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PYA28C16B-15LMB

型号:

PYA28C16B-15LMB

品牌:

PYRAMID[ PYRAMID SEMICONDUCTOR CORPORATION ]

页数:

10 页

PDF大小:

663 K

PYA28C16B  
2K X 8 EEPROM  
FEATURES  
Access Times of 150, 200, 250 and 350ns  
Single 5V±10% Power Supply  
Endurance:  
- 10,000 Write Cycles  
- 100,000 Write Cycles (optional)  
Byte Write Cycle Time - 10 ms Maximum  
Data Retention: 10 Years  
Available in the following package:  
– 24-Pin 600 mil Ceramic DIP  
– 32-Pin Ceramic LCC (450x550 mils)  
Low Power CMOS:  
- 60 mA Active Current  
- 150 µA Standby Current  
Fast Write Cycle Time - DATA Polling  
CMOS & TTL Compatible Inputs and Outputs  
PIN CONFIGURATIONS  
DESCRIPTION  
The PYA28C16B is a 5 Volt 2Kx8 EEPROM. The PY-  
A28C16B is a 16K memory organized as 2,048 words by  
8 bits. Data Retention is 10 Years. The device is available  
in a 24-Pin 600 mil wide Ceramic DIP and 32-Pin LCC.  
DIP (C12)  
FUNCTIONAL BLOCK DIAGRAM  
LCC (L6)  
Document # EEPROM109 REV OR  
Revised October 2012  
PYA28C16B - 2K x 8 EEPROM  
OPERATION  
MAXIMUM RATINGS(1)  
READ  
Read operations are initiated by both OE and CE LOW.  
The read operation is terminated by either CE or OE re-  
turning HIGH. This two line control architecture elimi-  
nates bus contention in a system environment. The data  
bus will be in a high impedance state when either OE or  
CE is HIGH.  
Sym Parameter  
Value  
Unit  
Power Supply Pin with  
VCC  
-0.3 to +6.25  
V
Respect to GND  
Terminal Voltage with  
VTERM Respect to GND (up to  
6.25V)  
-0.5 to +6.25  
V
BYTE WRITE  
TA  
Operating Temperature  
-55 to +125  
-55 to +125  
-65 to +150  
1.0  
°C  
°C  
°C  
W
Write operations are initiated when both CE and WE are  
LOW and OE is HIGH. The PYA28C16B supports both a  
CE and WE controlled write cycle. That is, the address is  
latched by the falling edge of either CE or WE, whichever  
occurs last. Similarly, the data is latched internally by the  
rising edge of either CE or WE, whichever occurs first. A  
byte write operation, once initiated, will automatically con-  
tinue to completion.  
TBIAS Temperature Under Bias  
TSTG Storage Temperature  
PT  
Power Dissipation  
IOUT DC Output Current  
50  
mA  
RECOMMENDED OPERATING CONDITIONS  
CHIP CLEAR  
Grade(2)  
Ambient Temp  
GND  
VCC  
The contents of the entire memory of the PYA28C16B  
may be set to the high state by the CHIP CLEAR opera-  
tion. By setting CE low and OE to 12 volts, the chip is  
cleared when a 10 msec low pulse is applied to WE.  
Military  
-55°C to +125°C  
0V  
5.0V ± 10%  
CAPACITANCES(4)  
(VCC = 5.0V, TA = 25°C, f = 1.0MHz)  
DEVICE IDENTIFICATION  
An extra 32 bytes of EEPROM memory are available to  
the user for device identification. By raising A9 to 12 ±  
0.5V and using address locations 7E0H to 7FFH the ad-  
ditional bytes may be written to or read from in the same  
manner as the regular memory array.  
