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LY61L1024JL-18LLIT

型号:

LY61L1024JL-18LLIT

品牌:

LYONTEK[ Lyontek Inc. ]

页数:

17 页

PDF大小:

512 K

®
LY61L1024  
128K X 8 BIT HIGH SPEED CMOS SRAM  
Rev. 2.7  
REVISION HISTORY  
Revision  
Rev. 1.0  
Rev. 1.1  
Rev. 2.0  
Rev. 2.1  
Description  
Initial Issue  
Delete Icc1 Spec.  
Adding -10ns Spec.  
Revised VTERM to VT1 and VT2  
Revised Test Condition of ISB1/IDR  
Added LL Spec.  
Issue Date  
Jul.25.2004  
Sep.21.2004  
Aug.30.2005  
Feb.2.2009  
Rev.2.2  
Revised Test Condition of ICC/ISB  
Feb.2.2009  
FEATURES ORDERING INFORMATION  
Lead  
Revised  
&
free and green package available to Green package available  
Apr.17.2009  
ABSOLUTE MAXIMUN RATINGS  
Deleted TSOLDER in  
ORDERING INFORMATION  
Added packing type in  
Rev. 2.3  
Rev. 2.4  
Dec.18.2009  
Apr.27.2010  
PACKAGE OUTLINE DIMENSION  
Revised  
in page 9  
Added I grade in normal grade  
Deleted -10/12/15ns Spec. in LL grade  
Added -18ns Spec. In LL grade  
May.7.2010  
Aug.30.2010  
Rev. 2.5  
Rev. 2.6  
PACKAGE OUTLINE DIMENSION  
Revised  
Revised  
in page 10/11  
ORDERING INFORMATION  
in page 12  
Rev. 2.7  
Add package type: TFBGA 36 ball  
Revised ORDERING INFORMATION in page 14~page15  
Jan.23.2013  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
0
®
LY61L1024  
128K X 8 BIT HIGH SPEED CMOS SRAM  
Rev. 2.7  
FEATURES  
GENERAL DESCRIPTION  
The LY61L1024 is a 1,048,576-bit low power CMOS  
static random access memory organized as 131,072  
words by 8 bits. It is fabricated using very high  
performance, high reliability CMOS technology. Its  
standby current is stable within the range of  
operating temperature.  
„ Fast access time : 10/12/15/18ns  
„ Low power consumption:  
Operating current : 75/70/65/55mA (TYP.)  
Standby current : 0.6mA (TYP.)  
1μA (TYP.) LL -version  
„ Single 3.3V power supply  
„ All inputs and outputs TTL compatible  
„ Fully static operation  
The LY61L1024 is well designed for very high speed  
system applications, and particularly well suited for  
battery back-up nonvolatile memory application.  
„ Tri-state output  
„ Data retention voltage : 2.0V (MIN.)  
„ Green package available  
„ Package : 32-pin 300 mil SOJ  
32-pin 8mm x 20mm TSOP-I  
32-pin 8mm x 13.4mm STSOP  
36-ball 6mm x 8mm TFBGA  
The LY61L1024 operates from a single power  
supply of 3.3V and all inputs and outputs are fully  
TTL compatible  
PRODUCT FAMILY  
Power Dissipation  
Speed  
Product  
Family  
LY61L1024  
Operating  
Temperature  
0 ~ 70℃  
Vcc Range  
Standby(ISB1,TYP.)  
0.6mA  
Operating(Icc,TYP.)  
