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IXGQ90N33TCD4

型号：

IXGQ90N33TCD4

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

124 K

下载PDF手册
Preliminary Technical Information  
VCES  
ICP  
= 330V  
= 360A  
Plasma Display  
Power IGBT  
IXGQ90N33TCD4  
VCE(sat) ≤ 1.80V  
Trench Gate High Speed  
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
TO-3P (IXGQ)  
TJ = 25°C to 150°C  
330  
V
V
VGEM  
±30  
IC25  
ICP  
TC = 25°C, IGBT chip capability  
TJ ≤ 150°C, tp ≤ 1μs  
TJ ≤ 150°C, tp ≤ 1μs  
Lead current limit  
90  
360  
45  
A
A
A
A
G
C
E
(TAB)  
IDP  
IC(RMS)  
75  
G = Gate  
E = Emitter  
C
= Collector  
Pd  
TC = 25°C  
200  
W
TAB = Collector  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
°C  
°C  
TJM  
Tstg  
TL  
-55 ... +150  
300  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10 seconds  
Features  
TSOLD  
260  
•International standard package  
•Low VCE(sat)  
Md  
Mounting torque  
1.13/10  
5.5  
Nm/lb.in.  
g
- for minimum on-state conduction  
losses  
Weight  
•Fast switching  
Applications  
• PDP Screen Drivers  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
BVCES  
VGE(th)  
IC = 250μA , VGE = 0V  
IC = 250μA , VCE = VGE  
330  
3.0  
V
V
5.0  
ICES  
VCE = 330V  
VGE = 0V  
1 μA  
200 μA  
TJ = 125°C  
IGES  
VCE = 0V, VGE = ± 20V  
±200 nA  
VCE(sat)  
VGE = 15V, IC = 20A, Note 1  
IC = 45A  
1.40  
1.80  
V
V
V
1.54  
1.54  
1.82  
1.95  
TJ = 125°C  
TJ = 125°C  
IC = 90A  
V
V
© 2007 IXYS CORPORATION, All rights reserved  
DS99842A(8/07)  
IXGQ90N33TCD4  
TO-3P (IXGQ) Outline  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 45A, VCE = 10V  
40  
65  
S
Cies  
Coes  
Cres  
2320  
180  
21  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
Qg(on)  
Qge  
69  
15  
13  
nC  
nC  
nC  
IC = 45A, VGE = 15V, VCE = 0.5 • VCES  
Qgc  
td(on)  
tri  
td(off)  
tfi  
13  
30  
38  
49  
ns  
ns  
ns  
ns  
Resistive load, TJ = 25°C  
IC = 45A, VGE = 15V  
VCE = 240V, RG = 5Ω  
td(on)  
tri  
td(off)  
tfi  
13  
28  
50  
74  
ns  
ns  
ns  
ns  
Resistive load, TJ = 125°C  
IC = 45A, VGE = 15V  
VCE = 240V, RG = 5Ω  
RthJC  
RthCS  
0.62 °C/W  
°C/W  
0.21  
Protection Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
VF  
IF = 15A, VGE = 0V  
1.6  
V
RthJC  
2.5 °C/W  
Note 1: Pulse test, t ≤ 300μs; duty cycle, ≤ 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGQ90N33TCD4  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
300  
270  
240  
210  
180  
150  
120  
90  
V
= 15V  
GE  
13V  
11V  
V
= 15V  
GE  
13V  
11V  
9V  
7V  
9V  
7V  
60  
30  
0
0
-50  
4
1
2
3
4
5
6
7
8
9
125  
7
10  
150  
7.5  
0
0
5
0.2 0.4 0.6 0.8  
1
1.2 1.4 1.6 1.8  
2
2.2  
2.2  
15  
VCE - Volts  
VCE - Volts  
Fig. 3. Output Characteristics  
@ 125ºC  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
1.4  
1.3  
1.2  
1.1  
1
V
= 15V  
GE  
V
= 15V  
GE  
13V  
11V  
9V  
I
= 90A  
C
I
= 45A  
= 23A  
C
C
7V  
0.9  
0.8  
0.7  
I
5V  
-25  
0
25  
50  
75  
100  
0.2 0.4 0.6 0.8  
1
1.2 1.4 1.6 1.8  
2
TJ - Degrees Centigrade  
