PXFC191507FC
Thermally-Enhanced High Power RF LDMOS FET
150 W, 28 V, 1805 – 1990 MHz
Description
PXFC191507FC
Package H-37248G-4/2
The PXFC191507FC is a 150-watt LDMOS FET intended for use
in multi-standard cellular power amplifier applications in the 1805
to 1990 MHz frequency band. Features include input and output
matching, high gain and thermally-enhanced package with earless
flanges. Manufactured with Infineon's advanced LDMOS process,
this device provides excellent thermal performance and superior
reliability.
Features
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 960 mA, VGS = 2.65 V,
ƒ = 1990 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
•
•
Broadband internal input and output matching
Typical Pulsed CW performance, 1990 MHz, 28 V,
10 µs pulse width, 10% duty cycle, class AB test
- Output power at P
- Efficiency = 54%
- Gain = 19.5 dB
= 140 W
1dB
22
21
20
19
18
17
16
60
50
40
30
20
10
0
Gain
•
Typical single-carrier WCDMA performance,
1990 MHz, 28 V, 10 dB PAR @ 0.01% CCDF, Test
Model 1 with 16DPCH
- Output power = 32 W avg
- Efficiency = 34%
- Gain = 20 dB
- ACPR = –31 dBc@ 5 MHz
Efficiency
•
•
Capable of handling 10:1 VSWR @28 V, 150 W
(CW) output power
Integrated ESD protection : Human Body Model,
c191507fc_g1
Class 1C (per JESD22-A114)
29
33
37
41
45
49
53
•
•
Low thermal resistance
Output Power (dBm)
Pb-free and RoHS compliant
RF Characteristics
Two-carrier WCDMA Specifications (tested in Infineon production test fixture)
= 28 V, I = 960 mA, P = 32 W avg, ƒ = 1980 MHz, ƒ = 1990 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
V
DD
DQ
OUT
1
2
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Gain
Symbol
Min
19
Typ
20.5
31
Max
—
Unit
dB
G
ps
Drain Efficiency
Intermodulation Distortion
hD
29
—
%
IMD
—
–33
–31
dBc
All published data at T
= 25°C unless otherwise indicated
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 8
Rev. 02.1, 2016-06-22
