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UZDM4206N

型号:

UZDM4206N

品牌:

ZETEX[ ZETEX SEMICONDUCTORS ]

页数:

3 页

PDF大小:

100 K

SM-8 DUAL N-CHANNEL ENHANCEMENT  
ZDM4206N  
MODE AVALANCHE RATED MOSFET  
ISSUE 1 - NOVEMBER 1995  
D1  
D1  
D2  
D2  
G1  
S1  
G2  
S2  
SM-8  
PARTMARKING DETAIL – M4206N  
(8 LEAD SOT223)  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VDS  
VALUE  
UNIT  
V
Drain-Source Voltage  
60  
Continuous Drain Current at Tam b=25°C  
Pulsed Drain Current  
ID  
1
A
IDM  
8
A
Gate-Source Voltage  
VGS  
V
± 20  
Continuous Body Diode Current at Tam b =25°C  
Avalanche Current – Repetitive  
ISD  
1
600  
A
IAR  
mA  
m J  
°C  
Avalanche Energy – Repetitive  
EAR  
15  
Operating and Storage Tem perature Range  
Tj:Tstg  
-55 to +150  
THERMAL CHARACTERISTICS  
PARAMETER  
SYMBOL  
Ptot  
VALUE  
UNIT  
Total Power Dissipation at Tam b = 25°C*  
Any single die on”  
Both die on” equally  
2.25  
2.75  
W
W
Derate above 25°C*  
Any single die on”  
Both die on” equally  
18  
22  
m W/ °C  
m W/ °C  
Therm al Resistance - J unction to Am bient*  
Any single die on”  
Both die on” equally  
55.6  
45.5  
°C/ W  
°C/ W  
* The power which can be dissipated assum ing the device is m ounted in a typical m anner on a PCB  
with copper equal to 2 inches square.  
3 - 317  
ZDM4206N  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherw ise stated).  
am b  
PARAMETER  
SYMBOL MIN.  
MAX. UNIT CONDITIONS.  
Drain-Source Breakdown  
Voltage  
BVDSS  
60  
V
ID=1m A, VGS=0V  
Gate-Source Threshold Voltage  
Gate-Body Leakage  
VGS(th)  
IGSS  
1.3  
3
V
ID=1m A, VDS= VGS  
100  
nA  
VGS=± 20V, VDS=0V  
Zero Gate Voltage Drain Current IDSS  
10  
100  
VDS=60V, VGS=0  
VDS=48V, VGS=0V, T=125°C(2)  
µA  
µA  
On-State Drain Current(1)  
ID(on)  
3
A
VDS=25V, VGS=10V  
VGS=10V,ID=1.5A  
Static Drain-Source On-State  
Resistance (1)  
RDS(on)  
1
1.5  
VGS=5V,ID=0.5A  
Forward Transconductance(1)(2) gfs  
300  
m S  
pF  
pF  
VDS=25V,ID=1.5A  
Input Capacitance (2)  
Ciss  
Coss  
100  
60  
Com m on Source Output  
Capacitance (2)  
VDS=25V, VGS=0V, f=1MHz  
Reverse Transfer Capacitance (2) Crss  
20  
8
pF  
ns  
ns  
ns  
ns  
Turn-On Delay Tim e (2)(3)  
Rise Tim e (2)(3)  
td(on)  
tr  
12  
12  
15  
VDD25V, ID=1.5A,VGEN=10V  
Turn-Off Delay Tim e (2)(3)  
Fall Tim e (2)(3)  
td(off)  
tf  
(1) Measured under pulsed conditions. Width=300µs. Duty cycle 2%  
(2) Sam ple test.  
(3) Switching tim es m easured with 50source im pedance and <5ns rise tim e on a pulse  
generator  
TYPICAL CHARACTERISTICS  
10  
8
10  
V
GS=  
V
GS=  
20V  
16V  
20V  
16V  
14V  
8
6
14V  
12V  
12V  
6
10V  
9V  
10V  
9V  
8V  
8V  
4
2
4
2
0
7V  
6V  
7V  
6V  
5V  
4.5V  
4V  
3.5V  
10  
5V  
D
4.5V  
4V  
D
0
3.5V  
2
4
6
8
0
10  
20  
30  
40  
50  
VDS - Drain Source Voltage (Volts)  
VDS - Drain Source Voltage (Volts)  
Output Characteristics  
Saturation Characteristics  
3 - 318  
ZDM4206N  
TYPICAL CHARACTERISTICS  
10  
6
4
2
8
6
VDS=10V  
4
2
I
D=  
3A  
1.5A  
0.5A  
0
0
0
2
4
6
8
10  
0
2
4
6
8
10  
V
GS-Gate Source Voltage (Volts)  
VGS-Gate Source Voltage (Volts)  
Transfer Characteristics  
Voltage Saturation Characteristics  
4.5V  
8V  
10V  
VGS=3.5V  
6V  
10  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
V
GS=10V  
ID=1.5A  
)
n
o
S(  
D
e R  
c
n
14V  
ta  
s
i
es  
e R  
1.0  
0.1  
rc  
1.4  
1.2  
1.0  
0.8  
0.6  
u
o
S
-
20V  
n
V
I
GS=  
VDS  
Drai  
D=1mA  
-50  
150  
175 200 225  
-25  
0
25 50 75 100 125  
10  
0.1  
1.0  
ID-Drain Current (Am ps)  
Tj-Junction Temperature (°C)  
Normalised RDS(on) and VGS(th) v Temperature  
On-resistance v drain current  
1000  
900  
1000  
900  
800  
800  
700  
600  
700  
600  
VDS=10V  
VDS=10V  
500  
400  
300  
200  
100  
500  
400  
300  
200  
100  
0
0
0
1
2
3
4
5
6
7
8
9
10  
0
1
2
3
4
5
6
7
8
9
10  
VGS-Gate Source Voltage (Volts)  
ID- Drain Current (Amps)  
Transconductance v drain current  
Transconductance v gate-source voltage  
3 - 319  
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