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DXT651Q-13

型号:

DXT651Q-13

品牌:

DIODES[ DIODES INCORPORATED ]

页数:

6 页

PDF大小:

339 K

DXT651Q  
60V NPN LOW SATURATION POWER TRANSISTOR  
Mechanical Data  
Description  
Case: SOT89  
This Bipolar Junction Transistor (BJT) is designed to meet the  
stringent requirements of automotive applications.  
Case Material: Molded Plastic. “Green” Molding Compound.  
UL Flammability Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Finish - Matte Tin Plated Leads, Solderable per  
MIL-STD-202, Method 208  
Features  
BVCEO > 60V  
Weight: 0.052 grams (Approximate)  
IC = 3A High Continuous Collector Current  
ICM up to 6A Peak Pulse Current  
2W Power Dissipation  
Applications  
Low Saturation Voltage VCE(SAT) < 300mV @ 1A  
Complementary PNP Type: DXT751Q  
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note 3)  
Qualified to AEC-Q101 Standards for High Reliability  
PPAP Capable (Note 4)  
Load Management Functions  
Motor Control  
DC-DC / DC-AC Converters  
SOT89  
C
E
C
B
B
C
E
Top View  
Pinout  
Top View  
Device Symbol  
Ordering Information (Notes 4 and 5)  
Product  
DXT651Q-13  
Compliance  
Automotive  
Marking  
KN2  
Reel Size (inches)  
Tape Width (mm)  
Quantity Per Reel  
13  
12  
2,500  
Notes:  
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.  
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"  
and Lead-free.  
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.  
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.  
Marking Information  
SOT89  
KN2 = Product Type Marking Code  
= Manufacturer’s Marking Code  
YWW = Date Code Marking  
Y = Last Digit of Year (ex: 6 = 2016)  
WW = Week Code (01 to 53)  
YWW  
KN2  
1 of 6  
www.diodes.com  
July 2016  
© Diodes Incorporated  
DXT651Q  
Document Number: DS38910 Rev: 1 - 2  
DXT651Q  
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
80  
60  
5
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
V
3
A
Peak Pulse Collector Current  
Peak Base Current  
6
A
ICM  
500  
mA  
IB  
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
Value  
Unit  
(Note 6)  
(Note 7)  
(Note 6)  
(Note 7)  
(Note 8)  
1
2
125  
62.5  
6.0  
Power Dissipation  
W
PD  
Thermal Resistance, Junction to Ambient Air  
C/W  
RθJA  
Thermal Resistance, Junction to Leads  
RθJL  
C/W  
C  
Operating and Storage Temperature Range  
-55 to +150  
TJ, TSTG  
Notes:  
6. For a device surface mounted on 15mm x 15mm x 0.6mm FR-4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is  
measured when operating in steady state condition.  
7. Same as note 6, except the device is mounted on 40mm x 40mm x 1.6mm FR-4 PCB.  
8. Thermal resistance from junction to solder-point (on the exposed collector pad).  
Thermal Characteristics and Derating Information  
120  
100  
80  
60  
40  
20  
0
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
D=0.5  
D=0.2  
Single Pulse  
D=0.05  
D=0.1  
0
25  
50  
75  
100 125 150  
11m 10m 100m  
100  
1
10  
100  
1k  
Temperature (oC)  
Pulse Width (s)  
Transient Thermal Impedance  
Derating Curve  
100  
10  
1
Single Pulse. TA =25oC  
1m 10m 100m  
100  
1
10  
100  
1k  
Pulse Width (s)  
Pulse Power Dissipation  
2 of 6  
www.diodes.com  
July 2016  
© Diodes Incorporated  
DXT651Q  
Document Number: DS38910 Rev: 1 - 2  
DXT651Q  
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
OFF CHARACTERISTICS  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage (Note 9)  
Emitter-Base Breakdown Voltage  
Symbol  
Min  
Typ  
Max  
Unit  
Test Conditions  
IC = 100µA  
80  
60  
5
V
V
V
BVCBO  
BVCEO  
BVEBO  
  
  
  
  
0.1  
10  
IC = 10mA  
IE = 100A  
VCB = 60V  
VCB = 60V, TA = +100°C  
VEB = 4V  
Collector-Base Cutoff Current  
µA  
µA  
  
  
ICBO  
IEBO  
Emitter-Base Cutoff Current  
0.1  
ON CHARACTERISTICS (Note 9)  
0.08  
0.23  
0.3  
0.6  
V
V
IC = 1A, IB = 100mA  
IC = 3A, IB = 300mA  
IC = 1A, IB = 100mA  
VCE = 2V, IC = 1A  
Collector-Emitter Saturation Voltage  
VCE(SAT)  
Base-Emitter Saturation Voltage  
Base-Emitter Turn-On Voltage  
0.85  
0.8  
1.25  
1
V
V
VBE(SAT)  
VBE(ON)  
VCE = 2V, IC = 50mA  
VCE = 2V, IC = 500mA  
VCE = 2V, IC = 1A  
300  
  
70  
100  
80  
200  
200  
185  
120  
DC Current Gain  
hFE  
40  
VCE = 2V, IC = 2A  
SMALL-SIGNAL CHARACTERISTICS  
Transition Frequency  
140  
200  
MHz  
pF  
30  
fT  
VCE = 5V, IC = 100mA, f = 100MHz  
VCB = 10V, f = 1MHz  
Output Capacitance  
Cobo  
tON  
tOFF  
  
