请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

LY62L6416ML-70SLIT

型号：

LY62L6416ML-70SLIT

品牌：

LYONTEK[ Lyontek Inc. ]

页数：

15 页

PDF大小：

695 K

下载PDF手册
LY62L6416  
64K X 16 BIT LOW POWER CMOS SRAM  
Rev. 1.6  
REVISION HISTORY  
Revision  
Rev. 1.0  
Rev. 1.1  
Rev. 1.2  
Description  
Initial Issue  
Revised Package Outline Dimension(TSOP-II)  
Issue Date  
Jul.25.2004  
Apr.12.2007  
Mar.30.2009  
℃
℃
Added ISB1/IDR values when TA = 25 and TA = 40  
Added SL grade  
Deleted L grade  
FEATURES ORDERING INFORMATION  
Revised  
&
Lead free and green package available to Green package  
available  
ORDERING INFORMATION  
Added packing type in  
Revised VTERM to VT1 and VT2  
ABSOLUTE MAXIMUN RATINGS  
Deleted TSOLDER in  
Rev. 1.3  
Rev. 1.4  
Rev. 1.5  
Rev. 1.6  
May.6.2010  
Aug.30.2010  
May.20.2016  
Jun.29.2016  
PACKAGE OUTLINE DIMENSION  
Revised  
Revised  
Correct  
in page 10  
ORDERING INFORMATION  
ORDERING INFORMATION  
in page 11  
Typo.  
Deleted WRITE CYCLE  
Notes :  
in page 8  
1.WE#, CE# must be high during all address transitions  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
0
LY62L6416  
64K X 16 BIT LOW POWER CMOS SRAM  
Rev. 1.6  
FEATURES  
GENERAL DESCRIPTION  
The LY62L6416 is a 1,048,576-bit low power CMOS  
static random access memory organized as 65,536  
words by 16 bits. It is fabricated using very high  
performance, high reliability CMOS technology. Its  
standby current is stable within the range of operating  
temperature.  
Fast access time : 45/55/70ns  
Low power consumption:  
Operating current : 23/20/18mA (TYP.)  
Standby current : 1A (TYP.) LL/SL -version  
Single 2.7V ~ 3.6V power supply  
All inputs and outputs TTL compatible  
Fully static operation  
The LY62L6416 is well designed for low power  
application, and particularly well suited for battery  
back-up nonvolatile memory application.  
Tri-state output  
Data byte control : LB# (DQ0 ~ DQ7)  
UB# (DQ8 ~ DQ15)  
Data retention voltage : 1.5V (MIN.)  
Green package available  
Package : 44-pin 400 mil TSOP II  
48-ball 6mm x 8mm TFBGA  
The LY62L6416 operates from a single power  
supply of 2.7V ~ 3.6V and all inputs and outputs are  
fully TTL compatible  
PRODUCT FAMILY  
Power Dissipation  
Speed  
Product  
Family  
LY62L6416  
Operating  
Temperature  
0 ~ 70℃  
Vcc Range  
Standby(ISB1,TYP.) Operating(Icc,TYP.)  
2.7 ~ 3.6V  
2.7 ~ 3.6V  
2.7 ~ 3.6V  
45/55/70ns  
45/55/70ns  
45/55/70ns  
1µA  
1µA  
1µA  
23/20/18mA  
23/20/18mA  
23/20/18mA  
-20 ~ 80℃  
-40 ~ 85℃  
LY62L6416(E)  
LY62L6416(I)  
FUNCTIONAL BLOCK DIAGRAM  
PIN DESCRIPTION  
SYMBOL  
DESCRIPTION  
Address Inputs  
Vcc  
Vss  
A0 - A15  
DQ0 – DQ15 Data Inputs/Outputs  
64Kx16  
MEMORY ARRAY  
A0-A15  
DECODER  
CE#  
WE#  
OE#  
LB#  
UB#  
VCC  
