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LY651024RL-20LLT

型号：

LY651024RL-20LLT

品牌：

LYONTEK[ Lyontek Inc. ]

页数：

13 页

PDF大小：

452 K

下载PDF手册
®
LY651024  
128K X 8 BIT HIGH SPEED CMOS SRAM  
Rev. 1.1  
REVISION HISTORY  
Revision  
Rev. 1.0  
Rev. 1.1  
Description  
Initial Issue  
Delete E-grade  
Issue Date  
Aug.27.2010  
Apr. 06. 2012  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
0
®
LY651024  
128K X 8 BIT HIGH SPEED CMOS SRAM  
Rev. 1.1  
FEATURES  
GENERAL DESCRIPTION  
The LY651024 is a 1,048,576-bit low power CMOS  
static random access memory organized as 131,072  
words by 8 bits. It is fabricated using very high  
performance, high reliability CMOS technology. Its  
standby current is stable within the range of  
operating temperature.  
„ Fast access time : 20ns  
„ Low power consumption:  
Operating current : 30mA (TYP.)  
Standby current : 2μA (TYP.)  
„ Single 5V power supply  
„ All inputs and outputs TTL compatible  
„ Fully static operation  
The LY651024 is well designed for very high speed  
system applications, and particularly well suited for  
battery back-up nonvolatile memory application.  
„ Tri-state output  
„ Data retention voltage : 2.0V (MIN.)  
„ Green package available  
„ Package : 32-pin 300 mil SOJ  
32-pin 8mm x 20mm TSOP-I  
32-pin 8mm x 13.4mm STSOP  
The LY651024 operates from a single power  
supply of 3V~5V and all inputs and outputs are fully  
TTL compatible  
PRODUCT FAMILY  
Power Dissipation  
Speed  
Product  
Family  
LY651024(LL)  
LY651024(LLI)  
Operating  
Temperature  
0 ~ 70℃  
Vcc Range  
Standby(ISB1,TYP.)  
Operating(Icc,TYP.)  
30mA  
4.5 ~ 5.5V  
4.5 ~ 5.5V  
20ns  
20ns  
2µA  
2µA  
-40 ~ 85℃  
30mA  
FUNCTIONAL BLOCK DIAGRAM  
PIN DESCRIPTION  
SYMBOL  
DESCRIPTION  
Address Inputs  
Vcc  
Vss  
A0 - A16  
DQ0 – DQ7 Data Inputs/Outputs  
CE#, CE2  
WE#  
OE#  
Chip Enable Inputs  
Write Enable Input  
Output Enable Input  
Power Supply  
128Kx8  
MEMORY ARRAY  
A0-A16  
DECODER  
VCC  
VSS  
Ground  
NC  
No Connection  
I/O DATA  
CIRCUIT  
DQ0-DQ7  
COLUMN I/O  
CE#  
CE2  
WE#  
OE#  
CONTROL  
CIRCUIT  
PIN CONFIGURATION  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
1
®
LY651024  
128K X 8 BIT HIGH SPEED CMOS SRAM  
Rev. 1.1  
NC  
A16  
A14  
A12  
A7  
1
2
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
Vcc  
A15  
CE2  
WE#  
A13  
A8  
3
4
A11  
A9  
A8  
A13  
WE#  
CE2  
A15  
Vcc  
NC  
A16  
A14  
A12  
A7  
1
2
3
4
5
6
7
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
OE#  
A10  
CE#  
DQ7  
DQ6  
DQ5  
DQ4  
DQ3  
Vss  
DQ2  
DQ1  
DQ0  
A0  
5
A6  
6
A5  
7
A9  
8
A4  
A11  
OE#  
A10  
CE#  
DQ7  
DQ6  
DQ5  
DQ4  
DQ3  
8
9
A3  
9
LY651024  
10  
11  
12  
13  
14  
15  
16  
A2  
10  
11  
12  
13  
14  
15  
16  
A1  
A6  
A5  
A4  
A1  
A0  
A2  
A3  
DQ0  
DQ1  
DQ2  
Vss  
TSOP-I/STSOP  
SOJ  
ABSOLUTE MAXIMUN RATINGS*  
