Advanced Technical Information
HiPerFETTM
Power MOSFETs
Q-Class
IXFH20N80Q VDSS
IXFK20N80Q ID25
IXFT20N80Q RDS(on) = 0.42 W
= 800 V
20 A
=
N-Channel Enhancement Mode
Avalanche Rated,
trr £ 250 ns
Low Qg, High dv/dt
TO-247AD(IXFH)
Symbol
TestConditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
800
800
V
V
(TAB)
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
20
80
20
A
A
A
TO-268 (D3) ( IXFT)
G
EAR
EAS
TC = 25°C
TC = 25°C
45
1.5
mJ
J
S
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
,
5
V/ns
TO-264AA(IXFK)
PD
TC = 25°C
360
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
G
D
S
D (TAB)
TL
1.6 mm (0.063 in) from case for 10 s
Mountingtorque
300
°C
G = Gate
Md
TO-247
TO-264
1.13/10 Nm/lb.in.
0.9/6 Nm/lb.in.
S = Source
TAB = Drain
Weight
Symbol
TO-247
TO-268
TO-264
6
4
10
g
g
g
Features
TestConditions
CharacteristicValues
• IXYS advanced low Qg process
• Internationalstandardpackages
• EpoxymeetUL94V-0,flammability
classification
• Low RDS (on) low Qg
• Avalanche energy and current rated
• Fast intrinsic rectifier
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS = 0 V, ID = 250 mA
800
2.5
V
V
VGS(th)
VDS = VGS, ID = 4 mA
4.5
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±200 nA
25 mA
Advantages
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
1
mA
• Easy to mount
• Space savings
• High power density
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
0.42
W
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98616(4/99)
1 - 2
