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FZT857TC

型号:

FZT857TC

品牌:

DIODES[ DIODES INCORPORATED ]

页数:

7 页

PDF大小:

450 K

FZT857  
Green  
300V NPN MEDIUM POWER TRANSISTOR IN SOT223  
Features  
Mechanical Data  
BVCEO > 300V  
Case: SOT223  
IC = 3.5A High Continuous Collector Current  
ICM = 5A Peak Pulse Current  
Case Material: Molded Plastic. “Green” Molding Compound.  
UL Flammability Rating 94V-0  
Very Low Saturation Voltage VCE(SAT) < 155mV @ 1A  
RCE(SAT) = 87mfor a Low Equivalent On-Resistance  
hFE Specified Up to 3A for a High Gain Hold-Up  
Complementary PNP Type: FZT957  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Finish - Matte Tin Plated Leads, Solderable per  
e3  
MIL-STD-202, Method 208  
Weight: 0.112 grams (Approximate)  
Lead-Free Finish; RoHS compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note 3)  
Qualified to AEC-Q101 Standards for High Reliability  
PPAP Capable (Note 4)  
SOT223  
C
B
E
Top View  
Pin-Out  
Top View  
Device Symbol  
Ordering Information (Notes 4 & 5)  
Product  
FZT857TA  
FZT857QTA  
Compliance  
AEC-Q101  
Automotive  
Marking  
FZT857  
FZT857  
Reel Size (inches)  
Tape Width (mm)  
Quantity per Reel  
1,000  
7
7
12  
12  
1,000  
Notes:  
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.  
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"  
and Lead-free.  
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally  
the same, except where specified. For more information, please refer to https://www.diodes.com/quality/.  
5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.  
Marking Information  
SOT223  
FZT 857 = Product Type Marking Code  
YWW = Date Code Marking  
Y or Y = Last Digit of Year (ex: 7 = 2017)  
WW or WW = Week Code (0153)  
FZT  
857  
1 of 7  
www.diodes.com  
March 2017  
© Diodes Incorporated  
FZT857  
Document Number DS33177 Rev. 9 - 2  
FZT857  
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
350  
300  
7
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
Continuous Collector Current  
Peak Pulse Current  
3.5  
5
A
A
ICM  
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
Value  
3.0  
24  
1.6  
12.8  
Unit  
(Note 6)  
(Note 7)  
Power Dissipation  
Linear Derating Factor  
W
mW/°C  
PD  
(Note 6)  
(Note 7)  
(Note 8)  
42  
78  
RθJA  
RθJA  
Thermal Resistance, Junction to Ambient  
°C/W  
Thermal Resistance Junction to Lead  
8.8  
RθJL  
Operating and Storage Temperature Range  
-55 to +150  
°C  
TJ, TSTG  
ESD Ratings (Note 9)  
Characteristic  
Electrostatic Discharge - Human Body Model  
Electrostatic Discharge - Machine Model  
Symbol  
ESD HBM  
ESD MM  
Value  
8,000  
400  
Unit  
V
V
JEDEC Class  
3B  
C
Notes:  
6. For a device mounted with the collector lead on 52mm x 52mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air  
conditions whilst operating in steady-state.  
7. Same as Note 6, except the device is mounted on 25mm x 25mm 1oz copper.  
8. Thermal resistance from junction to solder-point (at the end of the collector lead).  
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.  
2 of 7  
www.diodes.com  
March 2017  
© Diodes Incorporated  
FZT857  
Document Number DS33177 Rev. 9 - 2  
FZT857  
Thermal Characteristics and Derating Information  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
52mmX52mm  
Single sided 2oz Cu  
25mmX25mm  
Single sided 1oz Cu  
0
20 40 60 80 100 120 140 160  
Temperature (°C)  
Derating Curve  
52mmX52mm  
Single sided 2oz Cu  
Single Pulse Tamb=25°C  
40  
30  
20  
10  
0
100  
10  
1
52mmX52mm  
Single sided 2oz Cu  
D=0.5  
Single Pulse  
D=0.2  
D=0.05  
D=0.1  
100µ 1m 10m 100m  
1
10  
100  
1k  
100µ 1m 10m 100m  
1
10  
100  
1k  
Pulse Width (s)  
Pulse Width (s)  
Transient Thermal Impedance  
Pulse Power Dissipation  
3 of 7  
www.diodes.com  
March 2017  
© Diodes Incorporated  
FZT857  
Document Number DS33177 Rev. 9 - 2  
FZT857  
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
BVCBO  
BVCER  
BVCEO  
BVEBO  
Min  
350  
350  
300  
7
Typ  
475  
475  
350  
8
Max  
Unit  
V
Test Condition  
IC = 100µA  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Collector-Emitter Breakdown Voltage (Note 10)  
Emitter-Base Breakdown Voltage  
V
IC = 1µA, RB ≤ 1kΩ  
IC = 1mA  
V
V
IE = 100µA  
<1  
  
50  
1
nA  
µA  
VCB = 300V  
Collector Cut-Off Current  
ICBO  
VCB = 300V, TA = +100°C  
VCE = 300V, RB ≤ 1kΩ  
VCE = 300V, TA = +100°C  
VEB = 6V  
<1  
  
