IXFR 44N50F
Symbol
gfs
TestConditions
Characteristic Values
(T = 25°C, unless otherwise specified)
ISOPLUS247OUTLINE
J
min. typ. max.
V
= 10 V; I = I
T
Notes 2, 3
22
32
S
DS
D
Ciss
Coss
Crss
5500
990
pF
pF
pF
V
= 0 V, V = 25 V, f = 1 MHz
GS
DS
330
td(on)
tr
td(off)
tf
23
18
53
8
ns
ns
ns
ns
V
= 10 V, V = 0.5 V , I = I
T
GS
DS
DSS
D
R = 1 Ω (External), Notes 2, 3
G
Qg(on)
Qgs
162
56
nC
nC
V
Notes 2, 3
= 10 V, V = 0.5 V , I = I
DS DSS D T
GS
Qgd
70
nC
0.32 K/W
K/W
RthJC
RthCK
0.15
Source-DrainDiode
Characteristic Values
(T = 25°C, unless otherwise specified)
J
Symbol
TestConditions
= 0 V
min. typ. max.
IS
V
44
164
1.5
A
A
V
GS
ISM
VSD
Repetitive; Note 1
I = I , V = 0 V, Notes 2, 3
F
T
GS
trr
250
ns
µC
A
QRM
IRM
1.0
8
I = 25A,-di/dt = 100 A/µs, V = 100 V
F
R
Note: 1. Pulse width limited by T
2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
3. I = 22
JM
T
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