75mA  
3.15 ~ 3.6V  
3.0 ~ 3.6V  
3.15 ~ 3.6V  
3.0 ~ 3.6V  
3.0 ~ 3.6V  
3.0 ~ 3.6V  
10ns  
12/15ns  
10ns  
0 ~ 70℃  
-40 ~ 85℃  
-40 ~ 85℃  
0 ~ 70℃  
LY61L1024  
0.6mA  
70/65mA  
75mA  
LY61L1024(I)  
LY61L1024(I)  
LY61L1024(LL)  
LY61L1024(LLI)  
0.6mA  
12/15ns  
18ns  
0.6mA  
70/65mA  
55mA  
1µA  
-40 ~ 85℃  
18ns  
1µA  
55mA  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
1
®
LY61L1024  
128K X 8 BIT HIGH SPEED CMOS SRAM  
Rev. 2.7  
FUNCTIONAL BLOCK DIAGRAM  
PIN DESCRIPTION  
SYMBOL  
DESCRIPTION  
A0 - A16  
Address Inputs  
Vcc  
Vss  
DQ0 – DQ7 Data Inputs/Outputs  
CE#, CE2  
WE#  
OE#  
Chip Enable Inputs  
Write Enable Input  
Output Enable Input  
Power Supply  
128Kx8  
MEMORY ARRAY  
A0-A16  
DECODER  
VCC  
VSS  
Ground  
NC  
No Connection  
I/O DATA  
CIRCUIT  
DQ0-DQ7  
COLUMN I/O  
CE#  
CE2  
WE#  
OE#  
CONTROL  
CIRCUIT  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
2
®
LY61L1024  
128K X 8 BIT HIGH SPEED CMOS SRAM  
Rev. 2.7  
PIN CONFIGURATION  
PS: All pin out definition are relative with “Lyontek logo” orientation.  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
3
®
LY61L1024  
128K X 8 BIT HIGH SPEED CMOS SRAM  
Rev. 2.7  
ABSOLUTE MAXIMUN RATINGS*  
PARAMETER  
SYMBOL  
VT1  
RATING  
-0.5 to 4.6  
-0.5 to VCC+0.5  
0 to 70(C grade)  
-40 to 85(I grade)  
-65 to 150  
1
UNIT  
V
Voltage on VCC relative to VSS  
Voltage on any other pin relative to VSS  
VT2  
V
Operating Temperature  
TA  
W
Storage Temperature  
Power Dissipation  
DC Output Current  
TSTG  
PD  
IOUT  
50  
mA  
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress  
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this  
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.  
TRUTH TABLE  
CE#  
H
CE2  
X
OE#  
X
WE#  
X
SUPPLY CURRENT  
MODE  
I/O OPERATION  
High-Z  
ISB,ISB1  
ISB,ISB1  
ICC  
Standby  
High-Z  
X
L
X
X
Output Disable  
Read  
High-Z  
L
H
H
H
DOUT  
ICC  
L
H
L
H
Write  
DIN  
ICC  
L
H
X
L
Note: H = VIH, L = VIL, X = Don't care.  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
4
®
LY61L1024  
128K X 8 BIT HIGH SPEED CMOS SRAM  
Rev. 2.7  
DC ELECTRICAL CHARACTERISTICS  
SYMBOL  
TEST CONDITION  
MIN.  
3.0  
2.0  
- 0.5  
- 1  
TYP. *4 MAX.  
UNIT  
PARAMETER  
Supply Voltage  
VCC  
3.3  
3.6  
VCC+0.5  
0.6  
V
V
V
*1  
Input High Voltage  
Input Low Voltage  
Input Leakage Current  
Output Leakage  
Current  
VIH  
VIL  
-
-
-
*2  
ILI  
V
V
CC VIN VSS  
CC VOUT VSS,  
Output Disabled  
1
A
µ
ILO  
- 1  
-
1
A
µ
Output High Voltage  
Output Low Voltage  
VOH IOH = -4mA  
VOL IOL = 8mA  
Cycle time = Min.  