Chip Enable Input  
Write Enable Input  
Output Enable Input  
Lower Byte Control  
Upper Byte Control  
Power Supply  
DQ0-DQ7  
Lower Byte  
I/O DATA  
CIRCUIT  
COLUMN I/O  
VSS  
Ground  
DQ8-DQ15  
Upper Byte  
CE#  
WE#  
OE#  
LB#  
CONTROL  
CIRCUIT  
UB#  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
1
LY62L6416  
64K X 16 BIT LOW POWER CMOS SRAM  
Rev. 1.6  
PIN CONFIGURATION  
A4  
A3  
1
2
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
A5  
A6  
A2  
3
A7  
A1  
4
OE#  
UB#  
LB#  
DQ15  
DQ14  
DQ13  
DQ12  
Vss  
A0  
5
CE#  
DQ0  
DQ1  
DQ2  
DQ3  
Vcc  
Vss  
DQ4  
DQ5  
DQ6  
DQ7  
WE#  
A15  
A14  
A13  
A12  
NC  
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
Vcc  
DQ11  
DQ10  
DQ9  
DQ8  
NC  
A8  
A9  
A10  
A11  
NC  
TSOP II  
LB# OE# A0  
DQ8 UB# A3  
DQ9 DQ10 A5  
Vss DQ11 NC  
A1  
A2  
NC  
A
B
C
D
E
F
A4 CE# DQ0  
A6 DQ1 DQ2  
A7 DQ3 Vcc  
Vcc DQ12 NC NC DQ4 Vss  
DQ14 DQ13 A14 A15 DQ5 DQ6  
DQ15 NC A12 A13 WE# DQ7  
G
H
NC  
A8  
A9 A10 A11 NC  
TFBGA(Top View)  
1
2
3
4
5
6
TFBGA(See through with Top View)  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
2
LY62L6416  
64K X 16 BIT LOW POWER CMOS SRAM  
Rev. 1.6  
ABSOLUTE MAXIMUN RATINGS*  
PARAMETER  
SYMBOL  
VT1  
RATING  
-0.5 to 4.6  
UNIT  
V
Voltage on VCC relative to VSS  
Voltage on any other pin relative to VSS  
VT2  
-0.5 to VCC+0.5  
0 to 70(C grade)  
-20 to 80(E grade)  
-40 to 85(I grade)  
-65 to 150  
V
℃
Operating Temperature  
TA  
℃
W
Storage Temperature  
Power Dissipation  
DC Output Current  
TSTG  
PD  
1
IOUT  
50  
mA  
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating  
only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is  
not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.  
TRUTH TABLE  
I/O OPERATION  
MODE  
Standby  
CE# OE# WE# LB# UB#  
SUPPLY CURRENT  
DQ0-DQ7  
DQ8-DQ15  
H
X
X
X
X
X
X
H
X
H
High – Z  
High – Z  
High – Z  
High – Z  
ISB,ISB1  
ICC,ICC1  
ICC,ICC1  
L
L
L
L
L
L
L
L
H
H
L
L
L
X
X
X
H
H
H
H
H
L
L
X
L
H
L
L
H
L
X
L
H
L
L
H
L
High – Z  
High – Z  
DOUT  
High – Z  
DOUT  
High – Z  
High – Z  
High – Z  
DOUT  
Output Disable  
Read  
DOUT  
DIN  
High – Z  
DIN  
High – Z  
DIN  
Write  
L
L
ICC,ICC1  
L
DIN  
Note: H = VIH, L = VIL, X = Don't care.  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
3
LY62L6416  
64K X 16 BIT LOW POWER CMOS SRAM  
Rev. 1.6  
DC ELECTRICAL CHARACTERISTICS  
SYMBOL  
TEST CONDITION  
MIN.  
2.7  
2.2  
- 0.2  
- 1  
TYP. *4  
3.0  
MAX.  
3.6  
VCC+0.3  
0.6  
UNIT  
PARAMETER  
Supply Voltage  
VCC  
V
V
V
*1  
Input High Voltage  
Input Low Voltage  
Input Leakage Current  
Output Leakage  
Current  
VIH  
VIL  
-
-
-
*2  
ILI  
V
V
CC ≧ VIN ≧ VSS  
CC ≧ VOUT ≧ VSS,  
Output Disabled  
IOL = 2mA  
Cycle time = Min.  
CE# = VIL , II/O = 0mA  
