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IXFA180N10T2-TRL

型号：

IXFA180N10T2-TRL

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

254 K

下载PDF手册
TrenchT2TM HiperFETTM  
Power MOSFET  
VDSS = 100V  
ID25 = 180A  
RDS(on) 6m  
IXFA180N10T2  
IXFP180N10T2  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Rectifier  
TO-263  
(IXFA)  
G
S
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TO-220  
(IXFP)  
TJ = 25C to 175C  
100  
100  
V
V
VDGR  
TJ = 25C to 175C, RGS = 1M  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
G
D
S
D (Tab)  
ID25  
IL(RMS)  
IDM  
TC = 25C (Chip Capability)  
External Lead Current Limit  
TC = 25C, Pulse Width Limited by TJM  
180  
120  
450  
A
A
A
G = Gate  
D
= Drain  
S = Source Tab = Drain  
IA  
TC = 25C  
TC = 25C  
90  
A
EAS  
750  
mJ  
dV/dt  
PD  
IS IDM, VDD VDSS,TJ 175C  
TC = 25C  
15  
V/ns  
W
Features  
480  
International Standard Packages  
175°C Operating Temperature  
High Current Handling Capability  
Fast Intrinsic Rectifier  
Dynamic dV/dt Rated  
Low RDS(on)  
TJ  
-55 ... +175  
175  
C  
C  
C  
TJM  
Tstg  
-55 ... +175  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Advantages  
FC  
Mounting Force (TO-263)  
Mounting Torque (TO-220)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
Md  
Easy to Mount  
Space Savings  
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
High Power Density  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
Synchronous Rectification  
DC-DC Converters  
Battery Charges  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC Choppers  
(TJ = 25C Unless Otherwise Specified)  
Min. Typ.  
100  
2.0  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250A  
VDS = VGS, ID = 250A  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
4.0  
           200 nA  
AC Motor Drives  
Uninterruptible Power Supplies  
High Speed Power Switching  
Applications  
IDSS  
10 A  
TJ = 150C  
VGS = 10V, ID = 50A, Notes 1 & 2  
750 A  
RDS(on)  
6 m  
DS100266E(11/18)  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXFA180N10T2  
IXFP180N10T2  
Symbol  
Test Conditions  
Characteristic Values  
TO-263 Outline  
A
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
E
E1  
C2  
L1  
L2  
gfs  
VDS = 10V, ID = 60A, Note 1  
50  
88  
S
D1  
D
4
H
A1  
Ciss  
Coss  
Crss  
10.5  
945  
100  
nF  
pF  
pF  
1
3
2
VGS = 0V, VDS = 25V, f = 1MHz  
b
b2  
L3  
c
e
e
0.43 [11.0]  
0  
0.34 [8.7]  
td(on)  
tr  
td(off)  
tf  
21  
37  
34  
13  
ns  
ns  
ns  
ns  
Resistive Switching Times  
0.66 [16.6]  
A2  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 90A  
1 - Gate  
2,4 - Drain  
3 - Source  
0.20 [5.0]  
0.10 [2.5]  
0.12 [3.0]  
0.06 [1.6]  
RG = 2(External)  
Qg(on)  
Qgs  
185  
48  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 90A  
Qgd  
52  
RthJC  
RthCS  
0.31 C/W  
C/W  
TO-220  
0.50  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
180  
720  
1.3  
IS  
VGS = 0V  
A
A
V
TO-220 Outline  
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 100A, VGS = 0V, Note 1  
A
E
oP  
A1  
H1  
Q
trr  
66  
5.8  
190  
ns  
A
D2  
E1  
D
IF = 90A, VGS = 0V,  
IRM  
QRM  
D1  
-di/dt = 100A/s, VR = 50V  
nC  
A2  
EJECTOR  
PIN  
L1  
L
3X b  
3X b2  
ee  
c
e1  
Notes: 1. Pulse test, t 300s; duty cycle, d  2%.  
1 - Gate  
2,4 - Drain  
3 - Source  
2. On through-hole packages, RDS(on) Kelvin test contact  
location must be 5mm or less from the package body.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXFA180N10T2  
IXFP180N10T2  
Fig. 1. Output Characteristics @ TJ = 25oC  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
350  
300  
250  
200  
150  
100  
50  
180  
160  
140  
120  
100  
80  
V
= 15V  
V
= 15V  
GS  
GS  
10V  
8V  
10V  
9V  
8V  
7V  
6V  
7V  
6V  
5V  
60  
40  
20  
5V  
