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IXGP28N120B

型号：

IXGP28N120B

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

5 页

PDF大小：

565 K

下载PDF手册
IXGP 28N120B VCES = 1200 V  
IC25 50 A  
High Voltage IGBT  
=
VCE(sat) = 3.5 V  
tfi(typ) = 160 ns  
TO-220 (IXGP)  
Symbol  
TestConditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
1200  
1200  
V
V
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
C (TAB)  
G
C
E
IC25  
IC110  
ICM  
TC = 25°C  
TC = 110°C  
TC = 25°C, 1 ms  
50  
28  
150  
A
A
A
G = Gate,  
C = Collector,  
E = Emitter,  
TAB = Collector  
SSOA  
V
= 15 V, TVJ = 125°C, RG = 5 Ω  
I
= 60  
A
(RBSOA)  
CGlaE mped inductive load  
@ 0C.8M VCES  
250  
Features  
z
PC  
TC = 25°C  
W
High Voltage IGBT for resonant  
power supplies  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
- Induction heating  
- Rice cookers  
z
International standard package  
JEDEC TO-220  
Maximum Lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
z
z
Low switching losses, low V(sat)  
MOS Gate turn-on  
- drive simplicity  
Md  
Mounting torque (M3.5) (TO-220)  
0.55/5Nm/lb.in.  
Weight  
4
g
Advantages  
z
High power density  
z
Suitable for surface mounting  
z
Easy to mount with 1 screw  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
BVCES  
VGE(th)  
I
= 250 µA , VGE = 0 V  
1200  
2.5  
V
ICC = 250 µA, VCE = VGE  
5
V
ICES  
VCE = VCES, VGE= 0 V  
T = 25°C  
25  
µA  
µA  
TJJ = 125°C  
250  
IGES  
VCE = 0 V, VGE = 20 V  
IC = 28A, VGE = 15 V  
100  
3.5  
nA  
VCE(sat)  
2.9  
2.8  
V
V
TJ = 125°C  
© 2003 IXYS All rights reserved  
DS99139(12/03)  
IXGP 28N120B  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-220 Outline  
IC = 28A; VCE = 10 V,  
18  
25  
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %  
Cies  
Coes  
Cres  
2700  
170  
60  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Qg  
Qge  
Qgc  
92  
15  
30  
nC  
nC  
nC  
IC = 28A, VGE = 15 V, VCE = 0.5 VCES  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
4 - Drain  
td(on)  
tri  
td(off)  
tfi  
30  
20  
180  
160  
2.0  
ns  
ns  
280 ns  
320 ns  
5.0 mJ  
Inductive load, TJ = 25°C  
IC = 28 A, VGE = 15 V  
VCE = 0.8 VCES, RG = Roff = 5 Ω  
Eoff  
td(on)  
tri  
Eon  
td(off)  
tfi  
35  
28  
1.4  
250  
300  
ns  
ns  
mJ  
ns  
ns  
Inductive load, TJ = 125°C  
IC = 28A, VGE = 15 V  
VCE = 0.8 VCES, RG = Roff = 5 Ω  
Eoff  
8.0  
mJ  
RthJC  
RthCK  
0.5 K/W  
K/W  
0.25  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
IXGP 28N120B  
Fig. 1. Output Characteristics  
@ 25 Deg. C  
Fig. 2. Extended Output Characteristics  
@ 25 deg. C  
270  
240  
210  
180  
150  
120  
90  
56  
49  
42  
35  
28  
21  
14  
7
VGE = 15V  
13V  
VGE = 17V  
15V  
11V  
13V  
9V  
7V  
11V  
9V  
60  
30  
7V  
5V  
0
0
0.5  
0.5  
6
1
1.5  
2
2.5  
3
3.5  
4
0
2
4
6
8
10 12 14 16 18 20  
