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IXGQ50N60C4D1

型号：

IXGQ50N60C4D1

品牌：

IXYS[ IXYS CORPORATION ]

页数：

7 页

PDF大小：

197 K

下载PDF手册
VCES = 600V  
IC110 = 46A  
VCE(sat) ≤ 2.3V  
High-Gain IGBTs  
w/ Diode  
IXGQ50N60C4D1  
IXGH50N60C4D1  
High-Speed PT Trench IGBTs  
TO-3P (IXGQ)  
G
C
E
Symbol  
Test Conditions  
Maximum Ratings  
Tab  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C, RGE = 1MΩ  
TO-247 (IXGH)  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
IC25  
IC110  
IF110  
TC = 25°C  
TC = 110°C  
TC = 110°C  
90  
46  
18  
A
A
A
G
C
Tab  
=
E
ICM  
TC = 25°C, 1ms  
220  
A
SSOA  
VGE = 15V, TVJ = 125°C, RG = 10Ω  
ICM = 72  
A
G = Gate  
C
Collector  
(RBSOA)  
Clamped Inductive Load  
VCE ≤ VCES  
E = Emitter  
Tab = Collector  
PC  
TC = 25°C  
300  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
°C  
°C  
°C  
Features  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
z
Optimized for Low Switching Losses  
Anti-Parallel Ultra Fast Diode  
Square RBSOA  
z
z
Md  
Mounting Torque  
1.13/10  
Nm/lb.in.  
Weight  
TO-3P  
TO-247  
5.5  
6.0  
g
g
Advantages  
z Easy to Mount  
z Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified  
Min.  
600  
4.0  
Typ.  
Max.  
Applications  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
z Power Inverters  
z UPS  
z Motor Drives  
z SMPS  
z PFC Circuits  
z Battery Chargers  
z Lamp Ballasts  
6.5  
50 μA  
2.5 mA  
TJ = 125°C  
TJ = 125°C  
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
VCE(sat)  
IC = 36A, VGE = 15V, Note 1  
1.9  
1.6  
2.3  
V
V
© 2011 IXYS CORPORATION, All Rights Reserved  
DS100297D(10/11)  
IXGQ50N60C4D1  
IXGH50N60C4D1  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-3P Outline  
Min.  
Typ.  
Max.  
gfs  
IC = 36A, VCE = 10V, Note 1  
20  
30  
S
Cies  
Coes  
Cres  
1900  
100  
60  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
Qg  
113  
13  
nC  
nC  
nC  
Qge  
Qgc  
IC = IC110, VGE = 15V, VCE = 0.5 • VCES  
44  
td(on)  
tri  
Eon  
td(off)  
tfi  
40  
66  
ns  
ns  
mJ  
ns  
Inductive Load, TJ = 25°C  
1 = Gate  
3 = Emitter  
2,4  
= Collector  
IC = 36A, VGE = 15V  
0.95  
270  
63  
VCE = 400V, RG = 10Ω  
ns  
Note 2  
Eof  
0.84  
1.55 mJ  
f
td(on)  
tri  
30  
45  
ns  
ns  
Inductive Load, TJ = 125°C  
IC = 36A, VGE = 15V  
Eon  
td(off)  
tfi  
1.10  
210  
96  
mJ  
ns  
VCE = 400V, RG = 10Ω  
ns  
Note 2  
Eoff  
0.90  
mJ  
RthJC  
RthCS  
0.42 °C/W  
°C/W  
0.25  
TO-247 Outline  
Reverse Diode (FRED)  
∅ P  
1
2
3
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min. Typ.  
Max.  
VF  
IF = 15A, VGE = 0V, Note 1  
2.7  
V
V
TJ = 150°C  
1.6  
IRM  
trr  
TJ = 100°C  
TJ = 100°C  
2.6  
A
ns  
ns  
IF = 15A, VGE = 0V, -diF/dt = 100A/μs,  
VR = 100V  
e
100  
25  
Terminals: 1 - Gate  
3 - Emitter  
2 - Collector  
IF = 1A, VGE = 0V, -diF/dt = 100A/μs, VR = 30V  
RthJC  
1.6 °C/W  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
