NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTOR
ISSUE 1 APRIL 94
ZTX614
FEATURES
*
*
*
*
100 Volt VCEO
800 mA continuous current
Gain of 10K at IC=500mA
Ptot=1 Watt
C
B
E
REFER TO BCX38 FOR GRAPHS
E-line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
VALUE
UNIT
V
Collector-Base Voltage
120
100
10
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Continuous Collector Current
800
mA
Power Dissipation at Tamb=25°C
derate above 25°C
Ptot
1.0
5.7
W
mW/ °C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at T
= 25°C).
amb
PARAMETER
SYMBOL MIN.
V(BR)CBO 120
TYP.
MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
IC=10µA, IE=0
Collector-Emitter
Sustaining Voltage
VCEO(sus) 100
V
IC=10mA, IB=0*
IE=10µA, IC=0
VCB=60V, IE=0
Emitter-Base
Breakdown Voltage
V(BR)EBO
10
V
Collector Cut-Off
Current
ICBO
100
nA
Emitter Cut-Off Current IEBO
100
nA
V
VEB=8V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat)
1.25
IC=800mA, IB=8mA*
Base-Emitter
Turn-On Voltage
VBE(on)
1.8
V
IC=800mA, VCE=5V*
Static Forward Current hFE
Transfer Ratio
5000
10000
IC=100mA, VCE=5V*
IC=500mA, VCE=5V*
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%
3-215
