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VUO122-08NO7

型号：

VUO122-08NO7

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

234 K

下载PDF手册
VUO122-08NO7  
3~  
Rectifier  
Standard Rectifier Module  
VRRM  
IDAV  
IFSM  
V
A
A
=
=
=
800  
125  
1000  
3~ Rectifier Bridge  
Part number  
VUO122-08NO7  
PS18  
D1 D3 D5  
A1  
L9  
K10  
D2 D4 D6  
EG1  
ECO-PAC2  
Package:  
Features / Advantages:  
Applications:  
● Package with DCB ceramic  
● Improved temperature and power cycling  
● Planar passivated chips  
● Very low forward voltage drop  
● Very low leakage current  
● Diode for main rectification  
● Isolation Voltage:  
● Industry standard outline  
● RoHS compliant  
● Soldering pins for PCB mounting  
● Height: 9 mm  
V~  
3000  
● For three phase bridge configurations  
● Supplies for DC power equipment  
● Input rectifiers for PWM inverter  
● Battery DC power supplies  
● Field supply for DC motors  
● Base plate: DCB ceramic  
● Reduced weight  
● Advanced power cycling  
Disclaimer Notice  
Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
www.littelfuse.com/disclaimer-electronics.  
and may not be used in, all applications. Read complete Disclaimer Notice at  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20191220b  
© 2019 IXYS all rights reserved  
VUO122-08NO7  
Ratings  
Rectifier  
Symbol  
VRSM  
Definition  
Conditions  
min. typ. max. Unit  
TVJ = 25°C  
TVJ = 25°C  
TVJ = 25°C  
TVJ = 150°C  
TVJ = 25°C  
900  
800  
100  
2
V
V
max. non-repetitive reverse blocking voltage  
max. repetitive reverse blocking voltage  
VRRM  
IR  
reverse current  
VR = 800 V  
µA  
mA  
V
VR = 800 V  
IF = 50 A  
IF = 150 A  
IF = 50 A  
IF = 150 A  
TC = 115°C  
rectangular  
forward voltage drop  
1.13  
1.47  
1.05  
1.49  
125  
VF  
V
TVJ  
=
°C  
V
125  
V
bridge output current  
TVJ = 150°C  
TVJ = 150°C  
A
IDAV  
d = ⅓  
0.80  
V
VF0  
threshold voltage  
slope resistance  
for power loss calculation only  
4.6 mΩ  
0.6 K/W  
K/W  
rF  
thermal resistance junction to case  
thermal resistance case to heatsink  
RthJC  
RthCH  
Ptot  
0.3  
TC = 25°C  
TVJ = 45°C  
VR = 0 V  
205  
1.00  
1.08  
850  
W
kA  
kA  
A
total power dissipation  
max. forward surge current  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
VR = 400 V; f = 1 MHz  
IFSM  
TVJ = 150°C  
VR = 0 V  
920  
A
value for fusing  
TVJ = 45°C  
VR = 0 V  
I²t  
5.00 kA²s  
4.85 kA²s  
3.62 kA²s  
3.52 kA²s  
pF  
TVJ = 150°C  
VR = 0 V  
TVJ = 25°C  
35  
CJ  
junction capacitance  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20191220b  
© 2019 IXYS all rights reserved  
VUO122-08NO7  
Ratings  
Package ECO-PAC2  
Symbol  
IRMS  
Definition  
Conditions  
min. typ. max. Unit  
per terminal  
100  
150  
125  
125  
A
°C  
°C  
°C  
g
RMS current  
-40  
-40  
-40  
TVJ  
virtual junction temperature  
Top  
operation temperature  
storage temperature  
Tstg  
24  
Weight  
MD  
1.4  
2
Nm  
mounting torque  
terminal to terminal  
terminal to backside  
6.0  
10.0  
mm  
mm  
V
dSpp/App  
dSpb/Apb  
creepage distance on surface | striking distance through air  
t = 1 second  
3000  
2500  
V
isolation voltage  
ISOL  
50/60 Hz, RMS; IISOL ≤ 1 mA  
t = 1 minute  
V
Logo  
Lot#  
Circuit Diagram  
yywwZ 123456  
XXX XX-XXXXX  
Date Code/Location Part Number  
Ordering  
Standard  
Ordering Number  
Marking on Product  
VUO122-08NO7  
Delivery Mode  
Quantity Code No.  
25 494429  
VUO122-08NO7  
Box  
TVJ =150°C  
Equivalent Circuits for Simulation  
* on die level  
Rectifier  
V0  
I
R0  
threshold voltage  
slope resistance *  
0.8  
3.4  
V
V0 max  
R0 max  
mΩ  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20191220b  
© 2019 IXYS all rights reserved  
VUO122-08NO7  
Outlines ECO-PAC2  
0.2  
1.55  
0.2  
2x M4  
10.95  
0.2  
0.2  
1.55  
1.55  
0.2  
3.3  
0.2  
0.2  
5.7  
9.4  
A C E  
G
I
K
1
2
3
10  
11  
12  
B
D
O
F
H
T
J
4
5
6
13  
14  
15  
M
R
W
2
.
0
7
8
9
16  
17  
18  
3
.
°
4
5
4
Ø
L N P  
S
V
X
1.5  
8.3  
43  
0.2  
51  
PS18  
D1 D3 D5  
A1  
L9  
K10  
D2 D4 D6  
EG1  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20191220b  
© 2019 IXYS all rights reserved  
VUO122-08NO7  
Rectifier  
800  
700  
200  
6000  
5000  
50 Hz  
0.8 x V RRM  
VR = 0 V  
160  
I2t  
IF 120  
4000  
[A2s]  
IFSM  
TVJ = 45°C  
TVJ = 45°C  
600  
500  
400  
[A]  
[A]  
80  
3000  
2000  
1000  
TVJ = 150°C  
TVJ  
=
TVJ = 150°C  
40 125°C  
150°C  
TVJ = 25°C  
0
0.4  
10-3  
10-2  
10-1  
100  
0.8  
1.2  
1.6  
2.0  
1
10  
t [ms]  
VF [V]  
t [s]  
Fig. 3 I2t vs. time per diode  
Fig. 1 Forward current vs.  
voltage drop per diode  
Fig. 2 Surge overload current  
vs. time per diode  
60  
50  
40  
30  
20  
10  
0
DC =  
1
160  
120  
RthJA  
:
DC =  
1
0.6 KW  
0.8 KW  
0.5  
0.5  
0.4  
0.4  
1
2
4
8
KW  
KW  
KW  
KW  
0.33  
0.17  
0.08  
0.33  
0.17  
0.08  
Ptot  
[W]  
IF(AV)M  
80  
40  
0
[A]  
0
10  
20  
30  
40  
50 0  
25  
50  
75  
TA [°C]  
100  
125  
150  
0
25 50 75 100 125 150  
IdAVM [A]  
TC [°C]  
Fig. 4 Power dissipation vs. forward current  
and ambient temperature per diode  
Fig. 5 Max. forward current vs.  
case temperature per diode  
0.7  
0.6  
0.5  
Constants for ZthJC calculation:  
ZthJC  
0.4  
[K/W]  
0.3  
i
Rth (K/W)  
ti (s)  
1
2
3
4
0.08  
0.04  
0.29  
0.19  
0.012  
0.007  
0.036  
0.102  
0.2  
0.1  
0.0  
1
10  
100  
1000  
10000  
t [ms]  
Fig. 6 Transient thermal impedance junction to case vs. time per diode  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20191220b  
© 2019 IXYS all rights reserved  
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