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IXGQ240N30PB

型号：

IXGQ240N30PB

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

5 页

PDF大小：

152 K

下载PDF手册
PolarTM High Speed  
IGBT  
VCES = 300V  
ICP = 500A  
IXGQ240N30PB  
VCE(sat) ≤ 1.6V  
For PDP Applications  
TO-3P  
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
300  
V
G
C
E
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
Tab  
IC25  
ICP  
TC = 25°C (Chip Capability)  
TJ ≤ 150°C, tp < 10μs  
240  
500  
A
A
G = Gate  
C
= Collector  
IC(RMS)  
Lead Current Limit  
75  
A
E = Emitter Tab = Collector  
SSOA  
VGE = 15V, TVJ = 125°C, RG = 1Ω  
ICM = 240  
A
(RBSOA)  
Clamped Inductive Load  
VCE ≤ VCES  
Pd  
TC = 25°C  
500  
W
Features  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
°C  
°C  
°C  
• Low VCE(sat)  
-55 ... +150  
- for Minimum On-State Conduction  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Losses  
• MOS Gate Turn-On  
- Drive Simplicity  
Md  
Mounting Torque  
1.13/10  
5.5  
Nm/lb.in.  
g
Weight  
Applications  
• PDP Screen Drivers  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified  
Min.  
300  
3.0  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 1mA, VCE = VGE  
VCE = VCES, VGE= 0V  
V
V
5.0  
1
μA  
TJ = 125°C  
200 μA  
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
VCE(sat)  
IC = 120A, VGE = 15V, Note 1  
TJ = 125°C  
1.35  
1.40  
1.85  
2.10  
1.60  
V
V
V
V
IC = 240A  
TJ = 125°C  
© 2007 IXYS CORPORATION, All Rights Reserved  
DS99525C(06/07)  
IXGQ240N30PB  
Symbol  
Test Conditions  
Characteristic Values  
TO-3P (IXGQ) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 120A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
75  
130  
S
Cies  
Coes  
Cres  
6900  
435  
97  
pF  
pF  
pF  
Qg  
225  
37  
nC  
nC  
nC  
Qge  
Qgc  
IC = 120A, VGE = 15V, VCE = 0.5 • VCES  
88  
Resistive Switching Times, TJ = 25°C  
IC = 120A, VGE = 15V  
td(on)  
tr  
td(off)  
tf  
30  
70  
104  
45  
ns  
ns  
ns  
ns  
Pins: 1 - Gate  
2 - Drain  
VCE = 0.8 • VCES, RG = 1Ω  
3 - Source 4, Tab - Drain  
td(on)  
tr  
td(off)  
tf  
29  
104  
103  
100  
ns  
ns  
ns  
ns  
Resistive Switching Times, TJ = 125°C  
IC = 120A, VGE = 15V  
VCE = 0.8 • VCES, RG = 1Ω  
RthJC  
RthCS  
0.25 °C/W  
°C/W  
0.21  
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
IXGQ240N30PB  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
240  
200  
160  
120  
80  
350  
300  
250  
200  
150  
100  
50  
VGE = 15V  
VGE = 15V  
13V  
11V  
13V  
11V  
9V  
7V  
9V  
7V  
40  
0
0
0.0  
0.0  
6
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
2.2  
2.4  
2.8  
15  
0.0  
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
7.0  
8.0  
150  
8.5  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
1.6  
1.4  
1.2  
1
240  
200  
160  
120  
80  
VGE = 15V  
VGE = 15V  
13V  
11V  
I C = 240A  
9V  
7V  
I C =120A  
0.8  
0.6  
40  
I C = 60A  
5V  
0
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
-50  
-25  
0
25  
50  
75  
100  
125  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
300  
270  
240  
210  
180  
150  