Sym Parameter  
Conditions Typ Unit  
CIN  
Input Capacitance  
Output Capacitance  
VIN = 0V  
10  
10  
pF  
pF  
COUT  
VOUT = 0V  
DATA POLLING  
The PYA28C16B features DATA Polling as a method to  
indicate to the host system that the byte write cycle has  
completed. DATA Polling allows a simple bit test opera-  
tion to determine the status of the PYA28C16B, eliminat-  
ing additional interrupts or external hardware. During the  
internal programming cycle, any attempt to read the last  
byte written will produce the complement of that data on  
I/O7 (i.e., write data=0xxx xxxx, read data=1xxx xxxx).  
Once the programming cycle is complete, I/O7 will reflect  
true data.  
Document # EEPROM109 REV OR  
Page 2  
PYA28C16B - 2K x 8 EEPROM  
DC ELECTRICAL CHARACTERISTICS  
(Over Recommended Operating Temperature & Supply Voltage)(2)  
PYA28C16B  
Unit  
Sym Parameter  
Test Conditions  
Min  
Max  
VCC + 0.3  
0.8  
VIH Input High Voltage  
2.0  
V
V
V
V
V
V
VIL Input Low Voltage  
-0.5(3)  
VHC CMOS Input High Voltage  
VLC CMOS Input Low Voltage  
VOL Output Low Voltage (TTL Load)  
VOH Output High Voltage (TTL Load)  
VCC - 0.2 VCC + 0.5  
-0.5(3)  
0.2  
IOL = +2.1 mA, VCC = Min  
IOH = -0.4 mA, VCC = Min  
0.45  
2.4  
-10  
VCC = Max  
ILI  
Input Leakage Current  
+10  
+10  
µA  
µA  
VIN = GND to VCC  
VCC = Max, CE = VIH,  
VOUT = GND to VCC  
CE ≥ VIH, OE = VIL,  
VCC = Max,  
-10  
ILO Output Leakage Current  
ISB Standby Power Supply Current (TTL Input Levels)  
5
mA  
µA  
f = Max, Outputs Open  
CE ≥ VHC,  
VCC = Max,  
ISB1 Standby Power Supply Current (CMOS Input Levels)  
150  
f = 0, Outputs Open,  
VIN ≤ VLC or VIN ≥ VHC  
CE = OE = VIL,  
WE = VIH,  
ICC Supply Current  
60  
mA  
All I/O's = Open,  
Inputs = VCC = 5.5V  
Notes:  
1. Stresses greater than those listed under MAXIMUM RATINGS may  
cause permanent damage to the device. This is a stress rating only  
and functional operation of the device at these or any other conditions  
above those indicated in the operational sections of this specification  
is not implied. Exposure to MAXIMUM rating conditions for extended  
periods may affect reliability.  
2. Extended temperature operation guaranteed with 400 linear feet per  
minute of air flow.  
3.TransientinputswithVIL andIIL notmorenegativethan-3.0Vand-100mA,  
respectively, are permissible for pulse widths up to 20ns.  
4. This parameter is sampled and not 100% tested.  
Document # EEPROM109 REV OR  
Page 3  
PYA28C16B - 2K x 8 EEPROM  
AC ELECTRICAL CHARACTERISTICS—READ CYCLE  
(VCC = 5V ± 10%, All Temperature Ranges)(2)  
-150  
-200  
-250  
-350  
Unit  
Sym Parameter  
Min  
Max  
Min  
Max  
Min  
Max  
Min  
Max  
tAVAV  
Read Cycle Time  
150  
200  
250  
350  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tAVQV Address Access Time  
150  
150  
80  
200  
200  
100  
250  
250  
100  
350  
350  
100  