Other pins at VIL or VIH  
1
A
µ
ILO  
- 1  
-
1
A
µ
Output High Voltage  
Output Low Voltage  
VOH IOH = -1mA  
VOL  
2.2  
2.7  
-
23  
20  
18  
-
V
V
mA  
mA  
mA  
-
-
-
-
0.4  
40  
35  
30  
- 45  
- 55  
- 70  
ICC  
Average Operating  
Power supply Current  
Cycle time = 1 s  
µ
ICC1  
ISB  
-
4
5
mA  
CE# = 0.2V , II/O = 0mA  
Other pins at 0.2V or VCC - 0.2V  
CE# = VIH, other pins at VIL or VIH  
-
-
-
0.3  
1
1
0.5  
10  
20  
mA  
LL  
LLE/LLI  
A
A
µ
µ
SL*5  
Standby Power  
Supply Current  
CE# ≧VCC - 0.2V  
Others at 0.2V or  
VCC - 0.2V  
℃
℃
-
-
1
1
3
3
A
A
25  
µ
µ
ISB1  
SLE*5  
SLI*5  
40  
SL  
SLE/SLI  
-
-
1
1
10  
15  
A
A
µ
µ
Notes:  
1. VIH(max) = VCC + 3.0V for pulse width less than 10ns.  
2. VIL(min) = VSS - 3.0V for pulse width less than 10ns.  
3. Over/Undershoot specifications are characterized, not 100% tested.  
4. Typical values are included for reference only and are not guaranteed or tested.  
℃
Typical values are measured at VCC = VCC(TYP.) and TA = 25  
5. This parameter is measured at VCC = 3.0V  
CAPACITANCE (TA = 25℃, f = 1.0MHz)  
PARAMETER  
Input Capacitance  
Input/Output Capacitance  
SYMBOL  
MIN.  
-
-
MAX  
6
8
UNIT  
pF  
pF  
CIN  
CI/O  
Note : These parameters are guaranteed by device characterization, but not production tested.  
AC TEST CONDITIONS  
Input Pulse Levels  
0.2V to VCC - 0.2V  
Input Rise and Fall Times  
Input and Output Timing Reference Levels  
Output Load  
3ns  
1.5V  
CL = 30pF + 1TTL, IOH/IOL = -1mA/2mA  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
4
LY62L6416  
64K X 16 BIT LOW POWER CMOS SRAM  
Rev. 1.6  
AC ELECTRICAL CHARACTERISTICS  
(1) READ CYCLE  
PARAMETER  
SYM.  
tRC  
UNIT  
LY62L6416-45 LY62L6416-55 LY62L6416-70  
MIN.  
MAX.  
MIN.  
MAX.  
MIN.  
MAX.  
Read Cycle Time  
Address Access Time  
Chip Enable Access Time  
Output Enable Access Time  
Chip Enable to Output in Low-Z  
Output Enable to Output in Low-Z  
Chip Disable to Output in High-Z  
Output Disable to Output in High-Z tOHZ  
Output Hold from Address Change  
LB#, UB# Access Time  
45  
-
-
-
55  
-
-
-
70  
-
-
-
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tAA  
45  
45  
25  
-
55  
55  
30  
-
70  
70  
35  
-
tACE  
tOE  
tCLZ  
tOLZ  
tCHZ  
-
-
-
*
*
*
10  
5
-
-
10  
-
10  
5
-
-
10  
-
10  
5
-
-
10  
-
-
-
-
15  
15  
-
45  
20  
-
20  
20  
-
55  
25  
-
25  
25  
-
70  
30  
-
*
tOH  
tBA  
LB#, UB# to High-Z Output  
LB#, UB# to Low-Z Output  
tBHZ  
*
-
10  
-
10  
-
10  
tBLZ  
*
(2) WRITE CYCLE  
PARAMETER  
SYM.  
tWC  
tAW  
tCW  
tAS  
UNIT  
LY62L6416-45 LY62L6416-55 LY62L6416-70  
MIN.  
45  
40  
40  
0
MAX.  
MIN.  
55  
50  
50  
0
MAX.  
MIN.  
70  
60  
60  
0
MAX.  
Write Cycle Time  
-
-
-
-
-
-
-
-
-
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Address Valid to End of Write  
