Rectified Current  
WIV  
90  
IO  
150  
mA  
mA  
A
oC  
oC  
Non-Repetitive Peak Forward Current  
Peak Forward Surge Current  
IFM  
450  
IFSURGE  
TJ  
2
Operating Junction Temperature  
Storage Temperature Range  
+ 175  
-65 to +200  
TSTG  
PARAMETER  
MIN  
MAX  
--  
SYMBOL  
UNIT  
IR=500nA  
IF=100mA  
VR=80V  
Breakdown Voltage  
BV  
VF  
IR  
80  
V
V
Forward Voltage  
1.2  
500  
4.0  
4.0  
Reverse Leakage Current  
Junction Capacitance  
Reverse Recovery Time  
nA  
pF  
ns  
VR=0, f=1.0MHz  
(Note 1)  
Cj  
trr  
--  
--  
Notes: 1. Reverse Recovery Test Conditions: IF=IR=10mA, RL=100Ω, IRR=1mA  
Document Number: DS_S1403003  
Version: C15  
1SS133M  
Taiwan Semiconductor  
Small Signal Product  
RATINGS AND CHARACTERISTICS CURVES  
(TA=25°C unless otherwise noted)  
Fig. 1 Forward Characteristics  
Fig. 2 Reverse Characteristics  
TA=100oC  
100  
10000  
1000  
100  
10  
TA=75oC  
TA=50oC  
10  
TA=125oC  
TA=75oC  
TA=25oC  
1
TA=25oC  
TA=-25oC  
1
0.1  
0
20  
40  
60  
80  
100  
120  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
Forward Voltage : VF (V)  
Reverse Voltage : VR (V)  
Fig. 4 Reverse Recovery Time Characteristics  
Fig. 3 Capacitance Between Terminals Characteristics  
f = 1 MHz  
5
4
3
2
1
0
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
VR = 6 V  
Irr = 1/10 IR  
0
4
8
12  
16  
20  
0
5
10  
15  
20  
25  
30  
Forward Current : IF (mA)  
Reverse Voltage : VR (V)  
Fig. 5 Surge Current Characteristics  
Fig. 6 Reverse Recovery Time ( trr )  
Measurement Circuit  
100  
10  
1
0.1  
1
10  
100  
1000  
10000  
Pulse Width : Tw (ms)  
Document Number: DS_S1403003  
Version: C15  
1SS133M  
Taiwan Semiconductor  
Small Signal Product  
ORDER INFORMATION (EXAMPLE)  
1SS133M R0G  
Green compound code  
Packing code  
Part no.  
PACKAGE OUTLINE DIMENSIONS  
Unit(mm)  
Unit(inch)  
DIM.  
Min  
Max  
0.55  
Min  
0.012  
0.085  
1.000  
0.050  
Max  
0.022  
0.120  
1.500  
0.079  
A
B
C
D
0.30  
2.16  
3.04  
25.40  
1.27  
38.10  
2.00  
Document Number: DS_S1403003  
Version: C15  
1SS133M  
Taiwan Semiconductor  
Small Signal Product  
Notice  
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,  
assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied,to  
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of  
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,  
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,  
merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or seling these products for use in such applications do so at their own risk and agree to fully  
indemnify TSC for any damages resulting from such improper use or sale.  
Document Number: DS_S1403003  
Version: C15  
厂商 型号 描述 页数 下载

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Carling Technologies

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Carling Technologies

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Carling Technologies

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