<1  
200  
200  
25  
50  
1
nA  
µA  
Collector Cut-Off Current  
Emitter Cut-Off Current  
ICER  
IEBO  
100  
100  
15  
10  
nA  
IC = 10mA, VCE = 5V  
IC = 500mA, VCE = 10V  
IC = 2A, VCE = 10V  
IC = 3A, VCE = 10V  
IC = 500mA, IB = 50mA  
IC = 1A, IB = 100mA  
IC = 2A, IB = 200mA  
IC = 3.5A, IB = 600mA  
IC = 3.5A, IB = 600mA  
IC = 3.5A, VCE = 10V  
300  
DC Current Gain (Note 10)  
hFE  
15  
59  
100  
155  
230  
345  
1,250  
1,120  
95  
Collector-Emitter Saturation Voltage (Note 10)  
mV  
VCE(SAT)  
180  
300  
1,020  
940  
Base-Emitter Saturation Voltage (Note 10)  
Base-Emitter Turn-On Voltage (Note 10)  
mV  
mV  
VBE(SAT)  
VBE(ON)  
IC = 100mA, VCE = 10V,  
f = 50MHz  
Current Gain-Bandwidth Product (Note 10)  
Output Capacitance  
80  
MHz  
pF  
fT  
21  
100  
COBO  
tON  
VCB = 20V, f = 1MHz  
IC = 250mA, VCC = 50V,  
IB1 = -IB2 = 25mA  
Switching Times  
ns  
5,300  
tOFF  
Note:  
10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.  
4 of 7  
www.diodes.com  
March 2017  
© Diodes Incorporated  
FZT857  
Document Number DS33177 Rev. 9 - 2  
FZT857  
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)  
1
VCE=10V  
IC/IB=10  
250  
200  
150  
100  
50  
150°C  
100°C  
25°C  
150°C  
100°C  
25°C  
0.1  
-55°C  
-55°C  
0.01  
0
1m  
1m  
10m  
100m  
1
10m  
100m  
1
IC Collector Current (A)  
IC Collector Current (A)  
VCE(sat) v IC  
hFE v IC  
1.0  
0.8  
0.6  
0.4  
0.2  
1.0  
0.8  
0.6  
0.4  
0.2  
-55°C  
25°C  
-55°C  
25°C  
100°C  
100°C  
IC/IB=10  
VCE=10V  
150°C  
10m  
150°C  
10m  
1m  
100m  
1
1m  
100m  
1
IC Collector Current (A)  
IC Collector Current (A)  
VBE(sat) v IC  
VBE(on) v IC  
1.5  
1.0  
0.5  
0.0  
f = 1MHz  
IC/IB=10  
IC/IB=20  
1000  
100  
10  
Cibo  
IC/IB=50  
IC/IB=5  
Cobo  
T = 25°C  
4 5  
10m  
100m  
1
10  
100  
0
1
2
3
Voltage(V)  
IC Collector Current (A)  
VCE(sat) v Gain  
Capacitance v Voltage  
5 of 7  
www.diodes.com  
March 2017  
© Diodes Incorporated  
FZT857  
Document Number DS33177 Rev. 9 - 2  
FZT857  
Package Outline Dimensions  
Please see http://www.diodes.com/package-outlines.html for the latest version.  
SOT223  
D
Q
b1  
C
SOT223  
Min Max Typ  
1.55 1.65 1.60  
Dim  
A
A1 0.010 0.15 0.05  
E
E1  
b
b1  
C
0.60 0.80 0.70  
2.90 3.10 3.00  
0.20 0.30 0.25  
6.45 6.55 6.50  
3.45 3.55 3.50  
6.90 7.10 7.00  
Gauge  
Plane  
0.25  
D
Seating  
Plane  
E
E1  
e
e1  
L
Q
L
e1  
b
-
-
-
-
4.60  
2.30  
e
0.85 1.05 0.95  
0.84 0.94 0.89  
A
A1  
7°  
All Dimensions in mm  
Suggested Pad Layout  
Please see http://www.diodes.com/package-outlines.html for the latest version.  
SOT223  
X1  
Y1  
C1 Y2  
Y
Dimensions Value (in mm)  
C
C1  
X
2.30  
6.40  
1.20  
3.30  
1.60  
1.60  
8.00  
X1  
Y
Y1  
Y2  
C
X
Note:  
For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between  
device terminals and PCB tracking.  
6 of 7  
www.diodes.com  
March 2017  
© Diodes Incorporated  
FZT857  
Document Number DS33177 Rev. 9 - 2  
FZT857  
IMPORTANT NOTICE  
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume  
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  
website, harmless against all damages.  
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings  
noted herein may also be covered by one or more United States, international or foreign trademarks.  
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the  
final and determinative format released by Diodes Incorporated.  
LIFE SUPPORT  
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  
A. Life support devices or systems are devices or systems which:  
1. are intended to implant into the body, or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  
labeling can be reasonably expected to result in significant injury to the user.  
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  
failure of the life support device or to affect its safety or effectiveness.  
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its  
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  
Copyright © 2017, Diodes Incorporated  
www.diodes.com  
7 of 7  
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March 2017  
© Diodes Incorporated  
FZT857  
Document Number DS33177 Rev. 9 - 2  
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