Chip Enable to End of Write  
Address Set-up Time  
Write Pulse Width  
Write Recovery Time  
Data to Write Time Overlap  
Data Hold from End of Write Time  
Output Active from End of Write  
Write to Output in High-Z  
LB#, UB# Valid to End of Write  
-
-
-
tWP  
tWR  
tDW  
tDH  
tOW  
35  
0
-
-
45  
0
-
-
55  
0
-
-
20  
0
-
-
25  
0
-
-
30  
0
-
-
*
5
-
5
-
5
-
tWHZ  
*
-
35  
15  
-
-
45  
20  
-
-
60  
25  
-
tBW  
*These parameters are guaranteed by device characterization, but not production tested.  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
5
LY62L6416  
64K X 16 BIT LOW POWER CMOS SRAM  
Rev. 1.6  
TIMING WAVEFORMS  
READ CYCLE 1 (Address Controlled) (1,2)  
tRC  
Address  
Dout  
tAA  
tOH  
Previous Data Valid  
Data Valid  
READ CYCLE 2 (CE# and OE# Controlled) (1,3,4,5)  
tRC  
Address  
tAA  
CE#  
tACE  
LB#,UB#  
tBA  
OE#  
tOE  
tOH  
tOLZ  
tBLZ  
tCLZ  
tOHZ  
tBHZ  
tCHZ  
High-Z  
Dout  
High-Z  
Data Valid  
Notes :  
1.WE#is high for read cycle.  
2.Device is continuously selected OE# = low, CE# = low, LB# or UB# = low.  
3.Address must be valid prior to or coincident with CE# = low, LB# or UB# = low transition; otherwise tAA is the limiting parameter.  
4.tCLZ, tBLZ, tOLZ, tCHZ, tBHZ and tOHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.  
5.At any given temperature and voltage condition, tCHZ is less than tCLZ , tBHZ is less than tBLZ, tOHZ is less than tOLZ.  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
6
LY62L6416  
64K X 16 BIT LOW POWER CMOS SRAM  
Rev. 1.6  
WRITE CYCLE 1 (WE# Controlled) (1,2,4,5)  
tWC  
Address  
tAW  
CE#  
tCW  
tBW  
LB#,UB#  
WE#  
tAS  
tWP  
tWR  
tOW  
tWHZ  
High-Z  
(4)  
Dout  
(4)  
tDW  
tDH  
Din  
Data Valid  
WRITE CYCLE 2 (CE# Controlled) (1,4,5)  
tWC  
Address  
tAW  
CE#  
tAS  
tWR  
tCW  
tBW  
LB#,UB#  
tWP  
WE#  
Dout  
Din  
tWHZ  
High-Z  
(4)  
tDW  
tDH  
Data Valid  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
7
LY62L6416  
64K X 16 BIT LOW POWER CMOS SRAM  
Rev. 1.6  
WRITE CYCLE 3 (LB#,UB# Controlled)  
(1,4,5)  
tWC  
Address  
tAW  
tWR  
CE#  
tAS  
tCW  
tBW  
LB#,UB#  
WE#  
tWP  
tWHZ  
High-Z  
Dout  
Din  
(4)  
tDW  
tDH  
Data Valid  
Notes :  
1.A write occurs during the overlap of a low CE#, low WE#, LB# or UB# = low.  
2.During a WE# controlled write cycle with OE# low, tWP must be greater than tWHZ + tDW to allow the drivers to turn off and data to be placed  
on the bus.  
3.During this period, I/O pins are in the output state, and input signals must not be applied.  
4.If the CE#, LB#, UB# low transition occurs simultaneously with or after WE# low transition, the outputs remain in a high impedance state.  
5.tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
8
LY62L6416  
