Advanced Technical Information
HiPerFETTM Power MOSFETs
IXFR 120N20 VDSS = 200 V
ID25 = 105 A
ISOPLUS247TM
(Electrically Isolated Back Surface)
RDS(on) = 17 mW
trr £ 250 ns
Single MOSFET Die
ISOPLUS 247TM
Symbol
TestConditions
MaximumRatings
E153432
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
200
200
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
G
D
ID25
ID(RMS)
IDM
TC = 25°C (MOSFET chip capability)
Externallead(currentlimit)
TC = 25°C, Note 1
105
76
480
120
A
A
A
A
Isolated back surface*
D = Drain
G = Gate
S = Source
IAR
TC = 25°C
EAR
EAS
TC = 25°C
TC = 25°C
60
3
mJ
J
*Patentpending
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
5
V/ns
Features
PD
TJ
TC = 25°C
400
W
• SiliconchiponDirect-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electricalisolation
• Low drain to tab capacitance(<25pF)
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
-55 ... +150
°C
TJM
Tstg
150
-55 ... +150
°C
°C
TL
1.6 mm (0.063 in.) from case for 10 s
300
2500
5
°C
V~
g
VISOL
Weight
50/60 Hz, RMS
t = 1 min
• Fast intrinsic Rectifier
Applications
Symbol
VDSS
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
• DC-DC converters
• Battery chargers
• Switched-modeandresonant-mode
powersupplies
• DC choppers
• AC motor control
VGS = 0 V, ID = 3mA
200
2.0
V
VGS(th)
IGSS
VDS = VGS, ID = 8mA
4.0 V
VGS = ±20 V, VDS = 0
±100nA
Advantages
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
100 mA
2 mA
• Easy assembly
• Space savings
• High power density
• Low noise to ground
RDS(on)
VGS = 10 V, ID = 60A
Note 2
17 mW
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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