IXGC 12N60C
IXGC 12N60CD1
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
ISOPLUS 220 Outline
IC = IT; VCE = 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
7
11
S
Cies
Coes
Cres
860
64
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IT, VGE = 15 V, VCE = 0.5 VCES
15
Qg
32
10
10
nC
nC
nC
Qge
Qgc
td(on)
tri
td(off)
tfi
20
20
ns
ns
ns
ns
mJ
Inductive load, TJ = 25°C
IC = IT, V = 15 V, L = 300 µH
V
CE = 0.8G•E VCES, RG = Roff = 18 Ω
60
Remarks: Switching times may increase
for V (Clamp) > 0.8 • VCES, higher TJ or
increCaEsed RG
55
Eoff
0.09
td(on)
tri
20
20
ns
ns
mJ
ns
ns
Inductive load, TJ = 125°C
IC = IT, VGE = 15 V, L = 300 µH
Eon
td(off)
tfi
0.15
VCE = 0.8 • VCES, RG = Roff = 18 Ω
85 180
85 180
Remarks: Switching times may increase
for V (Clamp) > 0.8 • VCES, higher TJ or
increCaEsed RG
Eoff
0.27 0.60 mJ
Notes:
RthJC
RthCK
1.6 K/W
1. Lead 1 = Gate
0.25
K/W
2. Lead 2 = Collector
3. Lead 3 = Emitter
4. Back surface 4 is electrically
isolated from leads 1, 2 & 3
Note: IT = 12A
ReverseDiode(FRED)(IXGC12N60CD1ONLY)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
VF
TestConditions
min. typ. max.
IF = 15A; TVJ = 150°C
1.7
V
V
TVJ 25°C
=
2.5
2.5
IRM
V = 100 V; I =25A; -diF/dt = 100 A/µs
L R< 0.05 µH;F TVJ = 100°C
2
A
trr
IF = 1 A; -di/dt = 50 A/µs;
VR = 30 V TJ = 25°C
35
ns
RthJC
Diode
1.6 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