64K X 16 BIT LOW POWER CMOS SRAM  
Rev. 1.6  
DATA RETENTION CHARACTERISTICS  
PARAMETER  
for Data Retention  
SYMBOL  
TEST CONDITION  
CE# ≧ VCC - 0.2V  
MIN.  
1.5  
-
-
TYP. MAX. UNIT  
V
CC  
VDR  
-
3.6  
5
10  
V
LL  
LLE/LLI  
SL  
SLE  
SLI  
SL  
0.5  
0.5  
A
µ
µ
A
VCC = 1.5V  
CE# ≧ VCC - 0.2V  
Others at 0.2V or VCC-0.2V  
℃
-
-
0.5  
0.5  
3
3
A
25  
µ
µ
Data Retention Current  
IDR  
℃
40  
A
-
-
0.5  
0.5  
5
10  
A
A
µ
µ
SLE/SLI  
Chip Disable to Data  
Retention Time  
Recovery Time  
See Data Retention  
Waveforms (below)  
tCDR  
tR  
0
-
-
-
-
ns  
ns  
tRC  
*
tRC = Read Cycle Time  
*
DATA RETENTION WAVEFORM  
Low Vcc Data Retention Waveform (1) (CE# controlled)  
VDR ≧ 1.5V  
Vcc(min.)  
Vcc  
Vcc(min.)  
tCDR  
tR  
VIH  
CE# ≧ Vcc-0.2V  
VIH  
CE#  
Low Vcc Data Retention Waveform (2) (LB#, UB# controlled)  
VDR ≧ 1.5V  
Vcc(min.)  
Vcc  
Vcc(min.)  
tCDR  
tR  
VIH  
LB#,UB# ≧ Vcc-0.2V  
VIH  
LB#,UB#  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
9
LY62L6416  
64K X 16 BIT LOW POWER CMOS SRAM  
Rev. 1.6  
PACKAGE OUTLINE DIMENSION  
Ⅱ
44-pin 400mil TSOP  
Package Outline Dimension  
DIMENSIONS IN MILLMETERS  
DIMENSIONS IN MILS  
SYMBOLS  
MIN.  
-
NOM.  
-
MAX.  
1.20  
0.15  
1.05  
0.45  
0.21  
18.618  
12.014  
10.363  
-
MIN.  
NOM.  
-
MAX.  
A
A1  
A2  
b
-
47.2  
5.9  
41.3  
17.7  
8.3  
733  
473  
408  
-
0.05  
0.95  
0.30  
0.12  
18.212  
11.506  
9.957  
-
0.10  
1.00  
-
2.0  
37.4  
11.8  
4.7  
717  
453  
392  
-
3.9  
39.4  
-
c
-
-
D
18.415  
11.760  
10.160  
0.800  
0.50  
0.805  
-
725  
463  
400  
31.5  
19.7  
31.7  
-
E
E1  
e
L
0.40  
-
0.60  
-
15.7  
-
23.6  
-
ZD  
y
Θ
-
0.076  
6o  
-
3
0o  
3o  
0o  
3o  
6o  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
10  
LY62L6416  
64K X 16 BIT LOW POWER CMOS SRAM  
Rev. 1.6  
48-ball 6mm × 8mm TFBGA Package Outline Dimension  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
11  
LY62L6416  
64K X 16 BIT LOW POWER CMOS SRAM  
Rev. 1.6  
ORDERING INFORMATION  
Package Type  
Access Time  
(Speed)(ns)  
45  
Power Type  
Temperature  
Packing  
Type  
Lyontek Item No.  
Range(℃)  
Tray  
LY62L6416ML-45SL  
LY62L6416ML-45SLT  
LY62L6416ML-45SLE  
LY62L6416ML-45SLET  
LY62L6416ML-45SLI  
LY62L6416ML-45SLIT  
LY62L6416ML-45LL  
LY62L6416ML-45LLT  
LY62L6416ML-45LLE  
LY62L6416ML-45LLET  
LY62L6416ML-45LLI  
LY62L6416ML-45LLIT  
LY62L6416ML-55SL  
LY62L6416ML-55SLT  
LY62L6416ML-55SLE  
LY62L6416ML-55SLET  
LY62L6416ML-55SLI  
LY62L6416ML-55SLIT  
LY62L6416ML-55LL  
LY62L6416ML-55LLT  
LY62L6416ML-55LLE  
LY62L6416ML-55LLET  
LY62L6416ML-55LLI  
LY62L6416ML-55LLIT  
LY62L6416ML-70SL  
LY62L6416ML-70SLT  
LY62L6416ML-70SLE  
LY62L6416ML-70SLET  
LY62L6416ML-70SLI  
LY62L6416ML-70SLIT  
LY62L6416ML-70LL  
LY62L6416ML-70LLT  
