IXGX 40N60BD1
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
PLUS247 Outline
IC = I ; V = 10 V,
30
42
S
Pulse Cte90st, CtE≤ 300 µs, duty cycle ≤ 2 %
Cies
Coes
Cres
3300
370
65
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Qg
Qge
Qgc
116
23
65
nC
nC
nC
Terminals: 1 - Gate
2 - Drain (Collector)
3-Source(Emitter)
4 - Drain (Collector)
td(on)
tri
td(off)
tfi
25
30
ns
ns
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
180 300 ns
180 270 ns
VCE = 0.8 VCES, RG = Roff = 4.7 Ω
A
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
A
A12
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
,
b
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
Eoff
2.7 6.0 mJ
b
b12
td(on)
tri
Eon
td(off)
tfi
25
30
1.2
300
270
ns
ns
mJ
ns
ns
C
D
E
0.61
0.80
20.80 21.34
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
15.75 16.13
e
5.45 BSC
.215 BSC
L
19.81 20.32
.780 .800
VCE = 0.8 VCES, RG = Roff = 4.7 Ω
L1
3.81
4.32
.150 .170
Remarks: Switching times may
Q
5.59
6.20
.220 0.244
.170 .190
increase for VCE (Clamp) > 0.8 • VCES
,
R
4.32
4.83
higher TJ or increased RG
Eoff
4.0
mJ
RthJC
RthCK
0.50 K/W
K/W
0.15
ReverseDiode(FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
VF
TestConditions
min. typ. max.
IF = I , V = 0 V,
TJ = 150°C
1.3
1.8
V
V
PulsCe90tesGt,Et ≤ 300 ms, duty cycle d 22 %
IRM
IF = I , VGE = 0 V, -diF/dt = 100 A/µs,
7.5
A
VR =C1900 0 V
trr
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V
35
ns
0.65 K/W
RthJC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
