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SZNUP3105L

型号:

SZNUP3105L

品牌:

ONSEMI[ ONSEMI ]

页数:

4 页

PDF大小:

83 K

NUP3105L, SZNUP3105L  
Dual Line CAN  
Bus Protector  
The SZ/NUP3105L has been designed to protect the CAN  
transceiver in 24 V systems from ESD and other harmful transient  
voltage events. This device provides bidirectional protection for each  
data line with a single compact SOT−23 package, giving the system  
designer a low cost option for improving system reliability and  
meeting stringent EMI requirements.  
www.onsemi.com  
SOT−23  
DUAL BIDIRECTIONAL  
VOLTAGE SUPPRESSOR  
350 W PEAK POWER  
Features  
350 W Peak Power Dissipation per Line (8/20 msec Waveform)  
Low Reverse Leakage Current (< 100 nA)  
Low Capacitance High−Speed CAN Data Rates  
IEC Compatibility: − IEC 61000−4−2 (ESD): Level 4  
− IEC 61000−4−4 (EFT): 50 A – 5/50 ns  
− IEC 61000−4−5 (Lighting) 8.0 A (8/20 ms)  
Flammability Rating UL 94 V−0  
SZ Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AEC−Q101 Qualified and  
PPAP Capable  
SOT−23  
CASE 318  
STYLE 27  
PIN 1  
PIN 3  
PIN 2  
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
Applications  
CAN_H  
Industrial Control Networks  
CAN  
Transceiver  
CAN Bus  
®
CAN_L  
Smart Distribution Systems (SDS )  
DeviceNet  
Automotive Networks  
Low and High−Speed CAN  
Fault Tolerant CAN  
Trucks  
NUP3105L  
MARKING DIAGRAM  
27F MG  
G
1
27F  
M
= Device Code  
= Date Code  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 3 of this data sheet.  
© Semiconductor Components Industries, LLC, 2014  
1
Publication Order Number:  
October, 2016 − Rev. 3  
NUP3105L/D  
NUP3105L, SZNUP3105L  
MAXIMUM RATINGS (T = 25°C, unless otherwise specified)  
J
Symbol  
Rating  
Value  
Unit  
PPK  
Peak Power Dissipation  
8 x 20 ms Double Exponential Waveform (Note 1)  
W
350  
T
Operating Junction Temperature Range  
Storage Temperature Range  
−55 to 150  
−55 to 150  
260  
°C  
°C  
°C  
J
T
J
T
L
Lead Solder Temperature (10 s)  
ESD  
Human Body model (HBM)  
Machine Model (MM)  
IEC 61000−4−2 Specification (Contact)  
8.0  
400  
30  
kV  
V
kV  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
1. Non−repetitive current pulse per Figure 1.  
ELECTRICAL CHARACTERISTICS (T = 25°C, unless otherwise specified)  
J
Symbol  
Parameter  
Reverse Working Voltage  
Breakdown Voltage  
Test Conditions  
Min  
Typ  
Max  
32  
Unit  
V
V
RWM  
(Note 2)  
I = 1 mA (Note 3)  
V
BR  
35.6  
V
T
I
R
Reverse Leakage Current  
Clamping Voltage  
V
RWM  
= 32 V  
100  
59  
nA  
V
V
C
I
PP  
= 5 A (8/20 ms Waveform)  
(Note 4)  
V
C
Clamping Voltage  
I
PP  
= 8 A (8/20 ms Waveform)  
66  
V
(Note 4)  
I
Maximum Peak Pulse Current  
Capacitance  
8/20 ms Waveform (Note 4)  
8.0  
30  
A
PP  
CJ  
V
R
= 0 V, f = 1 MHz (Line to GND)  
pF  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
2. TVS devices are normally selected according to the working peak reverse voltage (V  
or continuous peak operating voltage level.  
), which should be equal or greater than the DC  
RWM  
3. V is measured at pulse test current I .  
BR  
T
4. Pulse waveform per Figure 1.  
TYPICAL PERFORMANCE CURVES  
(T = 25°C unless otherwise noted)  
J
12.0  
110  
100  
90  
WAVEFORM  
PARAMETERS  
PULSE WAVEFORM  
8 x 20 ms per Figure 1  
10.0  
8.0  
t = 8 ms  
r
80  
t = 20 ms  
d
c−t  
70  
60  
50  
t = I /2  
d
PP  
6.0  
40  
30  
20  
10  
0
4.0  
2.0  
0
5
10  
15  
t, TIME (ms)  
20  
25  
30  
45  
50  
55  
60  
65  
70  
V , CLAMPING VOLTAGE (V)  
C
Figure 1. Pulse Waveform, 8/20 ms  
Figure 2. Clamping Voltage vs Peak Pulse Current  
www.onsemi.com  
2
 