CE# = VIL and CE2 = VIH,  
I/O = 0mA  
2.2  
-
-
75  
70  
65  
55  
-
V
V
mA  
mA  
mA  
mA  
-
-
-
-
-
0.4  
120  
100  
90  
-10  
-12  
-15  
-18  
Average Operating  
Power supply Current  
ICC  
I
Others at VIL or VIH  
80  
CE# = VIH or CE2 = VIL  
Others at VIL or VIH  
CE# VCC-0.2V  
ISB  
-
-
3
20  
3
mA  
mA  
Normal  
LL  
0.6  
Standby Power  
Supply Current  
or CE2 0.2V  
ISB1  
CE# VCC-0.2V  
-
1
30  
A
µ
or CE2 0.2V  
Others at 0.2V or VCC-0.2V  
Notes:  
1. VIH(max) = VCC + 3.0V for pulse width less than 10ns.  
2. VIL(min) = VSS - 3.0V for pulse width less than 10ns.  
3. Over/Undershoot specifications are characterized, not 100% tested.  
4. Typical values are included for reference only and are not guaranteed or tested.  
Typical valued are measured at VCC = VCC(TYP.) and TA = 25  
CAPACITANCE (TA = 25, f = 1.0MHz)  
PARAMETER  
Input Capacitance  
Input/Output Capacitance  
SYMBOL  
CIN  
MIN.  
-
-
MAX  
6
8
UNIT  
pF  
pF  
CI/O  
Note : These parameters are guaranteed by device characterization, but not production tested.  
AC TEST CONDITIONS  
Input Pulse Levels  
0.2V to VCC - 0.2V  
Input Rise and Fall Times  
Input and Output Timing Reference Levels  
Output Load  
3ns  
1.5V  
CL = 30pF + 1TTL, IOH/IOL = -4mA/8mA  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
5
®
LY61L1024  
128K X 8 BIT HIGH SPEED CMOS SRAM  
Rev. 2.7  
AC ELECTRICAL CHARACTERISTICS  
(1) READ CYCLE  
PARAMETER  
SYM. LY61L1024-10 LY61L1024-12 LY61L1024-15 LY61L1024-18 UNIT  
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.  
Read Cycle Time  
Address Access Time  
Chip Enable Access Time  
Output Enable Access Time  
Chip Enable to Output in Low-Z  
Output Enable to Output in Low-Z tOLZ  
Chip Disable to Output in High-Z tCHZ  
Output Disable to Output in High-Z tOHZ  
Output Hold from Address Change tOH  
tRC  
tAA  
tACE  
tOE  
tCLZ  
10  
-
-
-
10  
10  
5
-
-
5
5
-
12  
-
-
-
12  
12  
6
-
-
6
6
-
15  
-
-
-
15  
15  
7
-
-
7
7
-
18  
-
-
-
18  
18  
8
-
-
8
8
-
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
-
-
-
-
*
*
*
*
2
0
-
-
3
3
0
-
-
3
4
0
-
-
3
4
0
-
-
3
(2) WRITE CYCLE  
PARAMETER  
SYM. LY61L1024-10 LY61L1024-12 LY61L1024-15 LY61L1024-18 UNIT  
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.  
Write Cycle Time  
tWC  
tAW  
tCW  
tAS  
tWP  
tWR  
tDW  
10  
8
8
0
8
0
6
0
2
-
-
-
-
-
-
-
-
-
-
6
12  
10  
10  
0
9
0
7
0
3
-
-
-
-
-
-
-
-
-
-
7
15  
12  
12  
0
10  
0
8
0
4
-
-
-
-
-
-
-
-
-
-
8
18  
16  
16  
0
11  
0
9
0
5
-
-
-
-
-
-
-
-
-
-
9
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Address Valid to End of Write  
Chip Enable to End of Write  
Address Set-up Time  
Write Pulse Width  
Write Recovery Time  
Data to Write Time Overlap  
Data Hold from End of Write Time tDH  
Output Active from End of Write  
Write to Output in High-Z  
tOW  
tWHZ  
*
*
*These parameters are guaranteed by device characterization, but not production tested.  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
6
®
LY61L1024  
128K X 8 BIT HIGH SPEED CMOS SRAM  
Rev. 2.7  
TIMING WAVEFORMS  
READ CYCLE 1 (Address Controlled) (1,2)  
tRC  
Address  
Dout  
tAA  
tOH  
Previous Data Valid  
Data Valid  
READ CYCLE 2 (CE# and CE2 and OE# Controlled) (1,3,4,5)  
tRC  
Address  
tAA  
CE#  
tACE  
CE2  
OE#  
tOE  
tOLZ  
tOH  
tOHZ  
tCHZ  
tCLZ  
High-Z  
High-Z  
Dout  
Data Valid  
Notes :  
1.WE# is high for read cycle.  