  
  
35  
230  
  
ns  
ns  
VCC = 10V. IC = 500mA,  
IB1 = -IB2 = 50mA  
Switching Times  
Note:  
9. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.  
2.5  
2.0  
500  
450  
V
= 2V  
CE  
I
I
= 10mA  
= 8mA  
B
B
400  
350  
300  
250  
200  
150  
100  
I
T
= 150°C  
= 85°C  
A
1.5  
1.0  
T
I
I
= 6mA  
= 4mA  
A
A
B
B
T
= 25°C  
,
T
= -55°C  
0.5  
0.0  
A
I
= 2mA  
B
50  
0
0
1
2
3
4
5
0.001  
0.01  
IC, COLLECTOR CURRENT (A)  
Figure 2 Typical DC Current Gain vs. Collector Current  
0.1  
1
10  
VCE, COLLECTOR EMITTER VOLTAGE (V)  
Figure 1 Typical Collector Current vs. Collector-Emitter Voltage  
3 of 6  
www.diodes.com  
July 2016  
© Diodes Incorporated  
DXT651Q  
Document Number: DS38910 Rev: 1 - 2  
DXT651Q  
0.4  
0.3  
1.2  
1.0  
V
= 2V  
CE  
I /I = 20  
C
B
0.8  
0.6  
0.4  
T
= -55°C  
= 25°C  
A
0.2  
0.1  
T
A
T = 150°C  
A
T
= 85°C  
A
T = 85°C  
A
T
= 25°C  
A
T
= 150°C  
0.2  
A
T
= -55°C  
A
0.0  
0
0.0001  
0.0001  
0.001  
0.01  
0.1  
1
10  
0.001  
0.01  
0.1  
1
10  
IC, COLLECTOR CURRENT (A)  
IC, COLLECTOR CURRENT (A)  
Figure 3 Typical Collector-Emitter Saturation Voltage  
vs. Collector Current  
Figure 4 Typical Base-Emitter Turn-On Voltage  
vs. Collector Current  
100  
80  
)
1.2  
1.0  
0.8  
0.6  
I /I = 20  
C
B
f = 1MHz  
60  
40  
T
= -55°C  
A
T
= 25°C  
= 85°C  
A
0.4  
T
A
20  
0
0.2  
0
T
= 150°C  
A
0
5
10  
VR, REVERSE VOLTAGE (V)  
Figure 6 Typical Output Capacitance Characteristics  
15  
20  
25  
30  
0.0001  
0.001  
0.01  
0.1  
1
10  
V
IC, COLLECTOR CURRENT (A)  
Figure 5 Typical Base-Emitter Saturation Voltage  
vs. Collector Current  
175  
150  
125  
100  
75  
50  
25  
0
V
= 2V  
CE  
f = 100MHz  
0
20  
40  
60  
80  
100  
IC, EMITTER CURRENT (mA)  
Figure 7 Typical Gain-Bandwidth Product vs. Emitter Current  
4 of 6  
www.diodes.com  
July 2016  
© Diodes Incorporated  
DXT651Q  
Document Number: DS38910 Rev: 1 - 2  
DXT651Q  
Package Outline Dimensions  
Please see http://www.diodes.com/package-outlines.html for the latest version.  
D1  
c
SOT89  
Dim Min Max  
Typ  
1.50  
0.56  
0.48  
0.38  
4.50  
H
A
B
1.401.60  
0.50 0.62  
E
B1 0.42 0.54  
c
D
0.35 0.43  
4.40 4.60  
B1  
L
D1 1.62 1.83 1.733  
B
D2 1.61 1.81  
2.40 2.60  
E2 2.05 2.35  
1.71  
2.50  
2.20  
1.50  
4.10  
2.78  
1.05  
E
e
D2  
e
-
-
H
3.95 4.25  
H1 2.63 2.93  
0.90 1.20  
8
°
(
4X)  
L
L1 0.327 0.527 0.427  
0.20 0.40 0.30  
All Dimensions in mm  
H1  
E2  
z
A
L1  
D
z
Suggested Pad Layout  
Please see http://www.diodes.com/package-outlines.html for the latest version.  
X2  
Value  
(in mm)  
1.500  
0.244  
0.580  
0.760  
1.933  
1.730  
3.030  
1.500  
0.770  
4.530  
Dimensions  
C
G
X
X1  
X2  
Y
Y1  
Y2  
Y3  
Y4  
Y3  
Y1  
Y4  
X
G
Y
Y2  
C
X1  
5 of 6  
www.diodes.com  
July 2016  
© Diodes Incorporated  
DXT651Q  
Document Number: DS38910 Rev: 1 - 2  
DXT651Q  
IMPORTANT NOTICE  
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume  
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  
website, harmless against all damages.  
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings  
noted herein may also be covered by one or more United States, international or foreign trademarks.  
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the  
final and determinative format released by Diodes Incorporated.  
LIFE SUPPORT  
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  
A. Life support devices or systems are devices or systems which:  
1. are intended to implant into the body, or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  
labeling can be reasonably expected to result in significant injury to the user.  
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  
failure of the life support device or to affect its safety or effectiveness.  
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its  
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  
Copyright © 2016, Diodes Incorporated  
www.diodes.com  
6 of 6  
www.diodes.com  
July 2016  
© Diodes Incorporated  
DXT651Q  
Document Number: DS38910 Rev: 1 - 2  
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