PARAMETER  
SYMBOL  
VT1  
RATING  
UNIT  
V
Voltage on VCC relative to VSS  
Voltage on any other pin relative to VSS  
-0.5 to 6.5  
VT2  
-0.5 to VCC+0.5  
0 to 70(C grade)  
-40 to 85(I grade)  
-65 to 150  
V
℃
Operating Temperature  
TA  
℃
W
Storage Temperature  
Power Dissipation  
DC Output Current  
TSTG  
PD  
1
IOUT  
50  
mA  
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating  
only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is not  
implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.  
TRUTH TABLE  
CE#  
H
CE2  
X
OE#  
X
WE#  
X
SUPPLY CURRENT  
MODE  
I/O OPERATION  
High-Z  
ISB,ISB1  
ISB,ISB1  
ICC  
Standby  
High-Z  
X
L
X
X
Output Disable  
Read  
High-Z  
L
H
H
H
DOUT  
ICC  
L
H
L
H
Write  
DIN  
ICC  
L
H
X
L
Note: H = VIH, L = VIL, X = Don't care.  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
2
®
LY651024  
128K X 8 BIT HIGH SPEED CMOS SRAM  
Rev. 1.1  
DC ELECTRICAL CHARACTERISTICS  
SYMBOL TEST CONDITION  
PARAMETER  
MIN.  
4.5  
2.4  
- 0.5  
- 1  
TYP. *4 MAX.  
UNIT  
Supply Voltage  
VCC  
5.0  
5.5  
VCC+0.5  
0.8  
V
V
V
*1  
Input High Voltage  
Input Low Voltage  
Input Leakage Current  
Output Leakage  
Current  
VIH  
-
-
-
*2  
VIL  
ILI  
VCC ≧ VIN ≧ VSS  
1
A
µ
VCC ≧ VOUT ≧ VSS,  
ILO  
- 1  
-
1
A
µ
Output Disabled  
Output High Voltage  
Output Low Voltage  
VOH IOH = -4mA  
VOL IOL = 8mA  
2.4  
-
-
-
-
V
V
0.4  
Cycle time = Min.  
CE# = VIL and CE2 = VIH,  
I/O = 0mA,  
Average Operating  
Power supply Current  
30  
55  
ICC  
-
mA  
I
Others at VIL or VIH  
CE# = VIH or CE2 = VIL  
Others at VIL or VIH  
CE# ≧VCC-0.2V or CE2 0.2V  
Others at 0.2V or VCC-0.2V  
1
2
5
ISB  
-
-
mA  
Standby Power  
Supply Current  
≦
50  
ISB1  
A
µ
Notes:  
1. VIH(max) = VCC + 3.0V for pulse width less than 10ns.  
2. VIL(min) = VSS - 3.0V for pulse width less than 10ns.  
3. Over/Undershoot specifications are characterized, not 100% tested.  
4. Typical values are included for reference only and are not guaranteed or tested.  
℃
Typical valued are measured at VCC = VCC(TYP.) and TA = 25  
CAPACITANCE (TA = 25℃, f = 1.0MHz)  
PARAMETER  
Input Capacitance  
Input/Output Capacitance  
SYMBOL  
MIN.  
-
-
MAX  
6
8
UNIT  
pF  
pF  
CIN  
CI/O  
Note : These parameters are guaranteed by device characterization, but not production tested.  
AC TEST CONDITIONS  
Input Pulse Levels  
0.2V to VCC - 0.2V  
Input Rise and Fall Times  
Input and Output Timing Reference Levels  
Output Load  
3ns  
1.5V  
CL = 30pF + 1TTL, IOH/IOL = -4mA/8mA  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
3
®
LY651024  
128K X 8 BIT HIGH SPEED CMOS SRAM  
Rev. 1.1  
AC ELECTRICAL CHARACTERISTICS  
(1) READ CYCLE  
PARAMETER  
SYM.  
tRC  
UNIT  
LY651024-20  
MIN. MAX.  
20  
Read Cycle Time  
Address Access Time  
Chip Enable Access Time  
Output Enable Access Time  
Chip Enable to Output in Low-Z  