2.Device is continuously selected OE# = low, CE# = low., CE2 = high.  
3.Address must be valid prior to or coincident with CE# = low, CE2 = high; otherwise tAA is the limiting parameter.  
4.tCLZ, tOLZ, tCHZ and tOHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.  
5.At any given temperature and voltage condition, tCHZ is less than tCLZ , tOHZ is less than tOLZ.  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
7
®
LY61L1024  
128K X 8 BIT HIGH SPEED CMOS SRAM  
Rev. 2.7  
WRITE CYCLE 1 (WE# Controlled) (1,2,3,5,6)  
tWC  
Address  
tAW  
CE#  
tCW  
CE2  
WE#  
Dout  
Din  
tAS  
tWP  
tWR  
tWHZ  
TOW  
High-Z  
(4)  
(4)  
tDW  
tDH  
Data Valid  
WRITE CYCLE 2 (CE# and CE2 Controlled) (1,2,5,6)  
tWC  
Address  
tAW  
CE#  
CE2  
tAS  
tWR  
tCW  
tWP  
WE#  
Dout  
Din  
tWHZ  
High-Z  
(4)  
tDW  
tDH  
Data Valid  
Notes :  
1.WE#, CE# must be high or CE2 must be low during all address transitions.  
2.A write occurs during the overlap of a low CE#, high CE2, low WE#.  
3.During a WE#controlled write cycle with OE# low, tWP must be greater than tWHZ + tDW to allow the drivers to turn off and data to be  
placed on the bus.  
4.During this period, I/O pins are in the output state, and input signals must not be applied.  
5.If the CE#low transition and CE2 high transition occurs simultaneously with or after WE# low transition, the outputs remain in a high  
impedance state.  
6.tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
8
®
LY61L1024  
128K X 8 BIT HIGH SPEED CMOS SRAM  
Rev. 2.7  
DATA RETENTION CHARACTERISTICS  
PARAMETER  
SYMBOL  
TEST CONDITION  
CE# VCC - 0.2V  
or CE2 0.2V  
MIN.  
TYP. MAX. UNIT  
VCC for Data Retention  
VDR  
2.0  
-
3.6  
V
VCC = 2.0V  
CE# VCC - 0.2V  
or CE2 0.2V  
VCC = 2.0V  
CE# VCC - 0.2V  
or CE2 0.2V  
Normal  
LL  
-
0.006  
2
mA  
Data Retention Current  
IDR  
-
0.5  
30  
A
µ
others at 0.2V or VCC-0.2V  
See Data Retention  
Waveforms (below)  
Chip Disable to Data  
Retention Time  
Recovery Time  
tCDR  
tR  
0
-
-
-
-
ns  
ns  
tRC  
*
tRC = Read Cycle Time  
*
DATA RETENTION WAVEFORM  
Low Vcc Data Retention Waveform (1) (CE# controlled)  
VDR 2.0V  
Vcc(min.)  
Vcc  
Vcc(min.)  
tCDR  
tR  
VIH  
CE# Vcc-0.2V  
VIH  
CE#  
Low Vcc Data Retention Waveform (2) (CE2 controlled)  
VDR 2.0V  
Vcc(min.)  
Vcc  
Vcc(min.)  