NUP3105L, SZNUP3105L  
TVS Diode Protection Circuit  
voltage of the diode that is reversed biased, plus the diode  
drop of the second diode that is forwarded biased.  
TVS diodes provide protection to a transceiver by  
clamping a surge voltage to a safe level. TVS diodes have  
high impedance below and low impedance above their  
breakdown voltage. A TVS Zener diode has its junction  
optimized to absorb the high peak energy of a transient  
event, while a standard Zener diode is designed and  
specified to clamp a steady state voltage.  
CAN_H  
CAN  
Transceiver  
CAN Bus  
CAN_L  
NUP3105L  
Figure 3 provides an example of a dual bidirectional  
TVS diode array that can be used for protection with the  
high−speed CAN network. The bidirectional array is created  
from four identical Zener TVS diodes. The clamping  
voltage of the composite device is equal to the breakdown  
Figure 3. High−Speed and Fault Tolerant CAN TVS  
Protection Circuit  
ORDERING INFORMATION  
Device  
Package  
SOT−23  
Shipping  
NUP3105LT1G  
3,000 / Tape & Reel  
(Pb−Free)  
SZNUP3105LT1G*  
NUP3105LT3G  
SOT−23  
(Pb−Free)  
3,000 / Tape & Reel  
10,000 / Tape & Reel  
10,000 / Tape & Reel  
SOT−23  
(Pb−Free)  
SZNUP3105LT3G*  
SOT−23  
(Pb−Free)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
*SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP  
Capable.  
www.onsemi.com  
3
 
NUP3105L, SZNUP3105L  
PACKAGE DIMENSIONS  
SOT−23 (TO−236)  
CASE 318−08  
ISSUE AR  
NOTES:  
D
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.  
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF  
THE BASE MATERIAL.  
0.25  
3
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,  
PROTRUSIONS, OR GATE BURRS.  
T
H
E
E
1
2
MILLIMETERS  
INCHES  
DIM  
A
A1  
b
c
D
E
e
L
L1  
MIN  
0.89  
0.01  
0.37  
0.08  
2.80  
1.20  
1.78  
0.30  
0.35  
2.10  
0°  
NOM  
1.00  
0.06  
0.44  
0.14  
2.90  
1.30  
1.90  
0.43  
0.54  
2.40  
−−−  
MAX  
MIN  
0.035  
0.000  
0.015  
0.003  
0.110  
0.047  
0.070  
0.012  
0.014  
0.083  
0°  
NOM  
0.039  
0.002  
0.017  
0.006  
0.114  
0.051  
0.075  
0.017  
0.021  
0.094  
−−−  
MAX  
0.044  
0.004  
0.020  
0.008  
0.120  
0.055  
0.080  
0.022  
0.027  
0.104  
10°  
L
1.11  
0.10  
0.50  
0.20  
3.04  
1.40  
2.04  
0.55  
0.69  
2.64  
10°  
3X  
b
L1  
VIEW C  
e
TOP VIEW  
A
H
E
T
c
A1  
STYLE 27:  
SEE VIEW C  
SIDE VIEW  
PIN 1. CATHODE  
2. CATHODE  
3. CATHODE  
END VIEW  
RECOMMENDED  
SOLDERING FOOTPRINT*  
3X  
2.90  
0.90  
3X  
0.95  
0.80  
PITCH  
DIMENSIONS: MILLIMETERS  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
Honeywell and SDS are registered trademarks of Honeywell International Inc.  
DeviceNet is a trademark of Rockwell Automation.  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage  
may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer  
is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of  
any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and  
do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s  
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized  
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices  
intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and  
hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees  
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was  
negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright  
laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81−3−5817−1050  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA  
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada  
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
NUP3105L/D  
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