VUO 25
IdAV
=
25 A
Three Phase Rectifier Bridge
VRRM = 800-1800 V
-
+
VRSM
VDSM
VRRM
VDRM
Type
~
~
V
V
~
~
~
900
1300
1500
1700
1900
800
1200
1400
1600
1800
VUO 25-08NO8
VUO 25-12NO8
VUO 25-14NO8
VUO 25-16NO8
VUO 25-18NO8
~
+
-
Features
Symbol
Conditions
Maximum Ratings
• Package with ¼" fast-on terminals
• Isolation voltage 3000 V~
• Planar passivated chips
• Blocking voltage up to 1800 V
• Low forward voltage drop
• UL registered E 72873
IdAV
IdAVM
TC = 85°C, module
TC = 63°C, module
20
25
A
A
IFSM
TVJ = 45°C; t = 10 ms (50 Hz)
380
400
A
A
VR = 0
t = 8.3 ms (60 Hz)
TVJ = TVJM
VR = 0
;
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
360
400
A
A
A2s
A2s
A2s
A2s
Applications
I2t
TVJ = 45°C; t = 10 ms (50 Hz)
725
750
• Supplies for DC power equipment
• Input rectifiers for PWM inverter
• Battery DC power supplies
VR = 0
t = 8.3 ms (60 Hz)
TVJ = TVJM
VR = 0
;
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
650
650
• Field supply for DC motors
TVJ
TVJM
Tstg
-40...+150
150
-40...+150
°C
°C
°C
Advantages
• Easy to mount with one screw
• Space and weight savings
• Improved temperature & power cycling
VISOL
50/60 Hz, RMS t = 1 min
IISOL < 1 mA t = 1 s
2500
3000
V~
V~
Md
Mounting torque (M5)
(10-32 UNF)
2 10ꢀ
18 10ꢀ lb.in.
Nm
Dimensions in mm (1 mm = 0.0394“)
Weight
Typ.
22
g
6.3 x 0.8
Symbol
IR
Conditions
Characteristic Values
VR = VRRM
TVJ = 25°C
TVJ = TVJM
0.3
5.0
mA
mA
VF
IF = 150 A
TVJ = 25°C
2.2
V
VT0
rt
For power-loss calculations only
0.85
12
V
mW
RthJC
per diode; 120° el.
per module
per diode; 120° el.
per module
9.30 K/W
1.55 K/W
10.20 K/W
1.70 K/W
D
E
RthJH
dS
dA
a
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
12.7
9.4
mm
mm
B
50 m/s2
A
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
© IXYS All rights reserved
20100303a
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