Output Enable to Output in Low-Z  
Chip Disable to Output in High-Z  
Output Disable to Output in High-Z  
Output Hold from Address Change  
-
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tAA  
-
-
-
20  
20  
8
tACE  
tOE  
tCLZ  
tOLZ  
tCHZ  
tOHZ  
tOH  
*
*
*
*
4
0
-
-
-
8
-
8
3
-
(2) WRITE CYCLE  
PARAMETER  
SYM.  
tWC  
tAW  
tCW  
tAS  
UNIT  
LY651024-20  
MIN. MAX.  
20  
Write Cycle Time  
-
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Address Valid to End of Write  
Chip Enable to End of Write  
Address Set-up Time  
Write Pulse Width  
Write Recovery Time  
Data to Write Time Overlap  
Data Hold from End of Write Time  
Output Active from End of Write  
Write to Output in High-Z  
16  
16  
0
-
-
-
tWP  
tWR  
tDW  
tDH  
tOW  
11  
0
-
-
9
-
0
-
*
5
-
tWHZ  
*
-
9
*These parameters are guaranteed by device characterization, but not production tested.  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
4
®
LY651024  
128K X 8 BIT HIGH SPEED CMOS SRAM  
Rev. 1.1  
TIMING WAVEFORMS  
READ CYCLE 1 (Address Controlled) (1,2)  
tRC  
Address  
Dout  
tAA  
tOH  
Previous Data Valid  
Data Valid  
READ CYCLE 2 (CE# and CE2 and OE# Controlled) (1,3,4,5)  
tRC  
Address  
tAA  
CE#  
tACE  
CE2  
OE#  
tOE  
tOLZ  
tOH  
tOHZ  
tCHZ  
tCLZ  
High-Z  
High-Z  
Dout  
Data Valid  
Notes :  
1.WE# is high for read cycle.  
2.Device is continuously selected OE# = low, CE# = low., CE2 = high.  
3.Address must be valid prior to or coincident with CE# = low, CE2 = high; otherwise tAA is the limiting parameter.  
4.tCLZ, tOLZ, tCHZ and tOHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.  
5.At any given temperature and voltage condition, tCHZ is less than tCLZ , tOHZ is less than tOLZ.  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
5
®
LY651024  
128K X 8 BIT HIGH SPEED CMOS SRAM  
Rev. 1.1  
WRITE CYCLE 1 (WE# Controlled) (1,2,3,5,6)  
tWC  
Address  
tAW  
CE#  
tCW  
CE2  
WE#  
Dout  
Din  
tAS  
tWP  
tWR  
tWHZ  
TOW  
High-Z  
(4)  
(4)  
tDW  
tDH  
Data Valid  
WRITE CYCLE 2 (CE# and CE2 Controlled) (1,2,5,6)  
tWC  
Address  
tAW  
CE#  
CE2  
tAS  
tWR  
tCW  
tWP  
WE#  
Dout  
Din  
tWHZ  
High-Z  
(4)  
tDW  
tDH  
Data Valid  
Notes :  
1.WE#, CE# must be high or CE2 must be low during all address transitions.  
2.A write occurs during the overlap of a low CE#, high CE2, low WE#.  
3.During a WE#controlled write cycle with OE# low, tWP must be greater than tWHZ + tDW to allow the drivers to turn off and data to be placed  
on the bus.  
4.During this period, I/O pins are in the output state, and input signals must not be applied.  
5.If the CE#low transition and CE2 high transition occurs simultaneously with or after WE# low transition, the outputs remain in a high  
impedance state.  
6.tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
6
®
LY651024  
128K X 8 BIT HIGH SPEED CMOS SRAM  
Rev. 1.1  
