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3SK272

型号:

3SK272

品牌:

PANASONIC[ PANASONIC ]

页数:

4 页

PDF大小:

170 K

High Frequency FETs  
3SK272  
GaAs N-Channel MES FET  
For VHF-UHF amplification  
unit: mm  
2.1±0.1  
Features  
0.425  
1.25±0.10  
0.425  
Low noise-figure (NF)  
Large power gain PG  
S-mini type package, allowing downsizing of the sets and uto-  
matic insertion through the tape/magazine packing.  
Absolute Maximum Ratings (Ta = 5°C)  
Parameter  
Drain to Source voltage  
Gate 1 to Source voltage  
Gate 2 to Source voltage  
Drain current  
Symbol  
VDS  
VG1S  
S  
ID  
Ra
Unit  
V
13  
0.2±01  
6  
V
1: Drain  
2: Source  
3: Gate1  
4: Gate2  
6  
50  
mA  
mA  
mA  
mW  
°C  
EIAJ: SC-82  
S-Mini Type Package (4-pin)  
Gate 1 current  
IG1  
Gate 2 current  
IG2  
1
150  
Marking Symbl: DU  
Allowable power issipation  
Channel tempeature  
Storage temeratur
PD  
Tch  
150  
Tstg  
5 to +150  
°C  
EletricaChaacteristics (Ta = 25°C)  
Parameer  
Draiut-ofcurrent  
Gaent  
Gate 1 ent  
Gate 2 cut-ocurrent  
Drain cut-off current  
Symbol  
IDSS  
Conditions  
min  
typ  
max  
35  
Unit  
mA  
µA  
µA  
µA  
µA  
V
VD= 5V, VG1S = 0, VG2S = 0  
VG2D = 13V (G1, S = Open)  
8.5  
IG2DO  
IG1SS  
IG2SS  
IDSX  
50  
V
DS = VG2S = 0, VG1S = 6V  
20  
20  
50  
VDS = VG1S = 0, VG2S = 6V  
VDS = 13V, VG1S = 3.5V, VG2S = 0  
VDS = 5V, VG2S = 0, ID = 200µA  
VDS = 5V, VG1S = 0, ID = 200µA  
VDS = 5V, ID = 10mA, VG2S = 1.5V, f = 1kHz  
Gate 1 to Source cut-off voltage VG1SC  
Gate 2 to Source cut-off voltage VG2SC  
3.5  
3.5  
V
Forward transfer admittance  
| Yfs |  
18  
23  
0.4  
0.3  
0.02  
16  
mS  
pF  
Input capacitance (Common Source) Ciss  
Output capacitance (Common Source) Coss  
Reverse transfer capacitance (Common Source) Crss  
2
VDS = V, VG1S = VG2S = 6V  
1.2  
pF  
= 1MHz  
0.04  
pF  
Power gain  
PG  
NF  
GR  
VDS = 5V, ID = 10mA  
10  
37  
dB  
dB  
dB  
Noise figure  
Gain reduction  
VG2S = 1.5V, f = 800MHz  
VDS = 5V, VAGC = 1.5V/3.5V, f = 800MHz  
1.8  
45  
2.8  
1
High Frequency FETs  
3SK272  
PD  
Ta  
ID VDS  
ID  
VG1S  
200  
175  
150  
125  
100  
75  
36  
30  
24  
18  
12  
6
48  
40  
32  
24  
16  
8
VG2S=0  
Ta=25˚C  
VDS=5V  
Ta=25˚C  
VG2S=1.0V  
VG1S=0V  
– 0.3V  
0.5V  
0V  
– 0.6V  
– 0.5V  
50  
– 0.9V  
–1.2V  
–1.0V  
25  
0
0
0
0
20 40 60 80 100 120 140 160  
0
2
4
6
8
10  
12  
–2.4 –2.0 –1.6 –1.2 – 0.8 – 0.4  
4
(
)
(
V
)
(
V
)
Ambient temperature Ta ˚C  
Drain to source voltage VDS  
Gate 1 to source voltage VG1S  
ID  
VG2S  
| Yfs | VG1S  
Ciss, Coss  
VDS  
48  
40  
32  
24  
16  
8
48  
40  
32  
24  
16  
8
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
VDS=5V  
f=1kHz  
Ta=25˚C  
VG1S=VG2S=–6V  
f=1MHz  
Ta=25˚C  
V
DS=5V  
Ta=25˚C  
Ciss  
VG1S=1.0V  
VG2S=1.5V  
0.5V  
Coss  
0V  
– 0.5V  
1.0V  
0.5V  
0V  
– 1.0V  
0
0
–3  
–2.4 –2.0 –1.6 –1.2 – 0.8 – 0.4  
0
–2  
–1  
0
1
2
3
0.1  
0.3  
1
3
10  
30  
100  
(
V
)
( )  
V
(
V
)
Gate 2 to source voltage VG2S  
Gate 1 to source voltage VG1S  
Drain to source voltage VDS  
PG  
VG1S  
NF  
VG1S  
PG  
VG2S  
24  
20  
16  
12  
8
12  
10  
8
60  
40  
VDS=5V  
f=800MHz  
Ta=25˚C  
VDS=5V  
f=800MHz  
Ta=25˚C  
VDS=5V  
f=800MHz  
Ta=25˚C  
VG2S=1.5V  
1.0V  
20  
0.5V  
0V  
6
0
VG2S=1.5V  
4
–20  
–40  
–60  
1.0V  
0.5V  
0V  
4
2
0
0
–1.6 –1.2 – 0.8 – 0.4  
0
0.4  
0.8  
–1.6 –1.2 – 0.8 – 0.4  
0
0.4  
0.8  
–6  
–4  
–2  
0
2
4
6
(
V
)
(
V
)
(
V
)
Gate 1 to source voltage VG1S  
Gate 1 to source voltage VG1S  
Gate 2 to source voltage VG2S  
2
High Frequency FETs  
3SK272  
ID  
VG1S  
30  
24  
18  
12  
6
VDS=5V  
VG2S=0  
Ta=25˚C  
75˚C  
–25˚C  
0
–2.0  
–1.6  
–1.2  
– 0.8 – 0.4  
0
(
V
)
Gate 1 to source voltage VG1S  
3
Request for your special attention and precautions in using the technical information and  
semiconductors described in this book  
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and  
regulations of the exporting country, especially, those with regard to security export control, must be observed.  
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples  
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other  
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other  
company which may arise as a result of the use of technical information described in this book.  
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office  
equipment, communications equipment, measuring instruments and household appliances).  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support  
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-  
ucts may directly jeopardize life or harm the human body.  
Any applications other than the standard applications intended.  
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-  
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product  
Standards in advance to make sure that the latest specifications satisfy your requirements.  
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions  
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute  
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any  
defect which may arise later in your equipment.  
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure  
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire  
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.  
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,  
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which  
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.  
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita  
Electric Industrial Co., Ltd.  
厂商 型号 描述 页数 下载

ETC

3SK101 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | MICRO -X\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | MICRO-X ] 1 页

ETC

3SK102 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | MICRO -X\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | MICRO-X ] 1 页

ETC

3SK107 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 11 页

ETC

3SK107E 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 11 页

ETC

3SK107F 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 11 页

ETC

3SK107G 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 11 页

ETC

3SK108 晶体管| MOSFET | N沟道\n[ TRANSISTOR | MOSFET | N-CHANNEL ] 1 页

ETC

3SK108Q 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 1 页

ETC

3SK108R 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 1 页

ETC

3SK108S 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 1 页

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