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PY291A-35WI

型号：

PY291A-35WI

品牌：

PYRAMID[ PYRAMID SEMICONDUCTOR CORPORATION ]

页数：

9 页

PDF大小：

544 K

下载PDF手册
PY291A  
2K x 8 rEPrOGrAMMABLE PrOM  
FEATurES  
Windowed devices foꢀ ꢀepꢀogꢀamming  
EPrOM Technology foꢀ ꢀepꢀogꢀamming  
Fꢁlly TTL Compatible Inpꢁts and Oꢁtpꢁts  
Standaꢀd Pinoꢁt (JEDEC Appꢀoved)  
High Speed  
– 20/25/35/50 ns (Commeꢀcial)  
– 25/35/50 ns (Indꢁstꢀial)  
– 35/50 ns (Militaꢀy)  
– 24-Pin 300 mil DIP  
– Windowed CErDIP  
– Non-Windowed CErDIP  
– Non-Windowed Plastic DIP  
Low Poweꢀ Opeꢀation: 660 mW  
Single 5V±10% Poweꢀ Sꢁpply  
DESCrIPTION  
The PY291A is a 2Kx8 CMOS PROM. The device is  
available in windowed packages which when exposed  
to UV light, the memory content in the PROM is erased  
andcanbereprogrammed.EPROMtechnologyisusedin  
thememorycellsforprogramming.TheEPROMrequires  
a 12.5V for programming. Devices are tested to insure  
that performance of the device meets the DC and AC  
specification limits after customer programming.  
and CS2 and CS3 are HIGH. The memory contents in the  
address established by the Address pins (A0 to A10) will  
become available on the outputs (O0 to O7).  
The PY291Ais available in 24-pin 300 mil Ceramic DIPs  
(CERDIP, Windowed and Non-Windowed) and Plastic  
DIPs (Non-Windowed).  
To perform a read operation from the device, CS1 is LOW  
FuNCTIONAL BLOCK DIAGrAM  
PIN CONFIGurATION  
DIP (P4, D4, WD1)  
Note: Window on WD1 package only  
Document # EPROM101 REV 01  
Revised March 2010  
1
PY291A  
MAxIMuM rATINGS(1)  
Symbol  
TA  
Paꢀameteꢀ  
Valꢁe  
unit  
Symbol  
Paꢀameteꢀ  
Valꢁe  
unit  
Operating Temperature –55 to +125 °C  
VCC  
Power Supply Pin with  
Respect to GND  
–0.5 to +7  
V
TBIAS  
Temperature Under  
Bias  
–55 to +125  
°C  
Terminal Voltage with  
Respect to GND  
(up to 7.0V)  
–0.5 to  
VCC +0.5  
VTERM  
VPP  
V
V
TSTG  
PT  
Storage Temperature  
Power Dissipation  
DC Output Current  
–65 to +150  
°C  
W
1.0  
50  
Program Voltage  
13  
IOUT  
mA  
CAPACITANCES(4)  
(VCC = 5.0V, TA = 25°C, f = 1.0MHz)  
rECOMMENDED OPErATING CONDITIONS  
Gꢀade(2)  
Ambient Temp  
Gnd  
Vcc  
Symbol  
CIN  
Paꢀameteꢀ  
Conditions Typ. unit  
Commercial  
0°C to +70°C  
0V 5.0V ±10%  
0V 5.0V ±10%  
0V 5.0V ±10%  
Input Capacitance VIN = 0V  
Output Capacitance VOUT= 0V  
10 pF  
10 pF  
Industrial  
Military  
-40°C to +85°C  
-55°C to +125°C  
COUT  
DC ELECTrICAL CHArACTErISTICS  
Over recommended operating temperature and supply voltage(2)  
PY291A  
Symbol  
Paꢀameteꢀ  
Test Conditions  
unit  
Min  
Maꢂ  
Input High Voltage  
2.0  
VCC  
VIH  
V
V
V
VIL  
VHC  
VLC  
Input Low Voltage  
–0.5(3)  
0.8  
VCC –0.2  
VCC +0.5  
CMOS Input High Voltage  
CMOS Input Low Voltage  
–0.5(3)  
0.2  
0.4  
V
V
Output Low Voltage (TTL Load) IOL = +16 mA, VCC = Min.  
