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VUB120-16NO1

型号:

VUB120-16NO1

描述:

三相整流桥IGBT ,快恢复二极管的制动系统[ Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

4 页

PDF大小:

106 K

VUB 120 / 160  
VRRM = 1200/1600 V  
IdAVM = 121/157 A  
Three Phase Rectifier Bridge  
with IGBT and Fast Recovery Diode  
for Braking System  
Preliminary Data  
VRRM Type  
VRRM Type  
V
V
1200 VUB 120-12 NO1 1600 VUB 120-16 NO1  
1200 VUB 160-12 NO1 1600 VUB 160-16 NO1  
Symbol  
Test Conditions  
Maximum Ratings  
VUB 120 VUB160  
Features  
Soldering connections for PCB  
mounting  
VRRM  
IdAVM  
1200/1600  
1200/1600  
V
A
TC = 75°C, sinusoidal 120°  
121  
157  
Isolation voltage 3600 V~  
Ultrafast diode  
Convenient package outline  
UL registered E 72873  
Case and potting UL94 V-0  
Thermistor  
IFSM  
I2t  
TVJ = 45°C,  
TVJ = 150°C,  
t = 10 ms, VR = 0 V  
t = 10 ms, VR = 0 V  
650  
580  
850  
760  
A
A
TVJ = 45°C,  
TVJ = 150°C,  
t = 10 ms, VR = 0 V  
t = 10 ms, VR = 0V  
2110  
1680  
3610  
2880  
A
A
Ptot  
TC = 25°C per diode  
130  
160  
W
Applications  
VCES  
VGE  
TVJ = 25°C to 150°C  
Continuous  
1200  
± 20  
1200  
± 20  
V
V
Drive Inverters with brake system  
IC25  
IC75  
TC = 25°C, DC  
TC = 75°C, DC  
TC = 75°C, d = 0.5  
100  
71  
56  
150  
106  
85  
A
A
A
Advantages  
2 functions in one package  
Easy to mount with two screws  
Suitable for wave soldering  
High temperature and power cycling  
ICM  
tp = Pulse width limited by TVJM  
200  
400  
300  
600  
A
Ptot  
TC = 25°C  
W
capability  
VRRM  
IFAV  
IFRMS  
IFRM  
1200  
V
A
A
A
TC = 75°C, rectangular d = 0.5  
TC = 75°C, rectangular d = 0.5  
TC = 75°C, tP = 10 µs, f = 5 kHz  
25  
39  
tbd  
Dimensions in mm (1 mm = 0.0394")  
IFSM  
TVJ = 45°C,  
TVJ = 150°C,  
t = 10 ms  
t = 10 ms  
200  
180  
A
A
Ptot  
TC = 25°C  
100  
W
TVJ  
TVJM  
Tstg  
-40...+150  
150  
-40...+125  
°C  
°C  
°C  
VISOL  
50/60 Hz  
IISOL £ 1 mA  
t = 1 min  
t = 1 s  
3000  
3600  
V~  
V~  
Md  
Mounting torque  
(M5)  
2-2.5  
Nm  
(10-32 unf)  
18-22  
lb.in.  
dS  
dA  
a
Creep distance on surface  
Strike distance in air  
Maximum allowable acceleration  
12.7  
9.4  
50  
mm  
mm  
m/s2  
Weight  
typ.  
80  
g
Data according to IEC 60747  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2000 IXYS All rights reserved  
1 - 4  
VUB 120 / 160  
Symbol  
Test Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
min. typ. max.  
IR  
VR = VRRM  
VR = VRRM  
,
,
TVJ = 25°C  
TVJ = 150°C  
0.3 mA  
5
mA  
VF  
IF = 150 A,  
TVJ = 25°C  
VUB 120  
VUB 160  
1.59  
1.49  
V
V
VT0  
rT  
For power-loss calculations only VUB 120  
0.80  
0.75  
6.1 mW  
4.6 mW  
V
V
VUB 160  
TVJ = 150°C  
VUB 120  
VUB 160  
RthJC  
RthJH  
per diode  
VUB 120  
VUB 160  
1.0 K/W  
0.8 K/W  
VUB 120  
VUB 160  
1.3 K/W  
1.1 K/W  
VBR(CES)  
VGE(th)  
VGS = 0 V, IC = 3 mA  
IC = 20 mA  
IC = 30 mA  
1200  
V
V
V
VUB 120  
VUB 160  
5
5
8
8
ICES  
TVJ = 25°C, VCE = 1200 V  
TVJ = 125°C, VCE = 0,8 žVCES  
VUB 120  
0.8 mA  
1.2 mA  
VUB 160  
VUB 120  
VUB 160  
3
mA  
4.5 mA  
VCEsat  
VGE = 15 V, IC = 50 A  
VUB 120  
VUB 160  
2.9  
2.9  
V
V
VGE = 15 V, IC = 75 A  
tSC  
(SCSOA)  
VGE = 15 V, VCE = 720 V, TVJ = 125°C,  
RG = 11 W, non repetitive  
RG = 7 W, non repetitive  
VUB 120  
10  
10  
ms  
ms  
VUB 160  
RBSOA  
VGE = 15 V, VCE = 960 V, TVJ = 125°C,  
Clamped Inductive load, L = 100 mH  
RG = 11 W  
RG = 7 W  
VUB 120  
100  
150  
A
A
VUB 160  
Cies  
VCE = 25 V, f = 1 MHz, VGE = 0 V VUB 120  
VUB 160  
9
13.5  
nF  
nF  
td(on)  
td(off)  
Eon  
300  
350  
12  
18  
16  
ns  
ns  
mJ  
mJ  
mJ  
mJ  
VCE = 720 V, IC = 50/75 A  
VUB 120  
VGE = 15 V, RG = 11/7 W  
