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IXFN180N10

型号:

IXFN180N10

描述:

HiPerFET功率MOSFET的单MOSFET模具[ HiPerFET Power MOSFET Single MOSFET Die ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

4 页

PDF大小:

86 K

HiPerFETTM  
Power MOSFET  
IXFN 180N10  
VDSS = 100 V  
ID25  
= 180 A  
= 8 mΩ  
RDS(on)  
Single MOSFET Die  
Preliminary data sheet  
t 250 ns  
rr  
miniBLOC, SOT-227 B (IXFN)  
Symbol TestConditions  
Maximum Ratings  
E153432  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
100  
100  
V
V
S
G
VGS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
S
ID25  
IL(RMS)  
IDM  
TC = 25°C  
180  
100  
720  
180  
A
A
A
A
D
Terminal (current limit)  
TC = 25°C; Note 1  
TC = 25°C  
IAR  
G = Gate  
S = Source  
D = Drain  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
60  
3
mJ  
J
Either Source terminal at miniBLOC can be used  
as Main or Kelvin Source  
dv/dt  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150°C, RG = 2 Ω  
5
V/ns  
Features  
PD  
TC = 25°C  
600  
W
International standard package  
Encapsulating epoxy meets  
UL 94 V-0, flammability classification  
miniBLOC with Aluminium nitride  
isolation  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
TL  
1.6 mm (0.063 in) from case for 10 s  
300  
°C  
Low RDS (on) HDMOSTM process  
Rugged polysilicon gate cell structure  
Unclamped Inductive Switching (UIS)  
rated  
Low package inductance  
Fast intrinsic Rectifier  
VISOL  
50/60 Hz, RMS  
ISOL 1 mA  
t = 1 min  
t = 1 s  
2500  
3000  
V~  
V~  
I
Md  
Mounting torque  
Terminal connection torque  
1.5/13 Nm/lb.in.  
1.5/13 Nm/lb.in.  
Weight  
30  
g
Applications  
DC-DC converters  
Synchronous rectification  
Battery chargers  
Switched-mode and resonant-mode  
power supplies  
DC choppers  
Temperature and lighting controls  
Low voltage relays  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
Min.  
100  
2
Typ.  
Max.  
VDSS  
VGS(th)  
IGSS  
VGS= 0 V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS= ±20V, VGS = 0V  
V
V
4
±100  
nA  
IDSS  
VDS= VDSS  
VGS= 0 V  
TJ = 25°C  
TJ = 125°C  
100  
2
µA  
mA  
Advantages  
Easy to mount  
Space savings  
High power density  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25  
Note 2  
8
mΩ  
98546B (8/99)  
© 1999 IXYS All rights reserved  
IXFN180N10  
Symbol  
TestConditions  
Characteristic Values  
Min. Typ. Max.  
miniBLOC, SOT-227 B  
(TJ = 25°C, unless otherwise specified)  
gfs  
VDS = 10 V; ID = 60A, Note 2  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
60  
90  
S
Ciss  
Coss  
Crss  
9100  
3200  
1600  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
50  
90  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
M4 screws (4x) supplied  
RG = 1 (External),  
140  
65  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min.  
Max.  
A
B
31.50  
7.80  
31.88  
8.20  
1.240  
0.307  
1.255  
0.323  
Qg(on)  
Qgs  
360  
65  
nC  
nC  
nC  
C
D
4.09  
4.09  
4.29  
4.29  
0.161  
0.161  
0.169  
