RoHS
RoHS
4PT Series
SEMICONDUCTOR
Sensitive gate SCRs, 4A
Main Features
2
2
Symbol
Value
Unit
IT(RMS)
A
4
2
1
1
3
2
VDRM/VRRM
IGT
V
600 to 800
10 to 200
3
TO-251 (I-PAK)
TO-252 (D-PAK)
µA
(4PTxxF)
(4PTxxG)
2
DESCRIPTION
Thanks to highly sensitive triggering levels, the 4PT
series is suitable for all applications where the
available gate current is limited, such as motor
control for hand tools, kitchen aids, capacitive
discharge ignitions, overvoltage crowbar protection
for low power supplies among others.
1
2
3
1
2
3
TO-220AB (Non-lnsulated)
TO-220AB (lnsulated)
(4PTxxAI)
(4PTxxA)
Available in through-hole or surface-mount packages,
they provide an optimized performance in a limited
space area.
1
2
3
1
2
3
TO-202-3
(4PTxxAT)
2(A)
TO-126 (Non-lnsulated)
(4PTxxAM)
3(G)
1(K)
ABSOLUTE MAXIMUM RATINGS
TEST CONDITIONS
VALUE
UNIT
PARAMETER
SYMBOL
Tc=115°C
TO-251/TO-252/TO-220AB
TO-220AB insulated
TO-126
Tc=110°C
Tc=95°C
Tc=60°C
Tc=115°C
Tc=110°C
Tc=95°C
Tc=60°C
t = 20 ms
t = 16.7 ms
RMS on-state current full sine wave
(180° conduction angle )
IT(RMS)
4
A
A
TO-202-3
TO-251/TO-252/TO-220AB
TO-220AB insulated
TO-126
Average on-state current
(180° conduction angle)
IT(AV)
2.5
TO-202-3
F =50 Hz
30
33
Non repetitive surge peak on-state
ITSM
A
current (full cycle, T initial = 25°C)
j
F =60 Hz
I2t Value for fusing
I2t
A2s
A/µs
tp = 10 ms
4.5
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
F = 60 Hz
dI/dt
Tj = 125ºC
Tj = 125ºC
50
IGM
PG(AV)
VDRM
VRRM
Tstg
Peak gate current
Tp = 20 µs
Tj =125ºC
1.2
0.2
A
Average gate power dissipation
Repetitive peak off-state voltage
W
600 and 800
V
Tj =125ºC
Repetitive peak reverse voltage
Storage temperature range
- 40 to + 150
- 40 to + 125
ºC
Tj
Operating junction temperature range
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