tCDR  
tR  
CE2 0.2V  
CE2  
VIL  
VIL  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
9
®
LY61L1024  
128K X 8 BIT HIGH SPEED CMOS SRAM  
Rev. 2.7  
PACKAGE OUTLINE DIMENSION  
32 pin 300mil SOJ Package Outline Dimension  
UNIT  
INCH(BASE)  
0.148(MAX)  
0.025(MIN)  
0.123(MAX)  
0.018(TYP)  
MM(REF)  
SYMBOL  
A
A1  
A2  
B
3.759(MAX)  
0.635(MIN)  
3.124(MAX)  
0.457(TYP)  
±
±
D
0.825 0.005  
20.955 0.127  
E
0.335(TYP)  
8.509(TYP)  
±
±
E1  
e
0.300 0.005  
7.620 0.127  
0.050(TYP)  
1.270(TYP)  
±
±
L
0.086 0.010  
2.184 0.254  
y
0.003(MAX)  
0.076(MAX)  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
10  
®
LY61L1024  
128K X 8 BIT HIGH SPEED CMOS SRAM  
Rev. 2.7  
32 pin 8mm x 20mm TSOP-I Package Outline Dimension  
UNIT  
INCH(BASE)  
MM(REF)  
SYM.  
A
A1  
A2  
b
0.047 (MAX)  
1.20 (MAX)  
±
±
0.004 0.002 0.10 0.05  
±
±
0.039 0.002 1.00 0.05  
±
±
0.009 0.002 0.22 0.05  
c
±
±
0.006 0.002 0.155 0.055  
D
±
±
0.724 0.008 18.40 0.20  
E
±
±
0.315 0.008 8.00 0.20  
e
0.020 (TYP) 0.50 (TYP)  
HD  
L
±
±
0.787 0.008 20.00 0.20  
±
±
0.024 0.004 0.60 0.10  
L1  
y
Θ
±
±
0.0315 0.004 0.08 0.10  
0.003 (MAX) 0.08 (MAX)  
o
o
o
o
5
0
5
0
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
11  
®
LY61L1024  
128K X 8 BIT HIGH SPEED CMOS SRAM  
Rev. 2.7  
32 pin 8mm x 13.4mm STSOP Package Outline Dimension  
UNIT  
INCH(BASE)  
MM(REF)  
SYM.  
A
A1  
A2  
b
0.049 (MAX)  
1.25 (MAX)  
±
±
0.004 0.002 0.10 0.05  
±
±
0.039 0.002 1.00 0.05  
±
±
0.009 0.002 0.22 0.05  
c
±
±
0.006 0.002 0.155 0.055  
D
±
±
0.465 0.008 11.80 0.20  
E
±
±
0.315 0.008 8.00 0.20  
e
0.020 (TYP) 0.50 (TYP)  
HD  
L
±
±
13.40 0.20.  
±
0.50 0.20  
0.528 0.008  
±
0.02 0.008  
L1  
y
Θ
±
±
0.031 0.005 0.8 0.125  
0.003 (MAX) 0.076 (MAX)  
o
o
o
o
5
0
5
0
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
12  
®
LY61L1024  
128K X 8 BIT HIGH SPEED CMOS SRAM  
Rev. 2.7  
36 ball 6mm × 8mm TFBGA Package Outline Dimension  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
13  
®
LY61L1024  
128K X 8 BIT HIGH SPEED CMOS SRAM  
Rev. 2.7  
ORDERING INFORMATION  
Package Type  
Access Time  
Power Type  
Temperature  
Packing  
Type  
Lyontek Item No.  