LY62L6416ML-70LLE  
LY62L6416ML-70LLET  
LY62L6416ML-70LLI  
LY62L6416ML-70LLIT  
44-pin 400 mil  
TSOP II  
Special Ultra Low  
Power  
℃
℃
~70  
0
Tape Reel  
Tray  
℃
-20 ~80  
℃
Tape Reel  
Tray  
℃
-40 ~85  
℃
Tape Reel  
Tray  
Ultra Low Power  
℃
℃
~70  
0
Tape Reel  
Tray  
℃
-20 ~80  
℃
℃
Tape Reel  
Tray  
℃
-40 ~85  
Tape Reel  
Tray  
55  
Special Ultra Low  
Power  
℃
℃
~70  
0
Tape Reel  
Tray  
℃
-20 ~80  
℃
℃
Tape Reel  
Tray  
℃
-40 ~85  
Tape Reel  
Tray  
Ultra Low Power  
℃
℃
~70  
0
Tape Reel  
Tray  
℃
-20 ~80  
℃
℃
Tape Reel  
Tray  
℃
-40 ~85  
Tape Reel  
Tray  
70  
Special Ultra Low  
Power  
℃
℃
~70  
0
Tape Reel  
Tray  
℃
-20 ~80  
℃
℃
Tape Reel  
Tray  
℃
-40 ~85  
Tape Reel  
Tray  
Ultra Low Power  
℃
℃
~70  
0
Tape Reel  
Tray  
℃
-20 ~80  
℃
℃
Tape Reel  
Tray  
℃
-40 ~85  
Tape Reel  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
12  
LY62L6416  
64K X 16 BIT LOW POWER CMOS SRAM  
Rev. 1.6  
ORDERING INFORMATION  
Package Type  
Access Time  
(Speed)(ns)  
45  
Power Type  
Temperature  
Packing  
Type  
Lyontek Item No.  
Range(℃)  
Tray  
LY62L6416GL-45SL  
LY62L6416GL-45SLT  
LY62L6416GL-45SLE  
LY62L6416GL-45SLET  
LY62L6416GL-45SLI  
LY62L6416GL-45SLIT  
LY62L6416GL-45LL  
LY62L6416GL-45LLT  
LY62L6416GL-45LLE  
LY62L6416GL-45LLET  
LY62L6416GL-45LLI  
LY62L6416GL-45LLIT  
LY62L6416GL-55SL  
LY62L6416GL-55SLT  
LY62L6416GL-55SLE  
LY62L6416GL-55SLET  
LY62L6416GL-55SLI  
LY62L6416GL-55SLIT  
LY62L6416GL-55LL  
LY62L6416GL-55LLT  
LY62L6416GL-55LLE  
LY62L6416GL-55LLET  
LY62L6416GL-55LLI  
LY62L6416GL-55LLIT  
LY62L6416GL-70SL  
LY62L6416GL-70SLT  
LY62L6416GL-70SLE  
LY62L6416GL-70SLET  
LY62L6416GL-70SLI  
LY62L6416GL-70SLIT  
LY62L6416GL-70LL  
LY62L6416GL-70LLT  
LY62L6416GL-70LLE  
LY62L6416GL-70LLET  
LY62L6416GL-70LLI  
LY62L6416GL-70LLIT  
48-ball 6mm x 8mm  
TFBGA  
Special Ultra  
Low Power  
℃
℃
~70  
0
Tape Reel  
Tray  
℃
-20 ~80  
℃
Tape Reel  
Tray  
℃
-40 ~85  
℃
Tape Reel  
Tray  
Ultra Low Power  
℃
℃
~70  
0
Tape Reel  
Tray  
℃
-20 ~80  
℃
℃
Tape Reel  
Tray  
℃
-40 ~85  
Tape Reel  
Tray  
55  
Special Ultra  
Low Power  
℃
℃
~70  
0
Tape Reel  
Tray  
℃
-20 ~80  
℃
℃
Tape Reel  
Tray  
℃
-40 ~85  
Tape Reel  
Tray  
Ultra Low Power  
℃
℃
~70  
0
Tape Reel  
Tray  
℃
-20 ~80  
℃
℃
Tape Reel  
Tray  
℃
-40 ~85  
Tape Reel  
Tray  
70  
Special Ultra  
Low Power  
℃
℃
~70  
0
Tape Reel  
Tray  
℃
-20 ~80  
℃
℃
Tape Reel  
Tray  
℃
-40 ~85  
Tape Reel  
Tray  
Ultra Low Power  
℃
℃
~70  
0
Tape Reel  
Tray  
℃
-20 ~80  
℃
℃
Tape Reel  
Tray  
℃
-40 ~85  
Tape Reel  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
13  
LY62L6416  
64K X 16 BIT LOW POWER CMOS SRAM  
Rev. 1.6  
THIS PAGE IS LEFT BLANK INTENTIONALLY.  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
14  
厂商 型号 描述 页数 下载