Notes:  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGQ50N60C4D1  
IXGH50N60C4D1  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGE = 15V  
14V  
VGE = 15V  
300  
250  
200  
150  
100  
50  
13V  
11V  
10V  
13V  
9V  
8V  
12V  
11V  
10V  
9V  
8V  
7V  
6V  
7V  
6V  
0
0
0
6
0.5  
1
1.5  
2
2.5  
3
0
5
10  
15  
20  
25  
30  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
VGE = 15V  
13V  
12V  
11V  
10V  
I C = 72A  
9V  
I C = 36A  
8V  
7V  
6V  
I C = 18A  
VGE = 15V  
-25  
0
25  
50  
75  
100  
125  
150  
0.5  
1
1.5  
2
2.5  
3
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
160  
140  
120  
100  
80  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
TJ = 25ºC  
TJ = - 40ºC  
25ºC  
I C = 72A  
125ºC  
60  
36A  
40  
18A  
8
20  
0
7
9
10  
11  
12  
13  
14  
15  
4.5  
5
5.5  
6
6.5  
7
7.5  
8
8.5  
9
9.5  
10  
VGE - Volts  
VGE - Volts  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXGQ50N60C4D1  
IXGH50N60C4D1  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
45  
40  
35  
30  
25  
20  
15  
10  
5
16  
14  
12  
10  
8
VCE = 300V  
TJ = - 40ºC  
I
I
C = 36A  
G = 10mA  
25ºC  
125ºC  
6
4
2
0
0
0
20  
40  
60  
80  
100  
120  
140  
0
20  
40  
60  
80  
100  
120  
650  
1
QG - NanoCoulombs  
IC - Amperes  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
80  
10,000  
1,000  
100  
= 1 MHz  
f
70  
60  
50  
40  
30  
20  
10  
0
C
ies  
C
C
oes  
TJ = 125ºC  
RG = 10  
res  
Ω
dv / dt < 10V / ns  
10  
100  
150  
200  
250  
300  
350  
400  
450  
500  
550  
600  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
Pulse Width - Second  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXGQ50N60C4D1  
IXGH50N60C4D1  
Fig. 13. Inductive Switching Energy Loss vs.  
Collector Current  
Fig. 12. Inductive Switching Energy Loss vs.  
Gate Resistance  
3.5  
3
3.5  
3
4.5  
4
4.5  
4
E
E
E
E
on - - - -  
VGE = 15V  
on - - - -  
off  
TJ = 125ºC , VGE = 15V  
CE = 400V  
off  
RG = 10  
Ω ,  
VCE = 400V  
3.5  
3
3.5  
3
V
2.5  
2
2.5  
2
I C = 72A  
TJ = 125ºC, 25ºC  
2.5  
2
2.5  
2
1.5  
1
1.5  
1
1.5  
1
1.5  
1
I C = 36A  
0.5  
0
0.5  
0
0.5  
0
0.5  
0
15  
25  
35  
45  
IC - Amperes  
55  
65  
75  
10  
15  
20  
25  
30  
35  
RG - Ohms  
Fig. 14. Inductive Switching Energy Loss vs.  
Junction Temperature  
Fig. 15. Inductive Turn-off Switching Times vs.  
Gate Resistance  
135  
550  
500  
450  
400  
350  
300  
250  
200  
150  
100  
3.5  
3
3.5  
3
t f i  
td(off)  
- - - -  
E
E
on - - - -  
130  
125  
120  
115  
110  
105  
100  
95  
off  
TJ = 125ºC, VGE = 15V  
RG = 10  
VGE = 15V  
Ω ,  
VCE = 400V  
VCE = 400V  
2.5  
2
2.5  
2
I C = 72A  
I C = 72A  
1.5  
1
1.5  
1
I C = 36A  
I C = 36A  
0.5  
0
0.5  
0
90  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
10  
15  
20  
25  
30  
