IXGA 12N60BD1
IXGP 12N60BD1
Symbol
gfs
TestConditions
Characteristic Values
(T = 25°C, unless otherwise specified)
TO-220 AB Outline
J
min. typ. max.
I
= I ; V = 10 V,
5
11
S
C
C90
CE
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies
Coes
Cres
860
100
15
pF
pF
pF
V
= 25 V, V = 0 V, f = 1 MHz
GE
CE
Qg
32
10
10
nC
nC
nC
Pins:
1 - Gate
Qge
Qgc
I = I , V = 15 V, V = 0.5 V
C C90 GE CE CES
2 - Collector 3 - Emitter
4 - Collector Bottom Side
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
td(on)
tri
td(off)
tfi
20
ns
ns
ns
ns
Inductive load, TJ = 25°C
A
B
12.70 13.97 0.500 0.550
14.73 16.00 0.580 0.630
20
I = I , V = 15 V, L = 300 µH
C
C90
GE
V
= 0.8 V , R = R = 18 Ω
C
D
9.91 10.66 0.390 0.420
4.08 0.139 0.161
CE
CES
G
off
150 250
120 270
3.54
Remarks: Switching times may increase
for V (Clamp) > 0.8 V , higher T or
increased R
E
F
5.85
2.54
6.85 0.230 0.270
3.18 0.100 0.125
CE
CES
J
Eoff
0.5
0.8 mJ
G
H
1.15
2.79
1.65 0.045 0.065
5.84 0.110 0.230
G
td(on)
tri
20
20
ns
ns
J
0.64
2.54
1.01 0.025 0.040
BSC
Inductive load, TJ = 125°C
K
BSC 0.100
I = I , V = 15 V, L = 300 µH
M
N
4.32
1.14
4.82 0.170 0.190
1.39 0.045 0.055
C
C90
GE
Eon
td(off)
tfi
0.15
200
200
0.8
mJ
ns
V
= 0.8 V , R = R = 18 Ω
CE
CES
G
off
Q
R
0.35
2.29
0.56 0.014 0.022
2.79 0.090 0.110
Remarks: Switching times may increase
for V (Clamp) > 0.8 V , higher T or
increased R
ns
CE
CES
J
Eoff
mJ
TO-263 AA Outline
G
RthJC
RthCK
IGBT
1.25 K/W
K/W
0.25
ReverseDiode(FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
VF
TestConditions
min. typ. max.
IF = 15A; TVJ = 150°C
1.3
2
V
V
TVJ
=
25°C
2.5
2.5
IRM
VR = 100 V; IF =25A; -diF/dt = 100 A/µs
L < 0.05 µH; TVJ = 100°C
A
1. Gate
2. Collector
3. Emitter
4. Collector
BottonSide
trr
IF = 1 A; -di/dt = 50 A/µs;
VR = 30 V TJ = 25°C
35
ns
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
RthJC
Diode
1.6 K/W
A
4.06
2.03
4.83
2.79
.160
.080
.190
.110
A1
b
0.51
1.14
0.99
1.40
.020
.045
.039
.055
b2
Min.RecommendedFootprint
(Dimensions in inches and mm)
c
0.46
1.14
0.74
1.40
.018.029
.045
c2
.055
D
8.64
7.11
9.65
8.13
.340
.280
.380
.320
D1
E
9.65
6.86
2.54
10.29
8.13
.380
.270
.405
.320
E1
e
BSC
.100
BSC
L
14.61
2.29
1.02
1.27
0
15.88
2.79
.575
.090
.040
.625
.110
.055
L1
L2
L3
L4
1.40
1.78.050
0.380
.070
.015
.018.029
R
0.46
0.74
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
