Part Number: XZTNI53W-8
1.6x0.8mm Infrared Emitting Diode
Features
Package Schematics
● Ideal for indication light on hand held products
● Long life and robust package
● Standard Package: 2,000pcs/ Reel
● MSL (Moisture Sensitivity Level): 3
● RoHS compliant
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is ±0.15(0.006") unless otherwise noted.
3. Specifications are subject to change without notice.
Absolute Maximum Ratings
(TA=25°C)
TNI
(GaAs)
Operating Characteristics
(TA=25°C)
TNI
(GaAs)
Unit
Unit
V
Reverse Voltage
Forward Current
VR
IF
5
V
Forward Voltage (Typ.)
(IF=20mA)
VF
VF
IR
1.2
1.6
10
50
mA
Forward Voltage (Max.)
(IF=20mA)
V
Forward Current (Peak)
1/100 Duty Cycle
10us Pulse Width
iFS
1200
mA
Reverse Current (Max.)
(VR=5V)
uA
Power Dissipation
PD
TA
80
mW
°C
Wavelength of Peak
Emission CIE127-2007* (Typ.)
(IF=20mA)
Operating Temperature
Storage Temperature
-40 ~ +85
-40 ~ +85
λP
940*
nm
Tstg
Spectral Line Full Width
At Half-Maximum (Typ.)
(IF=20mA)
A Relative Humidity between 40% and 60% is recommended in
ESD-protected work areas to reduce static build up during assembly
process (Reference JEDEC/JESD625-A and JEDEC/J-STD-033)
△λ
50
90
nm
pF
Capacitance (Typ.)
(VF=0V, f=1MHz)
C
Radiant Intensity
CIE127-2007*
(Po=mW/sr)
Wavelength
CIE127-2007*
Viewing
Angle
2θ 1/2
Part
Number
Emitting
Material
Lens-color
nm
λP
@20mA
min.
typ.
2
1.2*
4.8
2.8*
XZTNI53W-8
GaAs
Water Clear
940*
60°
*Radiant intensity value and wavelength are in accordance with CIE127-2007 standards.
Feb 09,2017
XDSB8903 V1-X Layout: Maggie L.
P. 1/4