VC E - Volts  
VC E - Volts  
Fig. 3. Output Characteristics  
@ 125 Deg. C  
Fig. 4. Dependence of VCE(sat) on  
Temperature  
56  
49  
42  
35  
28  
21  
14  
7
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
VGE = 15V  
13V  
VGE = 15V  
IC = 56A  
11V  
9V  
7V  
IC = 28A  
IC = 14A  
5V  
0
1
1.5  
2
2.5  
3
3.5  
4
0
25  
50  
75  
100  
125  
150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter voltage  
Fig. 6. Input Admittance  
7
6
5
4
3
2
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = 25ºC  
IC = 56A  
28A  
14A  
TJ = 125ºC  
25ºC  
-40ºC  
7
8
9
10 11 12 13 14 15 16 17  
VG E - Volts  
4
5
6
7
8
9
10  
VG E - Volts  
© 2003 IXYS All rights reserved  
IXGP 28N120B  
Fig. 8. Dependence of Turn-off  
Energy Loss on RG  
Fig. 7. Transconductance  
35  
22  
20  
18  
16  
14  
12  
10  
8
IC = 56A  
30 TJ = -40ºC  
25ºC  
TJ = 125ºC  
VGE = 15V  
VCE = 960V  
125ºC  
25  
20  
15  
10  
5
IC = 28A  
IC = 14A  
6
4
0
2
0
10 20 30 40 50 60 70 80 90 100  
0
10 20 30 40 50 60 70 80 90 100  
I C - Amperes  
R G - Ohms  
Fig. 9. Dependence of Turn-Off  
Energy Loss on IC  
Fig. 10. Dependence of Turn-off  
Energy Loss on Temperature  
20  
18  
16  
14  
12  
10  
8
20  
18  
16  
14  
12  
10  
8
RG = 5Ω  
RG = 5Ω  
RG = 47Ω - - - -  
VGE = 15V  
RG = 47Ω - - - -  
VGE = 15V  
VCE = 960V  
IC = 56A  
VCE = 960V  
TJ = 125ºC  
IC = 28A  
IC = 14A  
6
6
4
4
2
2
TJ = 25ºC  
0
0
10 15 20 25 30 35 40 45 50 55 60  
25 35 45 55 65 75 85 95 105 115 125  
I C - Amperes  
TJ - Degrees Centigrade  
Fig. 11. Dependence of Turn-off  
Switching Time on RG  
Fig. 12. Dependence of Turn-off  
Switching Time on IC  
1400  
1200  
1000  
800  
700  
600  
500  
400  
300  
200  
100  
0
td(off)  
td(off)  
tfi  
- - - - - -  
tfi - - - - - -  
RG = 5Ω  
TJ = 125ºC  
VGE = 15V  
VCE = 960V  
VGE = 15V  
VCE = 960V  
TJ = 125ºC  
TJ = 25ºC  
IC = 56A  
600  
IC = 28A  
IC = 14A  
400  
200  
0
10 20 30 40 50 60 70 80 90 100  
10 15 20 25 30 35 40 45 50 55 60  
R G - Ohms  
I C - Amperes  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
IXGP 28N120B  
Fig. 13. Dependence of Turn-off  
Switching Time on Temperature  
Fig. 14. Gate Charge  
550  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
15  
12  
9
td(off)  
- - - - - -  
RG = 5Ω  
VCE = 600V  
IC = 28A  
tfi  
IC = 14A  
IG = 10mA  
VGE = 15V  
VCE = 960V  
IC = 56A  
6
IC = 28A  
IC = 14A  
3
0
25 35 45 55 65 75 85 95 105 115 125  
0
10 20 30 40 50 60 70 80 90 100  
TJ - Degrees Centigrade  
Q G - nanoCoulombs  
Fig. 15. Capacitance  
10000  
1000  
100  
f = 1 MHz  
C
ies  
C
oes  
C
res  
10  
0
5
10  
15  
20  
25  
30  
35  
40  
VC E - Volts  
Fig. 16. Maximum Transient Thermal Resistance  
1.00  
0.50  
0.10  
1
10  
100  
1000  
Pulse Width - milliseconds  
© 2003 IXYS All rights reserved  
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