SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ZVN2106G
ISSUE 3 – NOVEMBER 1995
FEATURES
*
*
60 Volt VDS
RDS(on)=2Ω
D
S
COMPLEMENTARY TYPE -
PARTMARKING DETAIL -
ZVP2106G
ZVN2106
D
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
S YMBOL
VDS
VALUE
UNIT
V
Dra in -S o u rce Vo ltag e
60
Co n tin u o u s Dra in Cu rren t at Ta m b=25°C
Pu ls e d Dra in Cu rre n t
ID
710
mA
A
IDM
8
± 20
Ga te S o u rce Vo lta g e
VGS
V
Po w e r Dis s ip a tio n a t Ta m b=25°C
Op e ratin g a n d S to ra g e Te m p e ratu re Ra n g e
Pto t
2.0
W
Tj:Ts tg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherw ise stated).
am b
PARAMETER
S YMBOL MIN. MAX. UNIT CONDITIONS .
Dra in -S o u rce Bre akd o w n Vo lta g e
Ga te-S o u rce Th res h o ld Vo lta g e
Ga te-Bo d y Lea ka g e
BVDS S
VGS (th )
IGS S
60
V
ID=1m A, VGS=0V
ID=1m A, VDS= VGS
0.8
2.4
20
V
n A
V
GS=± 20V, VDS=0V
VDS=60 V, VGS=0
DS=48 V, VGS=0V,
Ze ro Ga te Vo lta g e Dra in Cu rre n t
IDS S
500 n A
100
V
µA
T=125°C(2)
On -S ta te Dra in Cu rre n t (1)
ID(o n )
2
A
VDS=18V, VGS=10V
VGS=10V,ID=1A
S ta tic Drain -S o u rce On -S ta te
Res is ta n ce (1)
RDS (o n )
2
Ω
Fo rw a rd Tra n s co n d u ctan ce (1)(2)
In p u t Ca p a citan ce (2)
g fs
300
m S
p F
p F
VDS=18V,ID=1A
Cis s
Co s s
75
45
Co m m o n S o u rce Ou tp u t
Cap acita n ce (2)
VDS=18 V, VGS=0V, f=1MHz
Reve rs e Tra n s fer Ca p a cita n ce (2)
Tu rn -On De lay Tim e (2)(3)
Ris e Tim e (2)(3)
Crs s
td (o n )
tr
20
7
p F
n s
n s
n s
n s
8
V
DD ≈18V, ID=1A
Tu rn -Off De la y Tim e (2)(3)
Fa ll Tim e (2)(3)
td (o ff)
tf
12
15
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sam ple test.
(3) Switching tim es m easured with 50Ω source im pedance and <5ns rise tim e on a pulse generator
Spice param eter data is available upon request for this device
3 - 385