DATA RETENTION CHARACTERISTICS  
PARAMETER  
SYMBOL  
TEST CONDITION  
MIN.  
TYP. MAX. UNIT  
VCC for Data Retention  
VDR CE# ≧ VCC - 0.2V or CE2 ≦ 0.2V  
2.0  
-
5.5  
V
VCC = 2.0V  
Data Retention Current  
IDR  
CE# ≧ VCC - 0.2V or CE2 ≦ 0.2V  
Others at 0.2V or VCC-0.2V  
See Data Retention  
-
0.5  
30  
A
µ
Chip Disable to Data  
Retention Time  
Recovery Time  
tCDR  
tR  
0
-
-
-
-
ns  
ns  
Waveforms (below)  
tRC  
*
tRC = Read Cycle Time  
*
DATA RETENTION WAVEFORM  
Low Vcc Data Retention Waveform (1) (CE# controlled)  
VDR ≧ 2.0V  
Vcc(min.)  
Vcc  
Vcc(min.)  
tCDR  
tR  
VIH  
CE# ≧ Vcc-0.2V  
VIH  
CE#  
Low Vcc Data Retention Waveform (2) (CE2 controlled)  
VDR ≧ 2.0V  
Vcc(min.)  
Vcc  
Vcc(min.)  
tCDR  
tR  
CE2 ≦ 0.2V  
CE2  
VIL  
VIL  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
7
®
LY651024  
128K X 8 BIT HIGH SPEED CMOS SRAM  
Rev. 1.1  
PACKAGE OUTLINE DIMENSION  
32 pin 300mil SOJ Package Outline Dimension  
UNIT  
INCH(BASE)  
0.148(MAX)  
0.025(MIN)  
0.123(MAX)  
0.018(TYP)  
MM(REF)  
SYMBOL  
A
A1  
A2  
B
3.759(MAX)  
0.635(MIN)  
3.124(MAX)  
0.457(TYP)  
±
±
D
0.825 0.005  
20.955 0.127  
E
0.335(TYP)  
8.509(TYP)  
±
±
E1  
e
0.300 0.005  
7.620 0.127  
0.050(TYP)  
1.270(TYP)  
±
±
L
0.086 0.010  
2.184 0.254  
y
0.003(MAX)  
0.076(MAX)  
32 pin 8mm x 20mm TSOP-I Package Outline Dimension  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
8
®
LY651024  
128K X 8 BIT HIGH SPEED CMOS SRAM  
Rev. 1.1  
UNIT  
INCH(BASE)  
0.047 (MAX)  
MM(REF)  
SYM.  
A
A1  
A2  
b
1.20 (MAX)  
±
±
0.004 0.002 0.10 0.05  
±
±
0.039 0.002 1.00 0.05  
±
±
0.009 0.002 0.22 0.05  
c
±
±
0.006 0.002 0.155 0.055  
D
±
±
0.724 0.008 18.40 0.20  
E
±
±
0.315 0.008 8.00 0.20  
e
0.020 (TYP) 0.50 (TYP)  
HD  
L
±
±
0.787 0.008 20.00 0.20  
±
±
0.024 0.004 0.60 0.10  
L1  
y
Θ
±
±
0.0315 0.004 0.08 0.10  
0.003 (MAX) 0.08 (MAX)  
o
o
o
o
～
～
5
0
5
0
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
9
®
LY651024  
128K X 8 BIT HIGH SPEED CMOS SRAM  
Rev. 1.1  
32 pin 8mm x 13.4mm STSOP Package Outline Dimension  
UNIT  
INCH(BASE)  
MM(REF)  
SYM.  
A
A1  
A2  
b
0.049 (MAX)  
1.25 (MAX)  
±
±
0.004 0.002 0.10 0.05  
±
±
0.039 0.002 1.00 0.05  
±
±
0.009 0.002 0.22 0.05  
c
±
±
0.006 0.002 0.155 0.055  
D
±
±
0.465 0.008 11.80 0.20  
E
±
±
0.315 0.008 8.00 0.20  
e
0.020 (TYP) 0.50 (TYP)  
HD  
L
±
±
13.40 0.20.  
±
0.50 0.20  
0.528 0.008  
±
0.02 0.008  
L1  
y
Θ
±
±
0.031 0.005 0.8 0.125  
0.003 (MAX) 0.076 (MAX)  
o
o
o
o
～
～
5
0
5
0
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
10  
®
LY651024  
128K X 8 BIT HIGH SPEED CMOS SRAM  
Rev. 1.1  
ORDERING INFORMATION  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
11  
®
LY651024  
128K X 8 BIT HIGH SPEED CMOS SRAM  
Rev. 1.1  
THIS PAGE IS LEFT BLANK INTENTIONALLY.  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
12  
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