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IXFR32N80Q3

型号：

IXFR32N80Q3

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

143 K

下载PDF手册
HiperFETTM  
Power MOSFET  
Q3-Class  
VDSS = 800V  
ID25 = 24A  
RDS(on) 300m  
IXFR32N80Q3  
trr  
300ns  
(Electrically Isolated Tab)  
N-Channel Enhancement Mode  
Fast Intrinsic Rectifier  
Avalanche Rated  
ISOPLUS247  
E153432  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
800  
800  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G
Isolated Tab  
D
S
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
24  
A
A
80  
G = Gate  
S = Source  
D
= Drain  
IA  
EAS  
TC = 25C  
TC = 25C  
32  
3
A
J
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150C  
TC = 25C  
50  
V/ns  
W
500  
Features  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
C  
C  
C  
Silicon Chip on Direct-Copper Bond  
(DCB) Substrate  
Isolated Mounting Surface  
Low Intrinsic Gate Resistance  
2500V~ Electrical Isolation  
Fast Intrinsic Rectifier  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
VISOL  
50/60 Hz, 1 Minute  
Mounting Force  
2500 V  
Avalanche Rated  
FC  
20..120/4.5..27  
N/lb  
g
Low Package Inductance  
Weight  
5
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
800  
3.0  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
V
V
DC-DC Converters  
Battery Chargers  
Switch-Mode and Resonant-Mode  
VDS = VGS, ID = 4mA  
VGS = 30V, VDS = 0V  
VDS = 0.8 • VDSS, VGS = 0V  
6.0  
200 nA  
Power Supplies  
DC Choppers  
Temperature and Lighting Controls  
IDSS  
50 A  
2 mA  
TJ = 125C  
RDS(on)  
VGS = 10V, ID = 16A, Note 1  
300 m  
DS100362B(01/14)  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXFR32N80Q3  
Symbol  
Test Conditions  
Characteristic Values  
ISOPLUS247 (IXFR) Outline  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 16A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
Gate Input Resistance  
16  
26  
S
Ciss  
Coss  
Crss  
6940  
700  
63  
pF  
pF  
pF  
RGi  
0.16  
38  
td(on)  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 16A  
RG = 1(External)  
tr  
13  
45  
ns  
ns  
A1  
b
E
td(off)  
c
b2  
b1  
tf  
10  
ns  
1 = Gate  
2,4 = Drain  
3 = Source  
Qg(on)  
Qgs  
140  
48  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 16A  
Qgd  
63  
RthJC  
RthCS  
0.25C/W  
C/W  
0.15  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
32  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
128  
1.4  
trr  
QRM  
IRM  
300 ns  
C  
IF = 16A, -di/dt = 100A/s  
1.4  
12.0  
VR = 100V, VGS = 0V  
A
Note  
1. Pulse test, t 300s, duty cycle, d 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXFR32N80Q3  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
32  
28  
24  
20  
16  
12  
8
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 10V  
9V  
GS  
V
= 10V  
9V  
GS  
8V  
7V  
8V  
7V  
4
0
0
5
10  
15  
20  
25  
30  
0
1
2
3
4
5
6
7
8
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 16A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
32  
28  
24  
20  
16  
12  
8
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
V
= 10V  
8V  
GS  
V
= 10V  
GS  
I
= 32A  
D
I
= 16A  
D
7V  
6V  
4
0
0
2
4
6
8
10  
12  
14  
16  
18  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 16A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
V
= 10V  
24  
20  
16  
12  
8
GS  
T = 125ºC  
J
T = 25ºC  
J
4
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
10  
20  
30  
40  
50  
60  
70  
80  
ID - Amperes  
TC - Degrees Centigrade  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXFR32N80Q3  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
60  
50  
40  
30  
20  
10  
0
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
T
= - 40ºC  
J
25ºC  
125ºC  
T
J
= 125ºC  
25ºC  
- 40ºC  
0
4
4.5  
5
5.5  
6
6.5  
7
7.5  
8
8.5  
9
9.5  
1.2  
40  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
VGS - Volts  
ID - Amperes  
Fig. 10. Gate Charge  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
16  
14  
12  
10  
8
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 400V  
DS  
I
I
= 16A  
D
G
= 10mA  
6
T
= 125ºC  
J
T
= 25ºC  
4
J
2
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
0
50  
100  
150  
200  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
100  
10  
1
100,000  
10,000  
1,000  
100  
= 1 MHz  
f
R
Limit  
DS(on)  
25µs  
C
iss  
100µs  
C
C
oss  
rss  
T = 150ºC  
J
T
C
= 25ºC  
1ms  
Single Pulse  
10  
0
5
10  
15  
20  
25  
30  
35  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFR32N80Q3  
Fig. 13. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
Pulse Width - Seconds  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_32N80Q3(R8) 7-13-11  
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