tELQV Chip Enable Access Time  
tOLQV Output Enable Access Time  
tELQX Chip Enable to Output in Low Z  
tEHQZ Chip Disable to to Output in High Z  
tOLQX Output Enable to Output in Low Z  
tOHQZ Output Disable to Output in High Z  
tAVQX Output Hold from Address Change  
0
0
0
0
0
0
0
0
0
0
0
0
55  
55  
60  
60  
65  
65  
70  
70  
TIMING WAVEFORM OF READ CYCLE  
Document # EEPROM109 REV OR  
Page 4  
PYA28C16B - 2K x 8 EEPROM  
AC CHARACTERISTICS—WRITE CYCLE  
(VCC = 5V ± 10%, All Temperature Ranges)(2)  
150 / 200 / 250 / 350  
Symbol  
Parameter  
Unit  
ms  
ns  
Min  
Max  
tELRH  
tWLRH  
Write Cycle Time  
Address Setup Time  
Address Hold Time  
10  
tAVEL  
tAVWL  
10  
50  
tELAX  
tWLAX  
ns  
tWLEL  
Write Setup Time  
Write Hold Time  
OE Setup Time  
0
0
ns  
ns  
ns  
tWHEH  
tOHEL  
tOHWL  
10  
tWHOL  
tEHOL2  
OE Hold Time  
10  
100  
50  
ns  
ns  
ns  
ns  
tELEH  
tWLWH  
WE Pulse Width  
Data Setup Time  
Data Hold Time  
1000  
tDVEH  
tDVWH  
tEHDX  
tWHDX  
10  
tELWL  
CE Setup Time  
CE Hold Time  
0
0
ns  
ns  
tEHWH  
tEHRL  
tWHRL  
Time to device busy  
50  
ns  
Document # EEPROM109 REV OR  
Page 5  
PYA28C16B - 2K x 8 EEPROM  
TIMING WAVEFORM OF BYTE WRITE CYCLE (CE CONTROLLED)  
TIMING WAVEFORM OF BYTE WRITE CYCLE (WE CONTROLLED)  
Document # EEPROM109 REV OR  
Page 6  
PYA28C16B - 2K x 8 EEPROM  
AC TEST CONDITIONS  
Input Pulse Levels  
TRUTH TABLE  
Mode  
GND to 3.0V  
10ns  
CE  
L
OE  
L
WE  
H
I/O  
DOUT  
DIN  
Input Rise and Fall Times  
Input Timing Reference Level  
Output Timing Reference Level  
Output Load  
Read  
1.5V  
Write  
L
H
L
L
1.5V  
Write Inhibit  
Write Inhibit  
Standby  
X
X
H
X
X
See Figure 1  
X
H
X
X
High Z  
High Z  
Output Disable  
H
X
Figure 1. Output Load  
Document # EEPROM109 REV OR  
Page 7  
PYA28C16B - 2K x 8 EEPROM  
ORDERING INFORMATION  
Document # EEPROM109 REV OR  
Page 8  
PYA28C16B - 2K x 8 EEPROM  
SIDE BRAZED DUAL IN-LINE PACKAGE (600 mils)  
Pkg #  
C12  
# Pins  
24 (600 mil)  
Symbol  
Min  
-
Max  
A
b
0.232  
0.026  
0.065  
0.018  
1.290  
0.610  
0.014  
0.045  
0.008  
-
b2  
C
D
E
0.500  
eA  
e
0.600 BSC  
0.100 BSC  
L
0.125  
0.200  
Q
0.015  
0.005  
0.005  
0.060  
S1  
S2  
-
-
RECTANGULAR LEADLESS CHIP CARRIER  
Pkg #  
# Pins  
Symbol  
A
L6  
32  
Min  
Max  
0.060  
0.050  
0.022  
0.442  
0.075  
0.065  
0.028  
0.458  
A1  
B1  
D
D1  
D2  
D3  
E
0.300 BSC  
0.150 BSC  
-
0.458  
0.560  
0.540  
E1  
E2  
E3  
e
0.400 BSC  
0.200 BSC  
-
0.558  
0.050 BSC  
0.040 REF  
0.020 REF  
h
j
L
0.045  
0.055  
0.055  
0.095  
L1  
0.045  
0.075  
L2  
ND  
NE  
7
9
Document # EEPROM109 REV OR  
Page 9  
PYA28C16B - 2K x 8 EEPROM  
REVISIONS  
DOCUMENT NUMBER EEPROM109  
DOCUMENT TITLE  
PYA28C16B - 2K x 8 EEPROM  
REV ISSUE DATE  
ORIGINATOR DESCRIPTION OF CHANGE  
JDB New Data Sheet  
OR  
Oct 2012  
Document # EEPROM109 REV OR  
Page 10  
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