VUB 160  
Inductive load; L = 100 mH  
TVJ = 125°C  
Eoff  
RthJC  
RthJH  
IR  
VUB 120  
VUB 160  
24  
VUB 120  
VUB 160  
0.32 K/W  
0.21 K/W  
VUB 120  
VUB 160  
0.45 K/W  
0.30 K/W  
VR = VRRM  
,
TVJ = 25°C  
0.75 mA  
VR = 0,8 VCES, TVJ = 125°C  
4
7
2.55  
1.65  
mA  
VF  
IF = 30 A, TVJ = 25°C  
V
VT0  
rT  
For power-loss calculations only  
V
TVJ = 150°C  
18.2 mW  
IRM  
trr  
IF  
IF  
= 30 A, -diF/dt = 240 A/ms, VR = 540 V  
= 1 A, -diF/dt = 100 A/ms, VR = 30 V  
16  
40  
18  
60  
A
ns  
RthJC  
RthJH  
1.2 K/W  
1.6 K/W  
R25  
Siemens S 891/2,2/+9  
2.2 kW  
© 2000 IXYS All rights reserved  
2 - 4  
VUB 120  
300  
W
140  
A
120  
250  
RthKA [K/W]  
Ptot  
0.1  
0.3  
0.5  
0.7  
1
100  
Id(AV)M  
200  
150  
100  
50  
80  
60  
40  
20  
0
1.5  
3
0
0
20  
40  
60  
80  
100  
120  
0
40  
80  
120  
160  
0
40  
80  
120  
160  
°C  
A
°C  
TA  
TC  
Id(AV)M  
Fig. 1 Power dissipation versus direct output current and ambient temperature  
(Rectifier bridge)  
Fig. 2 Maximum forward current  
versus case temperature  
(Rectifier bridge)  
200  
1.50  
Eoff  
TVJ = 25°C  
VGE = 15V  
VCE(sat)  
A
tfi  
IC = 100A  
IC = 50A  
IC = 25A  
VGE = 13V  
VGE = 11V  
150  
1.25  
norm.  
IC  
norm.  
under evaluation  
100  
50  
0
1.00  
0.75  
0.50  
VGE = 9V  
VGE = 15V  
-50 -25  
V 8  
C
0
2
4
6
0
25 50 75 100 125
A
TVJ  
IC  
VCE  
Fig. 3 Output characteristics for  
braking (IGBT)  
Fig. 4 Temperature dependence of  
output saturation voltage,  
normalized (IGBT)  
Fig. 5 Turn-off energy per pulse and  
fall time in collector current,  
normalized (IGBT)  
1.3  
D=0.1  
Eoff  
200  
tfi  
A
1.2  
D=0.2  
150  
IC  
norm.  
D=0.3  
under evaluation  
1.1  
D=0.4  
100  
D=0.5  
D=0.7  
1.0  
50  
TK = 80 C  
VUB 120  
0
0.9  
0.0001  
0.001  
0.01  
0.1  
1
10  
s
RG  
tp  
Fig. 6 Collector current dependence on pulse width and duty cycle (IGBT)  
Fig.7 Turn-off energy per pulse and  
fall time on RG (IGBT)  
© 2000 IXYS All rights reserved  
3 - 4  
VUB 120  
50  
A
6
C
5
200  
100  
TVJ=100 C  
VR= 540 V  
40  
30  
20  
10  
0
A
max.  
Qr  
IF  
IC  
4
3
2
1
0
IF = 30 A  
10  
1
IF = 60 A  
IF = 30 A  
IF = 15 A  
TVJ=150 C  
TVJ=25 C  
TVJ=125 C  
RG= 11  
typ.  
0.1  
A/ s  
1000  
0
400  
800  
VCE  
1200  
0
1
2
3
4
1
10  
100  
-diF/dt  
V
V
VF  
Fig. 8 Reverse baised safe operation  
area (IGBT)  
Fig. 9 Forward current versus  
Fig. 10 Recovery charge versus  
-diF/dt (Fast Diode)  
voltage drop (Fast Diode)  
70  
1.4  
s
1.0  
s
50  
TVJ=100 C  
A
TVJ=100 C  
VR= 540 V  
V
60  
VFR  
VR= 540 V  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
0.8  
0.6  
0.4  
0.2  
0  
40  
max.  
VFR  
max.  
IF = 30 A  
IF = 60 A  
IF = 30 A  
IF = 15 A  
trr  
IRM  
50  
40  
IF = 30 A  
IF = 60 A  
IF = 30 A  
IF = 15 A  
30  
20  
10  
0
typ.  
30  
tFR  
20  
TVJ=125 C  
IF = 30A  
10  
0
typ.  
tFR  
0
100 200 300 400 A/ s 600  
0
100 200 300 400 A/s 600  
-diF/dt  
0
100 200 300 400 A/s 600  
-diF/dt  
-diF/dt  
Fig.11 Peak forward voltage and  
recovery time versus -diF/dt  
(Fast Diode)  
Fig.12 Recovery time versus -diF/dt  
(Fast Diode)  
Fig.13 Peak reverse current versus  
-diF/dt (Fast Diode)  
1.8  
1.4  
1.2  
1.0  
K/W  
Fast Diode  
1.4  
per Rectifier  
Diode  
ZthJK  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
IRM  
Kf  
0.8  
0.6  
0.4  
0.2  
0.0  
QR  
IGBT  
VUB 120  
0.001  
0.01  
0.1  
1
10  
100  
s
0
40  
80  
TVJ  
120  
160  
°C  
t
Fig.14 Dynamic parameters versus  
Fig.15 Transient thermal impedance junction to heatsink ZthJK  
junction temperature (Fast Diode)  
© 2000 IXYS All rights reserved  
4 - 4  
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