VCE - Volts  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
140  
120  
100  
80  
3.2  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
T
J
= 25ºC  
I
= 90A  
C
T
J
= 125ºC  
25ºC  
- 40ºC  
45A  
23A  
60  
40  
20  
0
4.5  
5
5.5  
6
6.5  
6
7
8
9
10  
11  
12  
13  
14  
VGE - Volts  
VGE - Volts  
© 2007 IXYS CORPORATION, All rights reserved  
IXGQ90N33TCD4  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
16  
14  
12  
10  
8
T = - 40ºC  
J
V
= 165V  
CE  
I
I
= 45A  
C
G
25ºC  
= 10 mA  
125ºC  
6
4
2
0
0
20  
40  
60  
80  
100  
120  
140  
0
10  
20  
30  
40  
50  
60  
70  
IC - Amperes  
QG - NanoCoulombs  
Fig. 9. Reverse-Bias Safe Operating Area  
Fig. 10. Capacitance  
10,000  
1,000  
100  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
f = 1 MHz  
C
ies  
C
oes  
T = 150ºC  
J
R
= 20  
Ω
dV / dT < 10V / ns  
G
C
res  
10  
50  
100  
150  
200  
250  
300  
350  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Forward-Bias Safe Operating Area  
1000  
100  
10  
1.00  
0.10  
0.01  
V
Limit  
CE  
(sat)  
1µs  
10µs  
100µs  
1ms  
T = 150ºC  
J
T
= 25ºC  
Single Pulse  
C
1
1
10  
100  
1000  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
VCE - Volts  
I
Pulse Width - Seconds  
IXGQ90N33TCD4  
Fig. 13. Resistive Turn-on Rise Time  
vs. Junction Temperature  
Fig. 14. Resistive Turn-on Rise Time  
vs. Collector Current  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
RG = 5  
Ω
RG = 5  
Ω
VGE = 15V  
VGE = 15V  
CE = 240V  
VCE = 240V  
V
TJ = 25ºC  
I C = 90A  
TJ = 125ºC  
I C = 45A  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
20 25 30 35 40 45 50 55 60 65 70 75 80 85 90  
IC - Amperes  
TJ - Degrees Centigrade  
Fig. 16. Resistive Turn-off Switching Times  
vs. Junction Temperature  
Fig. 15. Resistive Turn-on Switching Times  
vs. Gate Resistance  
75  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
14  
13  
12  
95  
90  
85  
80  
75  
70  
65  
60  
55  
50  
45  
60  
57  
54  
51  
48  
45  
42  
39  
36  
33  
30  
70  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
- - - -  
td(off)  
RG = 5 , VGE = 15V  
tf  
- - - -  
td(on)  
TJ = 125ºC, VGE = 15V  
tr  
Ω
VCE = 240V  
VCE = 240V  
I C = 90A, 45A  
I C = 90A, 45A  
4
6
8
10  
12  
14  
16  
18  
20  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Resistive Turn-off Switching Times  
vs. Gate Resistance  
Fig. 17. Resistive Turn-off Switching Times  
vs. Collector Current  
120  
110  
100  
90  
60  
57  
54  
51  
48  
45  
42  
39  
36  
33  
30  
120  
115  
110  
105  
100  
95  
130  
120  
110  
100  
90  
- - - -  
td(off)  
TJ = 125ºC, VGE = 15V  
tf  
- - - -  
td(off)  
RG = 5 , VGE = 15V  
tf  
Ω
VCE = 240V  
TJ = 125ºC  
VCE = 240V  
I C = 45A  
80  
70  
80  
60  
90  
70  
I C = 90A  
50  
85  
60  
TJ = 25ºC  
80  
50  
40  
75  
40  
30  
70  
30  
20  
4
6
8
10  
12  
14  
16  
18  
20  
20 25 30 35 40 45 50 55 60 65 70 75 80 85 90  
IC - Amperes  
RG - Ohms  
© 2007 IXYS CORPORATION, All rights reserved  
IXYS REF:G_90N33TC(4G)5-30-07-C  
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