VOL  
VOH  
Output High Voltage (TTL Load) IOH = –4 mA, VCC = Min.  
2.4  
V
VCC = Max.  
Input Leakage Current  
ILI  
–10  
+10  
+10  
µA  
VIN = GND to VCC  
VCC = Max., CE = VIH,  
Output Leakage Current  
µA  
ILO  
–10  
12  
VOUT = GND to VCC  
Programming Supply Voltage  
Programming Supply Current  
13  
50  
V
mA  
V
VPP  
IPP  
VIHP Input HIGH Programming Voltage  
VILP Input LOW Programming Voltage  
3.0  
0.4  
V
POWEr DISSIPATION CHArACTErISTICS VS. SPEED  
Symbol  
Paꢀameteꢀ  
Tempeꢀatꢁꢀe range  
Commercial  
–20  
–25  
–35  
–50  
unit  
120  
N/A  
N/A  
90  
90  
90  
90  
90  
90  
90  
90  
mA  
mA  
mA  
ICC  
Dynamic Operating Current*  
Industrial  
Military  
N/A  
Document # EPROM101 REV 01  
Page 2 of 9  
PY291A  
AC ELECTrICAL CHArACTErISTICS—rEAD CYCLE  
(VCC = 5V ± 10%, All Temperature Ranges)(2)  
-20  
-25  
-35  
-50  
Symbol  
Paꢀameteꢀ  
unit  
Min Maꢂ Min Maꢂ Min Maꢂ Min Maꢂ  
20  
15  
15  
22  
22  
25  
15  
15  
27  
27  
35  
20  
20  
35  
35  
50  
20  
20  
45  
45  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tAA  
Address to Output Valid  
tHZCS1  
tACS1  
tHZCS2  
tACS2  
tPU  
Chip Select Inactive to High Z  
Chip Select Active to Output Valid  
Chip Select Inactive to High Z  
Chip Select Active to Output Valid  
Chip Select Active to Power-Up  
Chip Slect Inactive to Power-Down  
0
0
0
0
22  
27  
35  
45  
tPD  
TIMING WAVEFOrM OF rEAD CYCLE  
Notes:  
1. Stresses greater than those listed under MAꢀIMUM RATINGS may  
cause permanent damage to the device. This is a stress rating only  
and functional operation of the device at these or any other conditions  
above those indicated in the operational sections of this specification  
is not implied. Exposure to MAꢀIMUM rating conditions for extended  
periods may affect reliability.  
2. Extended temperature operation guaranteed with 400 linear feet per  
minute of air flow.  
3. Transient inputs with VIL and IIL not more negative than –3.0V and  
–100mA, respectively, are permissible for pulse widths up to 20ns.  
4. This parameter is sampled and not 100% tested.  
Document # EPROM101 REV 01  
Page 3 of 9  
PY291A  
DEVICE ErASurE  
of 25 Wsec/cm2. If using a UV lamp of 12 mW/cm2, the  
exposure time is estimated to be 35 minutes. Devices  
should be positioned within 1 inch of the lamp during  
the erasure process. Permanent damage can occur  
to the devices if exposed to UV light for an extended  
period of time.  
If the device is subjected to wavelengths of light below  
4000 Angstroms, device erasure will commence. It is  
therefore recommended to use an opaque label over  
the window in the event the device will be exposed to  
lighting for a long time.The UV dose for erasure requires  
a wavelength of 2,537 Angstroms for a minimum dose  
MODE SELECTION  
