NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 3 - NOVEMBER 1995
ZTX696B
FEATURES
*
*
*
180 Volt VCEO
Gain of 500 at IC=100mA
Very low saturation voltage
APPLICATIONS
*
*
*
*
Darlington replacement
Battery powered circuits
Motor drivers
C
B
E
E-Line
Relay / solenoid drivers
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
180
180
5
V
V
1
A
Continuous Collector Current
Practical Power Dissipation *
IC
0.5
1.5
A
Ptotp
Ptot
W
Power Dissipation at Tamb=25°C
derate above 25°C
1
5.7
W
mW/°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
SYMBOL MIN. TYP.
MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
180
180
5
V
V
V
IC=100µA
IC=10mA*
IE=100µA
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ICBO
0.1
0.1
VCB=145V
µA
µA
IEBO
VEB=4V
Collector-Emitter Saturation
Voltage
VCE(sat)
0.2
0.2
0.25
V
V
V
IC=50mA, IB=0.5mA*
IC=100mA, IB=2mA*
IC=200mA, IB=5mA*
Base-Emitter
Saturation Voltage
VBE(sat)
VBE(on)
hFE
0.9
0.9
V
IC=200mA, IB=5mA*
Base-Emitter
Turn-On Voltage
V
IC=200mA, VCE=5V*
Static Forward Current
Transfer Ratio
500
150
IC=100mA, VCE=5V*
IC=200mA, VCE=5V*
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