SEOUL

 		LY600Z 绿色椭圆LED灯[ GREEN OVAL LAMP LED ] 12 页

SEOUL

 		LY601 红外灯LED[ INFRARED LAMP LED ] 14 页

SEOUL

 		LY611 红外灯LED[ INFRARED LAMP LED ] 14 页

LYONTEK

 		LY611024 128K ×8位高速CMOS SRAM[ 128K X 8 BIT HIGH SPEED CMOS SRAM ] 13 页

LYONTEK

 		LY611024E 128K ×8位高速CMOS SRAM[ 128K X 8 BIT HIGH SPEED CMOS SRAM ] 13 页

LYONTEK

 		LY611024I 128K ×8位高速CMOS SRAM[ 128K X 8 BIT HIGH SPEED CMOS SRAM ] 13 页

LYONTEK

 		LY611024JL 128K ×8位高速CMOS SRAM[ 128K X 8 BIT HIGH SPEED CMOS SRAM ] 13 页

LYONTEK

 		LY611024JL-12I [ 暂无描述 ] 13 页

LYONTEK

 		LY611024JL-12LL 128K ×8位高速CMOS SRAM[ 128K X 8 BIT HIGH SPEED CMOS SRAM ] 13 页

LYONTEK

 		LY611024JL-12LLE 128K ×8位高速CMOS SRAM[ 128K X 8 BIT HIGH SPEED CMOS SRAM ] 13 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.165130s