0.169  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
E
F
4.09  
4.29  
0.161  
0.587  
0.169  
0.595  
Qgd  
190  
14.91  
15.11  
G30.12  
30.30  
1.186  
1.193  
RthJC  
RthCK  
LOC, SOT-227 B  
0.21  
K/W  
K/W  
H
38.00  
38.23  
1.496  
1.505  
J
11.68  
8.92  
12.22  
9.60  
0.460  
0.351  
0.481  
0.378  
miniBLOC, SOT-227 B  
0.05  
K
L
0.76  
0.84  
0.030  
0.496  
0.033  
0.506  
M
12.60  
12.85  
N
O
25.15  
1.98  
25.42  
2.13  
0.990  
0.078  
1.001  
0.084  
P
4.95  
5.97  
0.195  
1.045  
0.235  
1.059  
Q
26.54  
26.90  
R
S
3.94  
4.72  
4.42  
4.85  
0.155  
0.186  
0.174  
0.191  
Source-DrainDiode  
(TJ = 25°C, unless otherwise specified)  
Characteristic Values  
Min. Typ. Max.  
T
24.59  
-0.05  
25.07  
0.1  
0.968  
0.987  
0.004  
U
-0.002  
Symbol  
TestConditions  
IS  
VGS = 0  
180  
720  
A
ISM  
Repetitive;  
A
pulse width limited by TJM  
VSD  
IF = 100 A, VGS = 0 V,  
1.5  
V
Pulse test, t 300 µs, duty cycle d 2 %  
trr  
QRM  
IRM  
250  
n s  
µC  
A
IF = 50 A, -di/dt = 100 A/µs, VR = 50 V  
1.1  
13  
Notes:  
1.  
Pulse width limited by T  
2.  
Pulse test, t 300 ms, dJuMt.y cycle d 2 %  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
IXFN180N10  
Figure 2. Output Characteristics at 125OC  
Figure 1. Output Characteristics at 25OC  
200  
150  
100  
50  
200  
VGS=10V  
TJ=125OC  
VGS=10V  
TJ=25OC  
7V  
7V  
6V  
9V  
8V  
9V  
8V  
6V  
150  
100  
50  
5V  
5V  
0
0
0.0  
0
1
2
3
4
5
0.5  
1.0  
1.5  
2.0  
VDS - Volts  
Figure 4. RDS(on) normalized to 15A/25OC vs. TJ  
VDS - Volts  
Figure 3. RDS(on) normalized to 15A/25OC vs. ID  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
2.0  
V
GS = 10V  
TJ = 125OC  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
ID=180A  
VGS=10V  
V
GS=15V  
TJ = 25OC  
ID=90A  
VGS=10V  
V
GS=15V  
0
50  
100  
ID - Amperes  
150  
200  
25  
50  
75  
100  
125  
150  
TJ - Degrees C  
Figure5.DrainCurrentvs.CaseTemperature  
Figure6. AdmittanceCurves  
125  
100  
80  
100  
75  
50  
25  
0
Terminal Current Limit  
60  
40  
TJ = 125oC  
TJ = 25oC  
20  
0
-50 -25  
0
25 50 75 100 125 150  
TC - Degrees C  
2
4
6
8
VGS - Volts  
© 1999 IXYS All rights reserved  
IXFN180N10  
Figure7. GateCharge  
Figure8.CapacitanceCurves  
15  
12  
9
Ciss  
10000  
V
DS=50V  
ID=90A  
F = 100kHz  
IG=10mA  
Coss  
6
3
Crss  
0
1000  
0
50 100 150 200 250 300 350 400  
0
5
10 15 20 25 30 35 40  
Gate Charge - nC  
VDS - Volts  
Figure 10. Forward Bias Safe Operating Area  
200  
Figure 9. Forward Voltage Drop of the Intrinsic Diode  
200  
100  
175  
150  
125  
100  
75  
VGS= 0V  
1 ms  
10 ms  
10  
TJ=125OC  
TC = 25OC  
DC  
TJ=25OC  
50  
25  
1
0
0.4  
1
10  
100  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
VDS - Volts  
VSD - Volts  
Figure11.TransientThermalResistance  
0.40  
0.20  
0.10  
0.08  
0.06  
0.04  
0.02  
0.01  
10-3  
10-2  
10-1  
Pulse Width - Seconds  
100  
101  
IXYS reserves the right to change limits, test conditions, and dimensions.  
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