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UZDT605

型号:

UZDT605

品牌:

DIODES[ DIODES INCORPORATED ]

页数:

3 页

PDF大小:

48 K

SM-8 DUAL NPN MEDIUM POWER  
ZDT605  
DARLINGTON TRANSISTORS  
ISSUE 1 - NOVEMBER 1995  
B1  
E1  
B2  
E2  
C1  
C1  
C2  
C2  
SM-8  
PARTMARKING DETAIL – T605  
(8 LEAD SOT223)  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VALUE  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VCBO  
VCEO  
VEBO  
ICM  
140  
120  
V
10  
V
Peak Pulse Current  
4
1
A
Continuous Collector Current  
IC  
A
Operating and Storage Temperature Range Tj:Tstg  
-55 to +150  
°C  
THERMAL CHARACTERISTICS  
PARAMETER  
SYMBOL  
Ptot  
VALUE  
UNIT  
Total Power Dissipation at Tamb= 25°C*  
Any single die “on”  
Both die “on” equally  
2.25  
2.75  
W
W
Derate above 25°C*  
Any single die “on”  
Both die “on” equally  
18  
22  
mW/ °C  
mW/ °C  
Thermal Resistance - Junction to Ambient*  
Any single die “on”  
Both die “on” equally  
55.6  
45.5  
°C/ W  
°C/ W  
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB  
with copper equal to 2 inches square.  
3 - 324  
ZDT605  
ELECTRICAL CHARACTERISTICS (at T  
amb  
= 25°C unless otherwise stated).  
PARAMETER  
SYMBOL  
V(BR)CBO  
MIN.  
140  
MAX.  
UNIT  
V
CONDITIONS.  
Collector-Base Breakdown  
Voltage  
IC=100µA  
Collector-Emitter Breakdown VCEO(SUS)  
Voltage  
120  
10  
V
V
IC=10mA*  
Emitter-Base Breakdown  
Voltage  
V(BR)EBO  
IE=100µA  
Collector Cutoff Current  
ICBO  
0.01  
10  
VCB=120V  
VCB=120V, T =100°C  
amb  
µA  
µA  
Collector Cutoff Current  
Emitter Cutoff Current  
ICES  
10  
VCES=120V  
VEB=8V  
µA  
µA  
IEBO  
0.1  
Collector-Emitter Saturation  
Voltage  
VCE(sat)  
1.0  
1.5  
V
V
IC=250mA, IB=0.25mA*  
IC=1A, IB=1mA*  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
1.8  
1.7  
V
V
IC=1A, IB=1mA*  
IC=1A, VCE=5V*  
Base-Emitter TurnOn Voltage VBE(on)  
Static Forward  
Current Transfer Ratio  
hFE  
2K  
5K  
2K  
0.5K  
IC=50mA, VCE=5V*  
IC=500mA, VCE=5V*  
IC=1A, VCE=5V*  
100K  
IC=2A, VCE=5V*  
Transition Frequency  
fT  
150  
MHz  
IC=100mA, VCE=10V  
f=20MHz  
Input Capacitance  
Output Capacitance  
Switching Times  
Cibo  
Cobo  
ton  
90 Typical  
15 Typical  
pF  
pF  
µs  
µs  
VEB=0.5V, f=1MHz  
VCE=10V, f=1MHz  
0.5 Typical  
1.6 Typical  
IC=0.5A, VCE=10V  
IB1=IB2=0.5mA  
toff  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
3 - 325  
ZDT605  
TYPICAL CHARACTERISTICS  
I
- Collector Current (Amps)  
I
- Collector Current (Amps)  
hFE v IC  
VCE(sat) v IC  
I
- Collector Current (Amps)  
I
- Collector Current (Amps)  
VBE(sat) v IC  
VBE(on) v IC  
3 - 326  
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