Pin Fꢁnction  
read oꢀ Oꢁtpꢁt Disable  
Otheꢀ  
A10-A0  
CS3  
PGM  
VIH  
CS2  
VFY  
VIH  
CS1  
VPP  
VIL  
O7-O0  
D7-D0  
Mode  
A10-A0  
A10-A0  
A10-A0  
A10-A0  
A10-A0  
A10-A0  
A10-A0  
A10-A0  
A10-A0  
A10-A0  
Read  
O7-O0  
High Z  
High Z  
High Z  
D7-D0  
Output Disable  
Output Disable  
Output Disable  
Program  
ꢀ
ꢀ
VIH  
ꢀ
ꢀ
VIL  
VIL  
ꢀ
ꢀ
VILP  
VIHP  
VIHP  
VILP  
VIHP  
VIHP  
VILP  
VIHP  
VIHP  
VILP  
VPP  
VPP  
VPP  
VPP  
VPP  
Program Verify  
Program Inhibit  
Intelligent Program  
O7-O0  
High Z  
D7-D0  
Blank Check Zeros  
ꢀ = Don't Care  
Zeros  
PrOGrAMMING PINOuTS  
Document # EPROM101 REV 01  
Page 4 of 9  
PY291A  
AC TEST CONDITIONS  
Input Pulse Levels  
GND to 3.0V  
Input Rise and Fall Times  
Input Timing Reference Level  
Output Timing Reference Level  
Output Load  
3ns  
1.5V  
1.5V  
See Figures 1 and 2  
Figꢁꢀe 1. Oꢁtpꢁt Load  
Figꢁꢀe 2. Thevenin Eqꢁivalent  
* including scope and test fixture.  
Note:  
Becauseoftheultra-highspeedofthePY291A,caremustbetakenwhen  
testing this device; an inadequate setup can cause a normal functioning  
part to be rejected as faulty. Long high-inductance leads that cause  
supply bounce must be avoided by bringing the VCC and ground planes  
directly up to the contactor fingers. A 0.01 µF high frequency capacitor  
is also required between VCC and ground.  
Document # EPROM101 REV 01  
Page 5 of 9  
PY291A  
OrDErING INFOrMATION  
Document # EPROM101 REV 01  
Page 6 of 9  
PY291A  
CErAMIC DuAL IN-LINE PACKAGE (NON-WINDOWED)  
Pkg #  
D4  
# Pins  
24 (300 mil)  
Symbol  
Min  
-
Maꢂ  
0.200  
0.026  
0.065  
0.018  
1.280  
0.310  
A
b
0.014  
0.045  
0.008  
-
b2  
C
D
E
0.220  
eA  
e
0.300 BSC  
0.100 BSC  
L
0.125  
0.200  
0.060  
-
Q
S1  
α
0.015  
0.005  
0°  
15°  
CErAMIC DuAL IN-LINE PACKAGE (WINDOWED)  
Pkg #  
WD1  
# Pins  
24 (300 mil)  
Symbol  
Min  
-
Maꢂ  
0.200  
0.026  
0.065  
0.018  
1.280  
0.310  
A
b
0.014  
0.045  
0.008  
-
b2  
C
D
E
0.220  
eA  
e
0.300 BSC  
0.100 BSC  
L
0.125  
0.200  
0.060  
-
Q
S1  
α
0.015  
0.005  
0°  
15°  
WD  
0.175  
Document # EPROM101 REV 01  
Page 7 of 9  
PY291A  
PLASTIC DuAL IN-LINE PACKAGE  
Pkg #  
P4  
# Pins  
24 (300 Mil)  
Symbol  
Min  
-
Maꢂ  
0.210  
-
A
A1  
b
0.015  
0.014  
0.045  
0.008  
1.230  
0.240  
0.280  
0.022  
0.070  
0.014  
1.280  
0.280  
0.325  
b2  
C
D
E1  
E
e
0.100 BSC  
eB  
L
-
0.430  
0.160  
15°  
0.115  
0°  
α
Document # EPROM101 REV 01  
Page 8 of 9  
PY291A  
rEVISIONS  
DOCuMENT NuMBEr EPROM101  
DOCuMENT TITLE  
PY291A 2K x 8 REPROGRAMMABLE PROM  
rEV ISSuE DATE  
OrIGINATOr DESCrIPTION OF CHANGE  
OR  
01  
Jun-2007  
Mar-2010  
JDB  
JDB  
New Data Sheet  
Added Industrial Temperature Range  
Document # EPROM101 REV 01  
Page 9 of 9  
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