JX020 Series
FIG.1 Maximum power dissipation versus RMS
JieJie Microelectronics CO. , Ltd
FIG.2: RMS on-state current versus case
on-state current
temperature
IT(RMS) (A)
P(w)
3
3
α=180°
TO-126
TO-251/
TO-252
2
1
2
TO-92
1
IT(RMS) (A)
Tc (℃)
0
0
0
0.5
1.0
1.5
2.0
2.5
0
25
50
75
100
125
FIG.3: Surge peak on-state current versus
FIG.4: On-state characteristics (maximum
number of cycles
values)
ITM (A)
ITSM (A)
20
15
10
5
20
tp=10ms
One cycle
10
Tj=Tjmax
1
Tj=25℃
Number of cycles
10 100
VTM (V)
3.0
0.1
0
1
0
1.0
2.0
4.0
5.0
1000
FIG.5: Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms, and
corresponging value of I2t (dI/dt < 50A/μs)
FIG.6: Relative variations of gate trigger
current, holding current and latching current
versus junction temperature
2
ITSM (A), I2t (A s)
IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃)
3.0
300
ITSM
2.5
2.0
100
IGT
1.5
1.0
dI/dt
IH&IL
10
1
I2t
0.5
0.0
Tj (℃)
tp(ms)
-40
0
40
80
120
0.01
0.1
1
10
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