35  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Inductive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 16. Inductive Turn-off Switching Times vs.  
Collector Current  
130  
120  
110  
100  
90  
320  
300  
280  
260  
240  
220  
200  
180  
160  
150  
130  
110  
90  
360  
tf i  
t
d(on) - - - -  
t f i  
td(off)  
- - - -  
320  
280  
240  
200  
160  
120  
RG = 10  
, VGE = 15V  
Ω
RG = 10  
, VGE = 15V  
Ω
VCE = 400V  
VCE = 400V  
TJ = 25ºC, 125ºC  
I C = 36A  
80  
I C = 72A  
70  
70  
50  
60  
50  
30  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
15  
25  
35  
45  
55  
65  
75  
IC - Amperes  
TJ - Degrees Centigrade  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXGQ50N60C4D1  
IXGH50N60C4D1  
Fig. 19. Inductive Turn-on Switching Times vs.  
Collector Current  
Fig. 18. Inductive Turn-on Switching Times vs.  
Gate Resistance  
140  
120  
100  
80  
80  
70  
60  
50  
40  
30  
20  
10  
160  
140  
120  
100  
80  
90  
80  
70  
60  
50  
40  
30  
20  
tr i  
td(on) - - - -  
tr i  
td(on)  
- - - -  
RG = 10  
, VGE = 15V  
Ω
TJ = 125ºC, VGE = 15V  
VCE = 400V  
VCE = 400V  
I C = 72A  
TJ = 25ºC  
60  
40  
60  
TJ = 125ºC  
I C = 36A  
20  
40  
0
20  
15  
25  
35  
45  
55  
65  
75  
10  
15  
20  
RG - Ohms  
25  
30  
35  
IC - Amperes  
Fig. 20. Inductive Turn-on Switching Times vs.  
Junction Temperature  
160  
140  
120  
100  
80  
56  
t r i  
td(on)  
- - - -  
52  
48  
44  
40  
36  
32  
28  
24  
RG = 10  
, VGE = 15V  
Ω
VCE = 400V  
I C = 72A  
60  
40  
I C = 36A  
20  
0
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: G_50N60C4(L5)03-23-11  
IXGQ50N60C4D1  
IXGH50N60C4D1  
Fig. 22. Reverse Recovery Charge  
vs. - diF/dt  
Fig. 23. Peak Reverse Current  
vs. - diF/dt  
Fig. 21. Forward Voltage vs.  
Forward Current  
40  
35  
30  
25  
20  
15  
10  
5
1800  
1600  
1400  
1200  
1000  
800  
600  
400  
200  
0
40  
35  
30  
25  
20  
15  
10  
5
T
= 100ºC  
= 300V  
T
= 100ºC  
= 300V  
J
J
V
V
R
R
I F = 30A  
15A  
TJ = 150ºC  
100ºC  
7.5A  
25ºC  
I F = 30A, 15A, 7.5A  
0
0
0
200  
400  
600  
800  
1000  
0
0.5  
1
1.5  
2
2.5  
100  
1000  
VF - Volts  
-diF/dt - A/µs  
-diF/dt - A/µs  
Fig. 25. Reverse Recovery Time  
vs. - diF/dt  
Fig. 26. Peak Forward Voltage & Forward  
Recovery Time vs. diF/dt  
Fig. 24. Dynamic Parameter  
vs. Junction Temperature  
20  
15  
10  
5
2
2
1.8  
1.6  
1.4  
1.2  
1
120  
110  
100  
90  
T
= 100ºC  
= 300V  
T
I
= 100ºC  
= 15A  
F
J
J
V
R
1.5  
VFR  
1
I F = 30A  
I RM  
0.8  
0.6  
0.4  
0.2  
0
0.5  
Q
r
15A  
80  
t
f r  
7.5A  
0
0
1000  
70  
0
200  
400  
600  
800  
0
200  
400  
600  
800  
1000  
20  
40  
60  
80  
100  
120  
140  
160  
diF/dt - A/µs  
TJ - Degrees Centigrade  
-diF/dt - A/µs  
Fig. 27. Maximum Transient Thermal Impedance (for Diode)  
10  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Second  
© 2011 IXYS CORPORATION, All Rights Reserved  
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