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IXFL82N60P

型号：

IXFL82N60P

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

160 K

下载PDF手册
PolarTM HiPerFETTM  
Power MOSFET  
VDSS = 600V  
ID25 = 55A  
RDS(on) 78m  
IXFL82N60P  
(Electrically Isolated Tab)  
trr  
200ns  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Rectifier  
ISOPLUS264  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
600  
600  
V
V
G
VDGR  
D
S
Isolated Tab  
= Drain  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G = Gate  
S = Source  
D
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
55  
A
A
200  
IA  
EAS  
TC = 25C  
TC = 25C  
82  
5
A
J
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150C  
TC = 25C  
20  
V/ns  
W
Features  
625  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
C  
C  
C  
Silicon Chip on Direct-Copper-Bond  
Substrate  
- High Power Dissipation  
- Isolated Mounting Surface  
- 2500V~ Electrical Isolation  
Avalanche Rated  
Low Package Inductance  
Fast Intrinsic Rectifier  
Low RDS(on) and QG  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
FC  
Mounting Force  
40..120 / 9..27  
N/lb.  
VISOL  
50/60 Hz, RMS t = 1 min  
2500  
3000  
V~  
V~  
IISOL 1 mA  
t = 1 s  
Weight  
8
g
Advantages  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
AApplications  
(TJ = 25C Unless Otherwise Specified)  
Min.  
600  
3.0  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
DC-DC Converters  
Battery Chargers  
Switch-Mode and Resonant-Mode  
5.0  
Power Supplies  
AC Motor Control  
High Speed Power Switching  
Appliccation  
200 nA  
IDSS  
25 A  
1 mA  
TJ = 125C  
RDS(on)  
VGS = 10V, ID = 41A, Note 1  
78 m  
DS99531F(8/17)  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXFL82N60P  
Symbol  
Test Conditions  
Characteristic Values  
ISOPLUS264 (IXFL) OUTLINE  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 41A, Note 1  
50  
80  
S
Ciss  
Coss  
Crss  
23  
1490  
200  
nF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
td(on)  
28  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 41A  
RG = 1(External)  
tr  
23  
79  
ns  
ns  
td(off)  
tf  
24  
ns  
1
= Gate  
2,4 = Drain  
= Source  
Qg(on)  
Qgs  
240  
96  
nC  
nC  
nC  
3
VGS = 10V, VDS = 0.5 • VDSS, ID = 41A  
Qgd  
67  
RthJC  
RthCS  
0.20C/W  
C/W  
0.15  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
100  
200  
1.5  
IS  
VGS = 0V  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
trr  
QRM  
IRM  
200 ns  
C  
IF = 25A, -di/dt = 100A/s  
0.6  
6.0  
VR = 100V, VGS = 0V  
A
Note  
1. Pulse test, t 300s, duty cycle, d 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXFL82N60P  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
Fig. 1. Output Characteristics @ TJ = 25oC  
180  
160  
140  
120  
100  
80  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 10V  
8V  
V
= 10V  
8V  
GS  
GS  
7V  
7V  
6V  
5V  
60  
6V  
5V  
40  
20  
0
0
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
5.5  
6
0
5
10  
15  
20  
150  
150  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 41A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 10V  
7V  
GS  
V
= 10V  
GS  
I
= 82A  
D
6V  
I
= 41A  
D
5V  
2
4
6
8
10  
12  
14  
-50  
-25  
0
25  
50  
75  
100  
125  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 41A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs. Case Temperature  
60  
50  
40  
30  
20  
10  
0
3.2  
2.8  
2.4  
2
V
= 10V  
GS  
T = 125oC  
J
T = 25oC  
1.6  
1.2  
0.8  
J
20  
40  
60  
80  
100  
120  
140  
160  
180  
-50  
-25  
0
25  
50  
75  
100  
125  
TC - Degrees Centigrade  
ID - Amperes  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXFL82N60P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
160  
140  
120  
100  
80  
120  
100  
80  
60  
40  
20  
0
T
= - 40oC  
J
T
J
= 125oC  
25oC  
- 40oC  
25oC  
125oC  
60  
40  
20  
0
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
1.3  
40  
0
20  
40  
60  
80  
100  
120  
140  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
250  
200  
150  
100  
50  
10  
9
8
7
6
5
4
3
2
1
0
V
= 300V  
DS  
I
I
= 41A  
D
G
= 10mA  
T
= 125oC  
J
T
= 25oC  
J
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
0
20  
40  
60  
80  
100 120 140 160 180 200 220 240  
QG - NanoCoulombs  
VSD - Volts  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
1,000  
100  
10  
100,000  
10,000  
1,000  
100  
f = 1 MHz  
R
Limit  
DS(on)  
C
C
iss  
100μs  
1ms  
oss  
10ms  
T = 150oC  
= 25oC  
J
DC  
C
T
C
rss  
Single Pulse  
1
10  
100  
1000  
0
5
10  
15  
20  
25  
30  
35  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFL82N60P  
Fig. 13. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_82N60P (9S) 2-01-06  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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