IXFC 26N50Q
IXFC 24N50Q
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
ISOPLUS220 Outline
VDS = 10 V; ID = 0.5 • ID25
Note 1
11
24
S
Ciss
Coss
Crss
3900
500
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
130
td(on)
tr
td(off)
tf
28
30
55
16
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1 Ω (External)
Qg(on)
Qgs
95
27
40
nC
nC
nC
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
RthCK
0.54 K/W
K/W
0.30
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
TestConditions
IS
VGS = 0 V
26
A
A
ISM
Repetitive; pulse width limited by TJM
104
VSD
trr
IF = IS, VGS = 0 V, Note 1
1.5
V
T = 25°C
250
400
ns
ns
µC
µC
A
A
TJJ = 125°C
IF = I , -di/dt = 100 A/µs,
VR =s100 V
QRM
IRM
T = 25°C
1
2
10
15
1
TJJ = 125°C
T = 25°C
TJJ = 125°C
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
2.IT testcurrent:
IXFC26N50Q
IXFC24N50Q
I = 13A
ITT = 12A
IXYSreservestherighttochangelimits, testconditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
