NPN SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ISSUE 2 MARCH 1994
ZTX458
FEATURES
*
*
*
400 Volt VCEO
0.5 Amp continuous current
Ptot= 1 Watt
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
VALUE
UNIT
V
Collector-Base Voltage
400
Collector-Emitter Voltage
400
V
Emitter-Base Voltage
5
V
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
300
1
mA
W
Ptot
Tj:Tstg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at T
= 25°C).
amb
PARAMETER
SYMBOL MIN.
V(BR)CBO 400
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
IC=100µA
IC=10mA*
IE=100µA
VCB=320V
VCE=320V
VEB=4V
Collector-Emitter
Breakdown Voltage
VCEO(sus) 400
V
Emitter-Base
Breakdown Voltage
V(BR)EBO
ICBO
5
V
Collector Cut-Off
Current
100
100
100
nA
nA
nA
Collector Cut-Off
Current
ICES
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
VBE(sat)
VBE(on)
0.2
0.5
V
V
IC=20mA, IB=2mA
IC=50mA, IB=6mA
Base-Emitter
Saturation Voltage
0.9
V
IC=50mA, IB=5mA
Base-Emitter
Turn On Voltage
0.9
V
IC=50mA, VCE=10V
Static Forward Current hFE
Transfer Ratio
100
100
15
IC=1mA, VCE=10V
IC=50mA, VCE=10V
IC=100mA, VCE=10V*
300
Transition Frequency
fT
50
MHz
pF
IC=10mA, VCE=20V
f=20MHz
Collector-Base
Breakdown Voltage
Cobo
5
VCB=20V, f=1MHz
3-182