120  
90  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
TJ = 25ºC  
I C = 240A  
120A  
60A  
TJ = 125ºC  
25ºC  
- 40ºC  
60  
30  
0
7
8
9
10  
11  
12  
13  
14  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
VGE - Volts  
VGE - Volts  
© 2007 IXYS CORPORATION, All Rights Reserved  
IXGQ240N30PB  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
140  
120  
100  
80  
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 150V  
I C = 120A  
I G = 10mA  
25ºC  
125ºC  
60  
6
40  
4
20  
2
0
0
0
50  
1
40  
80  
120  
160  
200  
240  
280  
0
50  
100  
150  
200  
250  
IC - Amperes  
QG - NanoCoulombs  
Fig. 9. Reverse-Bias Safe Operating Area  
Fig. 10. Capacitance  
270  
240  
210  
180  
150  
120  
90  
10,000  
1,000  
100  
C
C
ies  
oes  
C
res  
TJ = 125ºC  
60  
RG =1Ω  
dv / dt < 10V / ns  
= 1 MHz  
5
30  
f
10  
0
0
10  
15  
20  
25  
30  
35  
40  
100  
150  
VCE - Volts  
200  
250  
300  
VCE - Volts  
Fig. 11. Forward-Bias Safe Operating Area  
Fig. 12. Maximum Transient Thermal Impedance  
1,000  
100  
10  
1.00  
0.10  
0.01  
V
Limit  
CE(sat)  
1µs  
10µs  
T
T
= 150ºC  
= 25ºC  
J
100µs  
C
Single Pulse  
1ms  
100  
10  
1000  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXGQ240N30PB  
Fig. 14. Resistive Turn-on Rise Time  
Fig. 13. Resistive Turn-on Rise Time  
vs. Junction Temperature  
vs. Collector Current  
110  
100  
90  
110  
100  
90  
RG = 1Ω , VGE = 15V  
RG = 1Ω , VGE = 15V  
VCE = 240V  
VCE = 240V  
TJ = 125ºC  
I C = 120A  
80  
80  
70  
70  
60  
60  
TJ = 25ºC  
50  
50  
I C = 60A  
40  
40  
30  
30  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
60  
65  
70  
75  
80  
85  
90  
95  
100 105 110 115 120  
IC - Amperes  
TJ - Degrees Centigrade  
Fig. 16. Resistive Turn-off Switching Times  
vs. Junction Temperature  
Fig. 15. Resistive Turn-on Switching Times  
vs. Gate Resistance  
120  
140  
135  
130  
125  
120  
115  
110  
105  
100  
95  
160  
34  
tf  
td(on)  
- - - -  
110  
100  
90  
tf  
td(off)  
- - - -  
TJ = 125ºC, VGE = 15V  
140  
120  
100  
80  
33  
32  
31  
30  
29  
28  
RG = 1Ω, VGE = 15V  
VCE = 240V  
I C = 60A  
VCE = 240V  
80  
I C = 120A  
I C = 60A  
70  
I C = 120A  
60  
50  
I C = 60A  
60  
40  
40  
30  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Resistive Turn-off Switching Times  
vs. Gate Resistance  
Fig. 17. Resistive Turn-off Switching Times  
vs. Collector Current  
160  
140  
120  
100  
80  
130  
125  
120  
115  
110  
105  
100  
95  
109  
108  
107  
106  
105  
104  
103  
102  
101  
100  
99  
190  
180  
170  
160  
150  
140  
130  
120  
110  
100  
90  
t f  
td(off  
) - - - -  
t f  
td(off) - - - -  
RG = 1Ω, VGE = 15V  
TJ = 125ºC, VGE = 15V  
VCE = 240V  
VCE = 240V  
TJ = 125ºC  
I C = 60A  
60  
TJ = 25ºC  
I C = 120A  
40  
20  
60  
65  
70  
75  
80  
85  
90  
95 100 105 110 115 120  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
IC - Amperes  
RG - Ohms  
© 2007 IXYS CORPORATION, All Rights Reserved  
IXYS REF: IX5187(GQ240N30PB)(76) 12-22-09  
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