(Speed)(ns)  
Range()  
32-pin 300mil SOJ  
10  
Ultra Low Power  
Tube  
LY61L1024JL-10  
0
~70  
Tape Reel  
Tube  
LY61L1024JL-10T  
LY61L1024JL-10I  
LY61L1024JL-10IT  
LY61L1024JL-12  
LY61L1024JL-12T  
-40 ~85  
Tape Reel  
Tube  
12  
Ultra Low Power  
~70  
0
Tape Reel  
Tube  
LY61L1024JL-12I  
LY61L1024JL-12IT  
LY61L1024JL-15  
LY61L1024JL-15T  
LY61L1024JL-15I  
LY61L1024JL-15IT  
LY61L1024JL-18LL  
LY61L1024JL-18LLT  
-40 ~85  
Tape Reel  
Tube  
15  
18  
Ultra Low Power  
Ultra Low Power  
~70  
0
Tape Reel  
Tube  
-40 ~85  
Tape Reel  
Tube  
~70  
0
Tape Reel  
Tube  
LY61L1024JL-18LLI  
LY61L1024JL-18LLIT  
-40 ~85  
Tape Reel  
32-pin 8mmx20mm  
TSOP-I  
10  
12  
15  
18  
Ultra Low Power  
Ultra Low Power  
Ultra Low Power  
Ultra Low Power  
Tube  
LY61L1024LL-10  
LY61L1024LL-10T  
LY61L1024LL-10I  
LY61L1024LL-10IT  
LY61L1024LL-12  
LY61L1024LL-12T  
LY61L1024LL-12I  
LY61L1024LL-12IT  
LY61L1024LL-15  
LY61L1024LL-15T  
LY61L1024LL-15I  
LY61L1024LL-15IT  
LY61L1024LL-18LL  
LY61L1024LL-18LLT  
LY61L1024LL-18LLI  
LY61L1024LL-18LLIT  
~70  
0
Tape Reel  
Tube  
-40 ~85  
Tape Reel  
Tube  
0
~70  
Tape Reel  
Tube  
-40 ~85  
Tape Reel  
Tube  
0
~70  
Tape Reel  
Tube  
-40 ~85  
Tape Reel  
Tube  
0
~70  
Tape Reel  
Tube  
-40 ~85  
Tape Reel  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
14  
®
LY61L1024  
128K X 8 BIT HIGH SPEED CMOS SRAM  
Rev. 2.7  
Package Type  
Access Time  
(Speed)(ns)  
Power Type  
Temperature  
Packing  
Type  
Lyontek Item No.  
Range()  
32-pin 8mmx13.4mm  
STSOP  
10  
Ultra Low Power  
Tube  
LY61L1024RL-10  
LY61L1024RL-10T  
LY61L1024RL-10I  
LY61L1024RL-10IT  
LY61L1024RL-12  
LY61L1024RL-12T  
~70  
0
Tape Reel  
Tube  
-40 ~85  
Tape Reel  
Tube  
12  
Ultra Low Power  
0
~70  
Tape Reel  
Tube  
LY61L1024RL-12I  
LY61L1024RL-12IT  
LY61L1024RL-15  
LY61L1024RL-15T  
LY61L1024RL-15I  
LY61L1024RL-15IT  
LY61L1024RL-18LL  
LY61L1024RL-18LLT  
-40 ~85  
Tape Reel  
Tube  
15  
18  
Ultra Low Power  
Ultra Low Power  
~70  
0
Tape Reel  
Tube  
-40 ~85  
Tape Reel  
Tube  
~70  
0
Tape Reel  
Tube  
LY61L1024RL-18LLI  
LY61L1024RL-18LLIT  
-40 ~85  
Tape Reel  
36-ball 6mmx8mm  
TFBGA  
10  
Ultra Low Power  
Tube  
LY61L1024GL-10  
LY61L1024GL-10T  
LY61L1024GL-10I  
LY61L1024GL-10IT  
~70  
0
Tape Reel  
Tube  
-40 ~85  
Tape Reel  
12  
15  
18  
Ultra Low Power  
Ultra Low Power  
Ultra Low Power  
Tube  
LY61L1024GL-12  
~70  
0
Tape Reel  
Tube  
LY61L1024GL-12T  
LY61L1024GL-12I  
LY61L1024GL-12IT  
LY61L1024GL-15  
-40 ~85  
Tape Reel  
Tube  
0
~70  
Tape Reel  
Tube  
LY61L1024GL-15T  
LY61L1024GL-15I  
LY61L1024GL-15IT  
LY61L1024GL-18LL  
LY61L1024GL-18LLT  
LY61L1024GL-18LLI  
LY61L1024GL-18LLIT  
-40 ~85  
Tape Reel  
Tube  
0
~70  
Tape Reel  
Tube  
-40 ~85  
Tape Reel  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
15  
®
LY61L1024  
128K X 8 BIT HIGH SPEED CMOS SRAM  
Rev. 2.7  
THIS PAGE IS LEFT BLANK INTENTIONALLY.  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
16  
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