0
0
0
0
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
0
1
2
3
4
5
6
7
8
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 90A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150oC  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
180  
160  
140  
120  
100  
80  
V
= 15V  
GS  
10V  
9V  
8V  
V
= 10V  
GS  
7V  
6V  
I
= 180A  
D
I
= 90A  
D
60  
40  
5V  
20  
0
0.5  
1
1.5  
2
2.5  
3
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 90A Value vs.  
Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
140  
120  
100  
80  
V
= 10V  
15V  
GS  
T = 175oC  
J
External Lead Current Limit  
60  
40  
T = 25oC  
J
20  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
40  
80  
120  
160  
200  
240  
280  
320  
360  
ID - Amperes  
TC - Degrees Centigrade  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXFA180N10T2  
IXFP180N10T2  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
160  
140  
120  
100  
80  
200  
180  
160  
140  
120  
100  
80  
T
= - 40oC  
J
V
= 10V  
DS  
V
= 10V  
DS  
25oC  
150oC  
T
J
= 150oC  
25oC  
- 40oC  
60  
60  
40  
40  
20  
20  
0
0
3.0  
0.3  
0
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
1.3  
40  
0
0
1
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
180  
100  
ID - Amperes  
VGS - Volts  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
300  
250  
200  
150  
100  
50  
10  
9
8
7
6
5
4
3
2
1
0
V
= 50V  
DS  
I
I
= 90A  
D
G
= 10mA  
T
J
= 150oC  
T
= 25oC  
J
0
20  
40  
60  
80  
100  
120  
140  
160  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
QG - NanoCoulombs  
VSD - Volts  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
1000  
100  
10  
100,000  
10,000  
1,000  
100  
100μs  
25μs  
= 1 MHz  
f
R
Limit  
DS(on)  
1ms  
10ms  
C
C
iss  
Lead Current Limit  
100ms  
oss  
DC  
T
= 175oC  
= 25oC  
J
C
rss  
T
C
Single Pulse  
1
10  
10  
5
10  
15  
20  
25  
30  
35  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFA180N10T2  
IXFP180N10T2  
Fig. 14. Resistive Turn-on Rise Time vs.  
Drain Current  
Fig. 13. Resistive Turn-on Rise Time vs.  
Junction Temperature  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
R
= 2Ω , V = 10V  
GS  
G
R
V
= 2Ω , V = 10V  
G
GS  
V
= 50V  
DS  
= 50V  
DS  
T
= 25oC  
J
I
= 90A  
D
I
= 45A  
D
T
= 125oC  
J
0
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
90  
100  
110  
120  
130  
140  
150  
160  
170  
180  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 16. Resistive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 15. Resistive Turn-on Switching Times vs.  
Gate Resistance  
20  
19  
18  
17  
16  
15  
14  
13  
26  
25  
24  
23  
22  
21  
20  
19  
19  
46  
t r  
td(on)  
18  
17  
16  
15  
14  
13  
12  
11  
10  
44  
42  
40  
38  
36  
34  
32  
30  
28  
t f  
td(off)  
TJ = 125oC, V = 10V  
GS  
R
G
= 2Ω, V = 10V  
GS  
V
= 50V  
DS  
V
= 50V  
DS  
I
= 90A  
D
I
= 90A, 180A  
D
I
= 180A  
D
2
3
4
5
6
7
8
9
10 11 12 13 14 15  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 18. Resistive Turn-off Switching Times vs.  
Gate Resistance  
Fig. 17. Resistive Turn-off Switching Times vs.  
Drain Current  
17  
16  
15  
14  
13  
12  
46  
44  
42  
40  
38  
36  
17  
50  
tf  
td(off)  
RG = 2Ω, VGS = 10V  
VDS = 50V  
t f  
td(off)  
16  
15  
14  
13  
12  
11  
46  
42  
38  
34  
30  
26  
T
J
= 125oC, V = 10V  
GS  
V
= 50V  
DS  
T
J
= 125oC  
T
J
= 25oC  
I
= 180A, 90A  
D
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
90  
100  
110  
120  
130  
140  
150  
160  
170  
180  
ID - Amperes  
RG - Ohms  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXFA180N10T2  
IXFP180N10T2  
Fig. 19. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: F_180N10T2 (V6) 01-20-09  
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